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Effect of post-annealing on microstructure and piezoelectric properties of ZnO thin film for triangular shaped vibration energy harvester
摘要： In this paper, a triangular shaped piezoelectric vibration energy harvester (TS-PVEH) with zinc oxide (ZnO) thin films as the piezoelectric layer is reported. The effect of post-annealing temperature on the microstructure and piezoelectric performance of ZnO thin film deposited by magnetron sputtering method is investigated firstly. The results show that the optimum post-annealing temperature of 150 °C was the most beneficial to improve the piezoelectric properties of ZnO thin films. Four prototypes of TS-PVEH with different structure parameters are fabricated and optimized. The simulation and experiment results indicate that the height and width of the triangular structure have a significant influence on the vibration mode and the output performance of TS-PVEHs. The optimization results indicate that the third prototype has the best output performance. Its open-circuit voltage and short-circuit current are 290mV and 1.25 μA, respectively, when the vibration acceleration is 5m/s2 and the frequency is 56Hz. Moreover, it has the highest load power density of 0.035μW/cm2 when the load is 0.1MΩ.
关键词： Triangular substrate,ZnO thin film,Structure optimization,Post-annealing temperature,Vibration energy harvester
更新于2025-09-23 15:23:52
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Impact of post annealing and hydrogen implantation on functional properties of Cu2O thin films for photovoltaic applications
摘要： Polycrystalline cuprous oxide (Cu2O) thin films were sputtered, annealed (900 ?C rapid thermal annealing) and subsequently implanted with various hydrogen ion (H+) doses from 5E13 to 2E15 cm-2 with a low acceleration energy of 36 keV at room temperature to tailor the functional properties of the thin films for solar cell application. The annealed and H+ implanted Cu2O thin films were post annealed at low temperatures from 100 ?C to 600 ?C in an inert atmosphere to promote hydrogen passivation of prevalent intrinsic acceptors and tune the carrier concentration for optimum performance as an absorption layer in a heterojunction solar cell. The H+ incorporation and post annealing tuned the structural, optical and electrical properties of annealed polycrystalline Cu2O thin films. The results show an enhancement of the excitonic feature around ~2.0 eV with H+ dose. The normalized photoluminescence (PL) area around ~1.7 eV was drastically enhanced with increasing H+ doses compared to excitonic and copper vacancy related area. The normalized total PL quantum efficiency shows an enhancement in yield with elevated H+ doses by two orders of magnitude. The hole concentration decreases down to ~1013 cm-3, while hole mobility and resistivity increase to ~27 cm2/Vs and ~2.4 k?cm, respectively, as the H+ implantation goes from lower to higher doses. In addition, the post annealing and H+ incorporation lead to a change in the energy level of the major acceptor from 0.21 eV to 0.27 eV above the valence band maximum. By following the qualitative (PL analysis) and quantitative (Hall data) outcomes, we can conclude that H+ implantation and post annealing likely indicates the passivation of both acceptor defects and compensating donor defects.
关键词： Post annealing temperature,H+ doses,Thin films,Hall effect,Cu2O,Photoluminescence
更新于2025-09-16 10:30:52