- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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[IEEE 2018 48th European Microwave Conference (EuMC) - Madrid, Spain (2018.9.23-2018.9.27)] 2018 48th European Microwave Conference (EuMC) - Low-loss Loaded Line Phase Shifter for Radar Application in X Band
摘要： Losses in the phase shifters of phased arrays are one of the main limitations of these reconfigurable antennas. This contribution presents the design and measured results of variable phase shifters on triplicate suspended transmission lines in the microwave X-band for variable pointing radar applications. The antenna assembly remains passive and with a very low level of losses in the power distribution network and the phase shifters. PIN or varactor diodes are used to control the load on the transmission line. Each of these components has advantages and disadvantages that are discussed in the communication.
关键词： linear array,phase shifter,Pin diode,varactor,suspended strip
更新于2025-09-23 15:23:52
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Polarization Reconfigurable Corner Truncated Square Microstrip Array Antenna
摘要： In this paper, a simple 2 × 2 polarization reconfigurable planar microstrip array antenna is presented. It is based on electrical switching technology using PIN diodes. Each element of the array is excited with the aid of the corporate feed technique. Each element of the proposed structure consists of a corner truncated square patch connected to parasitic triangular conductors by means of PIN diodes. The array element is configured to facilitate linear polarization (LP), right-hand circular polarization (RHCP) or left-hand circular polarization (LHCP) by means of 4 independently biased PIN diodes. The proposed antenna is designed and simulated using electromagnetic simulation software CST Microwave Studio. In order to experimentally validate the design, a prototype is fabricated on a 1.6 mm thick RT Duroid substrate of relative permittivity εr = 2.2. The performance of the antenna is validated experimentally using 16 PIN diodes. The simulation and measured results for all the polarization states of the array antenna are found to be in good agreement. The measured results have established the polarization reconfigurable ability of the antenna for 5.7–6.0 GHz operating band. The proposed antenna is suitable for C-band point-to-point communication applications.
关键词： PIN diode switch,polarization reconfigurable,corporate feed network,reconfigurable antenna,Array antenna,circular polarization
更新于2025-09-23 15:23:52
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A 600V PiN diode with partial recessed anode and double-side Schottky engineering for fast reverse recovery
摘要： In this paper, a novel 600V PiN diode for fast recovery is proposed and the operation mechanism as well as the high dynamic ruggedness of the device are analyzed in detail. The proposed structure features the alternating P/N region with partial recessed P region at anode side and the P- Schottky as well as the N Schottky contacts at both sides. In on-state, the carrier injection efficiency can be modulated by adjusting the work function of the anode P- Schottky contact (WSA), which is based on MSC (Metal-Semiconductor-Contacts) concept. As a result, the fast recovery is realized due to the reduced amount of the stored carriers and the shortened carrier extraction path. In off-state, the leakage current can be effectively suppressed attributed to the rapid pinch-off of the depletion layer. The forward voltage drop (VF) and the reverse recovery time (trr) of the proposed structure can be adjusted by changing the depth of the P- Schottky contact (tra) on the sidewall, without sacrificing the breakdown voltage (BV). The proposed structure achieves a trr of 75ns which is 45.7% and 33% lower than that of the conventional PiN and the MPS structure at the same VF of 0.965V, respectively. Moreover, the total amount of holes in the N buffer layer can be supplemented by adjusting the work function of the cathode N Schottky contact (WSC) during reverse recovery, resulting in a high-dynamic ruggedness with suppressed voltage oscillation and voltage overshoot.
关键词： Schottky contact,leakage current,dynamic characteristics,PiN diode,voltage overshoot,reverse recovery
更新于2025-09-23 15:23:52
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[IEEE 2018 China International SAR Symposium (CISS) - Shanghai, China (2018.10.10-2018.10.12)] 2018 China International SAR Symposium (CISS) - Dynamic Metasurface for Synthetic Apeture Radar Imaging
摘要： In this paper, a PIN dioded loaded programmable metasurface element and dynamic apeture has been proposed. The programmable element-a complementary electric LC (cELC) resonator is patterned into the microstrip transmission line. Two PIN diodes are integrated across the capacitive gap of the cELC element, The digital states of each coding element can be controlled in real time by changing the states of PIN diodes . The proposed dynamic aperture has potential applications in dynamic beamforming, electromagnetic imaging, and security check.
关键词： PIN diode,cELC,dynamic aperture
更新于2025-09-23 15:23:52
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Electron sources based on diamond pin-diodes
摘要： Efficient electron sources are of ongoing interest in particular for space and terrestrial power telecommunications and radar applications. With conventional cathode technology based on thermionic- and field electron emission a novel approach for direct electron emission is realized through a diamond pin diode. Electrons injected into the conduction band of the intrinsic layer of the diode can be released into vacuum with a negative electron affinity surface of the i-layer. The diamond pin diodes were prepared on boron doped (p-type) substrates with (111) surface orientation. A high purity intrinsic and a phosphorus doped diamond layer (n-type, ~400nm thickness) were deposited in dedicated PECVD systems, respectively. An additional contact layer comprised of nanostructured carbon was grown in a dedicated PECVD. The layered device was processed by lithography utilizing an aluminum hard mask to etch mesa structures with diameters ranging from 50μm to 200μm. The final devices were treated in a pure hydrogen plasma to induce the negative electron affinity properties of the i-layer. After an annealing step in high vacuum individual pin diodes were biased in forward current and voltages up to 20V. The observation of light from the diode was attributed to the UV exciton state and indicated bipolar transport. At a diode current of about 80mA an electron emission current of 25μA was observed from a single 200μm diameter diode.
关键词： Diamond,solid state electronics,doping,phosphorus,electron emission,plasma-enhanced chemical vapor deposition,nanostructured carbon,pin diode,single crystal
更新于2025-09-23 15:21:21
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Coplanar waveguidea??based ultraa??wide band antenna with switchable filtering of WiMAX 3.5a??GHz and WLAN 5a??GHz signals
摘要： This paper presents a compact single-layer UWB antenna based on a coplanar waveguide structure. The antenna operates within bandwidth from 3 to 10.6 GHz (111.76%). The antenna incorporates two notch-filters, designed to mitigate possible interference with WiMAX and WLAN. This filtering function can be switched on or off, independently for each band, by using pin diodes. This feature allows fast adaptation, supporting spectrum sharing solutions with a compact and planar antenna. The simulated and measured results of the proposed antenna are in good agreement, with the maximum antenna gains dropping after activation of the filtering from 2.5 to ?10 dBi in WiMAX 3.5 GHz band and from 3 to ?8 dBi in WLAN 5 GHz band.
关键词： CPW-feed,notch band,UWB monopole antenna,reconfiguration,PIN diode
更新于2025-09-23 15:19:57
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Nano-scale multifunctional logic gate based on graphene/hexagonal boron nitride plasmonic waveguides
摘要： A new probe-fed patch antenna with polarization recon?guration is presented in this paper. The antenna is composed of a circular radiating patch and a switchable feed network. By controlling the operating states of four pairs of PIN diodes in the feed network, the feed point of the circular patch can be switched. Therefore, a recon?guration between four linear polarization directions at a 45? interval (22.5?, 67.5?, 112.5?, and 157.5?) can be realized. All the different polarization states own similar matching and radiation characteristics. Simulated and measured results indicate that the antenna can achieve recon?gurable quadri-polarization diversity features with an invariable operating frequency and excellent radiation performance, which are very attractive for wireless communications. In addition, the proposed design can offer more recon?gurable linear polarization directions by adding more switchable paths in the feed network.
关键词： patch antenna,Recon?gurable antenna,PIN diode
更新于2025-09-19 17:13:59
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[IEEE 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Berlin, Germany (2019.6.23-2019.6.27)] 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Bionanoscaffolds-Enabled Non-Wetting Surfaces for Antibiofouling Applications
摘要： A new probe-fed patch antenna with polarization recon?guration is presented in this paper. The antenna is composed of a circular radiating patch and a switchable feed network. By controlling the operating states of four pairs of PIN diodes in the feed network, the feed point of the circular patch can be switched. Therefore, a recon?guration between four linear polarization directions at a 45? interval (22.5?, 67.5?, 112.5?, and 157.5?) can be realized. All the different polarization states own similar matching and radiation characteristics. Simulated and measured results indicate that the antenna can achieve recon?gurable quadri-polarization diversity features with an invariable operating frequency and excellent radiation performance, which are very attractive for wireless communications. In addition, the proposed design can offer more recon?gurable linear polarization directions by adding more switchable paths in the feed network.
关键词： patch antenna,Recon?gurable antenna,PIN diode
更新于2025-09-19 17:13:59
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Center frequency and bandwidth switchable substrate integrated waveguide filters
摘要： This paper presents center frequency and bandwidth switchable substrate integrated waveguide filters loaded with PIN diodes. The diodes are added in the slot on the surface of the resonators to switch the resonant frequencies and the coupling coefficients. Although the introduction of the slot causes extra radiation loss, it is small and acceptable. The proposed center frequency switchable filter has four center frequency switchable states of 1.78, 1.82, 1.88, and 1.91 GHz, while the bandwidth only changes ±0.64%. The bandwidth switchable filter has two states with 3 dB bandwidths of 70 and 103 MHz at a center frequency of 2.08/2.09 GHz. The measured performance of the fabricated filters shows good agreement with the simulation.
关键词： PIN diode,substrate integrated waveguide,switchable
更新于2025-09-19 17:13:59
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[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Cooled Silicon-On-Insulator Diode Thermometer: Toward THz Passive Imaging
摘要： Terahertz passive imaging requires high sensitivity detectors, with Minimum Detectable Power (MDP) under the picowatt range. An antenna-coupled cooled microbolometer, incorporating a lateral PiN-like diode as thermometer, could represent a solution. In a first step, such diode performances have to be investigated, especially the temperature coefficient of current (TCC) and the low frequency noise. Prototypes were fabricated on Silicon-On-Insulator (SOI) 4” wafers with 50-nm active silicon layer. I-V and noise measurements down to 81K were useful to derive the electrical MDP of the future bolometer, already reaching 6.6 pW at 10 frames per second.
关键词： low frequency noise,microbolometer,Minimum Detectable Power,PiN diode,temperature coefficient of current,Silicon-On-Insulator,Terahertz passive imaging
更新于2025-09-12 10:27:22