- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Sputtered and selenized Sb2Se3 thin-film solar cells with open-circuit voltage exceeding 500??mV
摘要： Antimony selenide (Sb2Se3) is a potential absorber material for environment-friendly and cost-efficient photovoltaics and has achieved considerable progress in recent years. However, the severe open-circuit voltage (Voc) deficit ascribed to the interface and/or bulk defect states has become the main obstacle for further efficiency improvement. In this work, Sb2Se3 absorber layer was prepared by an effective combination reaction involving sputtered and selenized Sb precursor thin films. The self-assembled growth of Sb2Se3 thin films with large crystal grains, benign preferential orientation, and accurate chemical composition were successfully fulfilled under an appropriate thickness of Sb precursor and an optimized selenization scenario. Substrate structured Sb2Se3 thin-film solar cells, a champion device with a power-conversion efficiency of 6.84%, were fabricated. This device is comparable to state-of-the-art ones and represents the highest efficiency of sputtered Sb2Se3 solar cells. Importantly, the high Voc of 504 mV is closely related to the reduced deep level defect density for the Sb2Se3 absorber layer, the passivated interfacial defects for Sb2Se3/CdS heterojunction interface, and the additional heterojunction heat treatment-induced Cd and S inter-diffusion. This significantly improved Voc demonstrates remarkable potential to broaden its scope of applications for Sb2Se3 solar cells.
关键词： Open-circuit voltage,Selenization,Sb2Se3 solar Cell,Elemental inter-diffusion,Sputtering
更新于2025-09-23 15:21:01
-
An effective combination reaction involved with sputtered and selenized Sb precursors for efficient Sb2Se3 thin film solar cells
摘要： Sputtering followed by post annealing is extensively used for fabrication of copper indium gallium selenide (CIGS), copper zinc tin sulfide (CZTS) and copper zinc tin sulfur selenide (CZTSSe) thin film solar cells. In this work, Sb2Se3 as an emerging alternative absorber was fabricated by an effective combination reaction of annealing sputtered Sb metallic precursors under Se vapor. Self-assembled growth of Sb2Se3 thin films consist of large grains that across the whole films have been successfully fulfilled via this combination reaction. Sb2Se3 thin films with desired orientation, stoichiometric composition and high-quality Sb2Se3/CdS heterojunction could be achieved once a proper selenization scenario was employed. Further, by selecting Sb films as precursors, the thickness of interfacial MoSe2 located at the back-contact region can be well controlled, leading to a significant enhancement in fill factor (FF) of the devices. This is in good accordance with our DFT simulation results which demonstrated Se vapor would be prone to react with the Sb lattice thermodynamically and thus limiting the thickness of the MoSe2 layer. Finally, a champion Sb2Se3 thin film solar cell with power conversion efficiency of 6.15% was achieved, which represents the highest efficiency of sputtered Sb2Se3 solar cells.
关键词： DFT calculations,Sb2Se3 solar cell,Magnetron sputtering,Selenization,Combination reaction
更新于2025-09-19 17:13:59
-
Simulation of the Sb<sub>2</sub>Se<sub>3</sub> solar cell with a hole transport layer
摘要： A model of the Sb2Se3 solar cell with a hole transport layer (HTL) has been investigated by solar cell capacitance simulator (SCAPS). The influence of different HTLs on device performance has been firstly analyzed, and CuO has been found to be the best HTL. Then, Sb2Se3 thickness, CuO thickness, the doping concentration of HTLs on device performance has been firstly analyzed, and CuO has been found to be the best HTL. Then, Sb2Se3 thickness, CuO thickness, the doping concentration of CuO, the hole mobility of CuO, the defect density of Sb2Se3 layer, the defect density at the CdS/Sb2Se3 interface, and the work function of metal electrode on device performance have been systematically studied. The optimum thicknesses of Sb2Se3 and CuO are 300 nm and 20 nm, respectively. To achieve ideal performance, the doping concentration of CuO should be more than 1019cm-3, and its hole mobility should be over 1 cm2V-1s-1. The defect densities in the Sb2Se3 layer and at the CdS/Sb2Se3 interface play a critical role on device performance, both of which should be as low as 1013 cm-3 and 1014 cm-2, respectively. In addition, the work function of the metal electrode should be more than 4.8 eV to avoid formation of Schottky junction at the metal electrode interface. After optimization, a best efficiency of 23.18% can be achieved. Our simulation results provide valuable information to further improve the efficiency of Sb2Se3 solar cells in practice.
关键词： Sb2Se3 solar cell,hole transport layer,SCAPS
更新于2025-09-11 14:15:04