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Novel ultraviolet photodetector with ultrahigh photosensitivity employing SILAR-deposited ZnS film on MgZnO
摘要： A novel MgZnO/ZnS heterojunction-based ultraviolet (UV) photodetector (PD) with high performance is fabricated by a facile sol-gel process and a successive ionic layer adsorption and reaction (SILAR) method. ZnS is coated onto the MgZnO film as an interface modification layer, which overcomes the drawbacks of the pristine MgZnO photosensitive layer, such as lower carrier mobility and more traps in the material, and greatly enhances UV-light absorption. The type-II heterostructure constructed by work function differences near the interface facilitate the separation of photogenerated carriers. Compared with the MgZnO PD, the optimized heterojunction PD (MgZnO/ZnS-10) yields a dramatically decreased dark current (z1 nA), a remarkable responsivity (900 A/W) and an ultrahigh photo-to-dark current ratio (up to 2.3 (cid:1) 105) under 325 nm light illumination at 5 V bias. These results provide a cost-efficient means for improving the properties of MgZnO PDs, and show the advantages of MgZnO/ZnS heterojunction PDs in UV detection. This study demonstrates that rational construction of novel heterojunctions holds great potential for fabricating high-performance photodetectors.
关键词： Type-II heterostructure,MgZnO,Ultraviolet (UV) photodetector (PD),ZnS
更新于2025-09-23 15:19:57
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Performance analysis of p-LPZO/n-GZO and p-SZO/n-GZO homojunction UV photodetectors
摘要： A comprehensive analytical model for the dark current and photoresponsivity of ZnO thin film based homojunction ultraviolet (UV) photodetector (PD) is proposed in this study. The detailed insight about the effects of different acceptor doping materials in the illuminated surface layer is presented in this work. The recombination velocity of the carriers and the effect of applied reverse bias, specifically on the responsivity of p-n homojunction based UV PD are elucidated. The impact of two different types of dual ion beam sputtering (DIBS)-grown acceptor-doped ZnO (Sb:ZnO and Li-P:ZnO) materials on the responsivity is also discussed. The investigation results reveal that an increase in applied reverse bias results in higher responsivity due to depletion region increase leading to higher charge carrier photogeneration. Further, on comparing the results with the experimentally reported ZnO-based homojunction UV PDs, it is found that, by incorporating Sb:ZnO as p-type layer, dark current and responsivity values are improved by ~38 and ~63.7%, respectively. Hence, the developed model is significant for the design optimization of high-performance ZnO thin film-based UV homojunction PDs.
关键词： Dual ion beam sputtering (DIBS),Responsivity,Photodetector (PD),Ultraviolet (UV)
更新于2025-09-23 15:19:57
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All-Si Large-Area Photodetectors With Bandwidth of More Than 10 GHz
摘要： We report high-speed large-area silicon photodetectors (PDs) that were fabricated on silicon-on-insulator (SOI) substrates. These coplanar interdigital PDs were fabricated with finger spacing in the 0.5–5 μm range. One of the detectors, which had an area of 2300 μm2, achieved a bandwidth as high as 14.1 GHz under a bias voltage of ?10 V at a wavelength of 850 nm. Meanwhile, the device with the maximum area of 4300 μm2 also achieved a 7.9-GHz bandwidth, suggesting our detectors are highly suitable for high-speed 850-nm optical receiver for large area receiving applications. We established a new transition time and resistor–capacitor (RC) equivalent circuit model to analyze and calculate the 3-dB frequency of the coplanar interdigital PD; the model results were well-matched with the measurement results.
关键词： photodetector (PD),High-speed,silicon,large area
更新于2025-09-11 14:15:04