研究目的
Investigating the performance of a lateral PiN-like diode as a thermometer in a cooled THz microbolometer for passive imaging applications, focusing on the temperature coefficient of current (TCC) and low frequency noise.
研究成果
The study demonstrated the high thermal response of lateral SOI diodes at 80 K, with a low noise level, resulting in a Minimum Detectable Power (MDP) in the pW range. Future work could focus on reducing noise by lowering contact resistances and optimizing thermal insulation at 80 K.
研究不足
High series resistance of the annealed diode and the resolution limit of the noise measurement chain at very low bias currents may mask the actual noise level of the device. Further optimization of contact resistances and thermal insulation at 80 K is needed.
1：Experimental Design and Method Selection:
The study involves the design and fabrication of lateral PiN diodes on Silicon-On-Insulator (SOI) wafers for use as thermometers in cooled THz microbolometers. Silvaco 2D Technology Computer-Aided Design (TCAD) simulations were used for diode design.
2：Sample Selection and Data Sources:
Prototypes were fabricated on SOI 4” wafers with a 50-nm active silicon layer. I-V and noise measurements were conducted from 81K up to 343K.
3：3K.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes an HP 4156 Parameter Analyzer, Keithley C6430 source measure unit, and an Agilent 35670A Dynamic Signal Analyzer. Materials include SOI wafers, Boron and Phosphorus dopants, and Platinum silicide (PtSi) for ohmic contacts.
4：Experimental Procedures and Operational Workflow:
The process involved ion implantation, Rapid Thermal Annealing, and Atomic Layer Deposition for passivation. Electrical measurements were conducted in dark conditions at various temperatures.
5：Data Analysis Methods:
The temperature coefficient of current (TCC) and low frequency noise were analyzed to derive the electrical Minimum Detectable Power (MDP) of the bolometer.
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