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Impact of high resistivity transparent (HRT) layer in cadmium telluride solar cells from numerical simulation
摘要： In this study, Solar Cell Capacitance Simulator (SCAPS-1D) is utilized to examine the properties of cadmium telluride (CdTe) based solar cell. The key aim of this study is to explore the prospects of enhancing the ef?ciency of CdTe solar cells by adding a high resistivity transparent (HRT) layer to the conventional cell structure. For that purpose, novel HRT layer structures are suggested in CdTe solar cells between a cadmium sul?de (CdS) window layer and transparent conductive oxide (TCO) layer. Simulation results presented in this paper are from four proposed structures with three different HRT materials compared to the conventional design. The optimal parameters that offer the optimum functionality of the conventional design (SnO2/CdS/CdTe/MoTe2), with and without the HRT layer, are determined. Obtained results validate an enhancement in ef?ciency of the solar cell with Zn2SO4 as the HRT layer due to lower recombination loss and barrier height at the back contact region. The suggested cell with Zn2SO4 demonstrates an ef?ciency of 17.61% (Voc ? 0.92 V, Jsc ? 25.41 mA/cm2, FF ? 75.35), with only 20 nm HRT layer and 25 nm CdS as a window layer. In the meantime, the reference cell (no HRT layer) depicts an ef?ciency of 17.01% with 4000 nm thick CdTe as an absorber layer. However, the normalized ef?ciency of the suggested cells decreases linearly with increased temperature.
关键词： SCAPS-1D,solar cells,cadmium telluride,high resistivity transparent layer,numerical simulation
更新于2025-09-23 15:21:01
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Numerical analysis of CdS-CIGS interface configuration on the performances of Cu(In,Ga)Se2 solar cells
摘要： One dimension solar Cell Simulation package (SCAPS) is used to analyze the impact of the CdS-CIGS interface configuration on the performances of CIGS solar cells. We simulated the current-voltage characteristic of two models of the cell: one with a donor type defect (OVC model) and the other with acceptor type defect (P+ model) at the CdS-CIGS interface. The advantages and disadvantages of these CIGS surface configuration on the electrical parameters were discussed according to their thicknesses, defect density and carrier lifetime. The simulation results show that the model with the P+ layer has poor performance when its thickness and defect density increase, due to a huge distortion on the J-V characteristic. On the other hand, the OVC layer plays a fundamental role in the performance of CIGS solar cells. Better performances are obtained with the OVC model when the density of donor defect is in the range 1013 - 1015 cm-3, the charge carriers lifetime in the range 0.02 - 1 ns, and the thickness of the OVC layer in the range 200 - 400 nm.
关键词： P+ layer,OVC layer,SCAPS-1D,Distortion,CdS-CIGS interface
更新于2025-09-23 15:19:57
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Numerical simulation of charge transport layer free perovskite solar cell using metal work function shifted contacts
摘要： Perovskite solar cells (PSCs) are one of the fastest emerging photovoltaic (PV) technology at the research level. To achieve higher conversion efficiencies from PSCs, a perovskite absorber layer is stacked between two charge transport layers (CTLs) such as electron and hole transport layers. However, fabrication of defect-free multi-layered PSC is a challenging task, and the presence of CTL and their corresponding interfaces with perovskite enhances the recombination, hysteresis and led to poor stability. Here, in this work, CTL free (i.e., electron and hole transport layer free) PSC is simulated using metal work function shifted contacts. The device presented in this work is free from transport layers and the collection process is with the help of an electric field across the perovskite layer. The electric field is created by using two metals of different work function, i.e., 4.35eV and 5.25eV (can be realized using self-assembled monolayers technique) used as cathode and anode respectively. Simulated CTL free PSC exhibits JSC=17.8 mA.cm-2, VOC=712 mV, FF=68.5% and PCE=8.7% with 250 nm thick perovskite absorber layer having bulk defect density of 2.5x1013 cm-3. Further, a comprehensive study is done in terms of front electrode work function (FEW), front electrode transparency, perovskite thickness and bulk defect density to understand the impact of these parameters on the performance of the device. To understand the behavior of the device, the energy band diagram profile is examined. Reported results show that higher metal work function difference between front and back electrode, higher transparency, and thick perovskite layer with low defect density results in better PV effect in CTL free PSC. Optimized CTL free PSC device delivers JSC=19.9 mA.cm-2, VOC=726 mV, FF=66.8% and PCE=9.7%. The design simulated in this work opens up a new window for next-generation interface defect and hysteresis-free PSC.
关键词： simulation,absorption,SCAPS-1D.,charge transport layer,metal work function,Perovskite solar cell,transparency
更新于2025-09-19 17:13:59
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Study of effect of defects on CdS/CdTe heterojunction solar cell
摘要： SCAPS simulation software was used to simulate heterojunction solar cell having CdTe absorber layer. Investigations on the photovoltaic performance parameters has been made against variation of defect concentration and charge states. It has been observed that the concentration of absorber layer defects must be minimized to a least possible value in order to attain the enhanced photovoltaic efficiency. The charge type of the defects has also been found to play an important role in influencing the photovoltaic performance parameters of the solar cells.
关键词： heterojunction,SCAPS-1D,Thin films,CdTe,Defects,Solar cell simulation
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Analysis and Enhancement of Quantum Efficiency for Multi-Junction Solar Cell
摘要： Photovoltaics(PVs) has always been considered to be the most prominent resource for the generation of electricity without the use of fossil fuels. The dependency of humans on PVs has been remarkably less when compared to the potential possessed by the availability and abundance of the energy being received, the major obstacle being the ef?ciency of the cell. Multi-junction Solar cells have been an outstanding concept for tackling the problem of ef?ciency. In this paper, we have presented a model of ?ve layered, four-junction solar cells which concentrates on the conversion of the maximum spectrum of the light energy received by the sun. The concluding energy band diagram, current-voltage characteristics and quantum ef?ciency have been presented in this paper. The Fill Factor of the cell so developed is 43.61%, and the highest quantum ef?ciency of the cell is 76.198%. We have compared our results with the previous papers and found a signi?cant increase in the Fill Factor and Quantum Ef?ciency of the developed cell.
关键词： Photovoltaics,Solar Cell,SCAPS-1D,Quantum Ef?ciency,Multi-junction
更新于2025-09-19 17:13:59
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[IEEE 2019 TEQIP III Sponsored International Conference on Microwave Integrated Circuits, Photonics and Wireless Networks (IMICPW) - Tiruchirappalli, India (2019.5.22-2019.5.24)] 2019 TEQIP III Sponsored International Conference on Microwave Integrated Circuits, Photonics and Wireless Networks (IMICPW) - A Novel Perovskite Solar Cell with ZnO-Cu <sub/>2</sub> O as Electron Transport Material-Hole Transport Material
摘要： Perovskite solar cells have gained remarkable position among the emerging photovoltaic technologies, owing to their increased power conversion efficiency exceeding 20%. The development of various electron transport materials (ETM), perovskite absorbers, hole transport materials (HTM) have contributed well in the efficiency enhancement and stability improvement. One of the major development is the use of ZnO as ETM that replaces TiO2. ZnO has material properties similar to that of TiO2 but possesses improved electron mobility. Moreover, ZnO fabrication methods are easier and of low cost. Cuprous oxide (Cu2O), an earth abundant inorganic p-type material, is recently investigated as a best hole transport material that can replace Spiro-OMeTAD. In this paper, the performance of a planar CH3NH3PbI3 based solar cell using ZnO as ETM and Cu2O as HTM is evaluated using SCAPS 1D software. The combination of ZnO ETM and Cu2O HTM improves the charge transport and reduces the cost. The overall conversion efficiency obtained for the proposed ZnO ? Cu2O perovskite solar cell using CH3NH3PbI3 by SCAPS simulation is 22.77%. The performance of CH3NH3PbI3 based solar cells with ZnO as ETM and with various hole transport materials such as spiro-OMeTAD, CuI, CuSCN and NiO are evaluated and compared with the proposed structure using SCAPS software. The result indicates that ZnO ? Cu2O as ETM-HTM pair is a reliable configuration for CH3NH3PbI3 based solar cell.
关键词： Perovskite,Electron transport materials,Hole transport materials,SCAPS 1D software
更新于2025-09-16 10:30:52
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Numerical Analysis of Potential Buffer Layer for Cu2ZnSnS4 (CZTS) Solar Cells
摘要： In this work, CZTS solar cell with heterojunctions CdS/CZTS and ZnS/CZTS have been simulated using the Solar Cell Capacitance Simulator (SCAPS-1D). The effect of thickness and doping concentration on the performances of both structures has been investigated. It is obtained that the optimum thickness is about 30 nm and the best doping concentration is around 5E16 cm-3 and 5E17 cm-3 for CdS/CZTS and ZnS/CZTS structures respectively. By using the buffer layers optimum parameters (thickness and doping concentration), the electrical efficiency of CZTS solar cell is boosted from 12.03% to 12.38 % for CdS/CZTS structure and from 12.51% to 12.78% for ZnS/CZTS structure. The obtained results reveal some valued insights for manufacturing Cd_free CZTS solar cells.
关键词： Thin film,SCAPS-1D,Solar cell,CdS,CZTS,ZnS
更新于2025-09-16 10:30:52
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Dataset on the generation of red-kinked current-voltage curves in Cu(In,Ga)Se2 solar cells due to buffer/window interfacial defects
摘要： Red-kinked current-voltage characteristics in silver nanowire transparent electrode based Cu(In,Ga)Se2 solar cells have been reported [1e3]. The author has recently revealed that the buffer/window interfacial defects cause the generation of red-kinked current-voltage characteristics in the solar cells [1]. This article provides the dataset regarding the red-kink for Cu(In,Ga)Se2 solar cells as a function of the donor density in n-type window and CdS buffer/window interfacial defect density. The data were obtained by the simulation for Cu(In,Ga)Se2 solar cells using SCAPS-1D. The data include current density-voltage curves, ?ll factor, open-circuit voltage, short-circuit current density, and ef?ciency in the solar cells, and energy band bending in the Cu(In,Ga)Se2 layer.
关键词： Red kink,SCAPS-1D,Buffer/window interface,CIGS,Solar cells
更新于2025-09-12 10:27:22
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[IEEE 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) - Sao Paulo, Brazil (2019.8.26-2019.8.30)] 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) - High-Efficiency GaAs Solar Cell Optimization by Theoretical Simulation
摘要： Theoretical simulations of solar cell current-voltage characteristics provide important information for a better design of the device structure, such as layers thicknesses and doping levels, in order to obtain high photovoltaic conversion efficiency. The inclusion of precise material parameters is critical to obtain reliable results and detailed understanding of the simulated device operation. In this study, GaAs solar cell structures were simulated by drift-diffusion model with SCAPS-1D in order to optimize the performance under 1 sun illumination. Moreover, we used the published results of some devices as references to infer their structures, as the details are normally not completely disclosed by the authors. To do so, an optimization study was required to probe different materials, thicknesses and doping levels for the layers. With the inferred structure, it was possible to evaluate the possibility of improvements through variation of the structure parameters to achieve even higher efficiencies.
关键词： Theoretical Simulation,Optimization,GaAs Solar Cell,SCAPS-1D
更新于2025-09-12 10:27:22
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Analysis of highly efficient perovskite solar cells with inorganic hole transport material
摘要： Organo-halide perovskites in planar heterojunction architecture have shown considerable promise as efficient light harvesters in solar cells. In this paper, a numerical modeling of a planar lead based perovskite solar cell (PSC) with Cu2ZnSnS4 (CZTS) as hole transporting material (HTM) has been done using one dimensional solar cell capacitance simulator (SCAPS-1D). The effects of numerous parameters such as defect density, thickness, and doping density of the absorber layer on the device performance are investigated. The doping densities and electron affinities of electron transporting material (ETM) and HTM are also varied to optimize the PSC performance. It has been observed that a thinner absorber layer of ~ 220 nm with a defect density of 1014 cm-3 compared to the reference structure improves the device performance. When doping density of the absorber layer increases beyond 2 × 1016 cm-3, the power conversion efficiency (PCE) reduces due to enhanced recombination rate. The defect density at the absorber/ETM interface reduces the PCE as well. Considering a series resistance of 5 Ωcm2 and all the optimum parameters of absorber, ETM and HTM layers simultaneously, the overall PCE of the device increases significantly. In comparison with the reference structure, the PCE of the optimized device has been increased from 12.76% to 22.70%, and hence the optimized CZTS based PSC is highly efficient.
关键词： CH3NH3PbI3,CZTS,SCAPS-1D,absorption coefficient
更新于2025-09-12 10:27:22