研究目的
Investigating the performance of ZnO thin film based homojunction ultraviolet (UV) photodetectors with different acceptor doping materials.
研究成果
The developed analytical model provides a comprehensive understanding of the performance of ZnO thin film based homojunction UV photodetectors, highlighting the significant impact of acceptor doping materials and operational conditions on device performance. The model is validated with experimental data, showing improved performance with Sb:ZnO as the p-type layer. This work contributes to the design optimization of high-performance UV photodetectors.
研究不足
The study is limited to the analysis of ZnO-based homojunction UV photodetectors and does not explore heterojunction devices. The model's validation is based on a limited set of experimental data, which may not cover all possible operational conditions.
1：Experimental Design and Method Selection:
The study involves the development of an analytical model for the dark current and photoresponsivity of ZnO thin film based homojunction UV photodetectors. The model considers the effects of different acceptor doping materials, recombination velocity of carriers, and applied reverse bias on the device performance.
2：Sample Selection and Data Sources:
The study uses DIBS-grown acceptor-doped ZnO (Sb:ZnO and Li-P:ZnO) and donor-doped ZnO (GZO) materials. The thickness of the layers is fixed at 250 nm based on prior research indicating optimal properties at this thickness.
3：List of Experimental Equipment and Materials:
Dual ion beam sputtering (DIBS) system for material deposition.
4：Experimental Procedures and Operational Workflow:
The analytical model is developed and validated with experimental results from the literature. The performance of the photodetectors is analyzed under varying conditions of reverse bias and surface recombination velocity.
5：Data Analysis Methods:
The model's predictions are compared with experimental data to validate its accuracy and applicability.
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