研究目的
Investigating the high responsivity and fast UV-Vis-SWIR photodetector based on Cd3As2/MoS2 heterojunction.
研究成果
The Cd3As2/MoS2 heterojunction photodetector demonstrates high responsivity and fast response time across a broad spectrum from UV to SWIR. This composite structure of Dirac semimetal materials and two-dimensional materials provides a potential solution for high-performance photodetector and broadband imaging.
研究不足
The photodetector's performance is limited by the weak built-in electric field at the Cd3As2/MoS2 interface, which affects the quantum efficiency. The small fraction of the light source contributes to the photocurrent, indicating potential areas for optimization in light absorption and carrier collection efficiency.
1：Experimental Design and Method Selection:
The Cd3As2/MoS2 heterojunction photodetector was fabricated using a simple, low-cost transferring method. The photoresponse current was measured by the Keithley 2636B source meter system.
2：Sample Selection and Data Sources:
Cd3As2 single crystals nanoplates were synthesized by the Cd3As2 powers in the tube furnace. Layered MoS2 crystal was purchased from Nanjing MuKe Nanotechnology Co., Ltd.
3：List of Experimental Equipment and Materials:
Optical microscope (MV5000, Jiangnan Novel Optics Co. Ltd.), Keithley 2636B source meter system (Tektronix Inc.), 3-axis translation stage, electron beam lithography(EBL) and sputtering for fabricating the electrodes.
4：Experimental Procedures and Operational Workflow:
The Cd3As2 nanoplate was transferred onto the Si/SiO2 substrate. Then the MoS2 was exfoliated and transferred on the flexible PDMS. Finally, the MoS2 was transferred onto the Cd3As2 nanoplates with the help of a 3-axis translation stage.
5：Data Analysis Methods:
The photocurrent and responsivity were analyzed with the equation: Iph=Ilight-Idark and Ri=Iph/P, where P is the illumination power on the sensitive area.
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