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Formation of silver films for advanced electrical properties by using aerosol deposition process
摘要： A simple room temperature aerosol deposition (AD) process was used to fabricate silver thick films for high efficiency metallization that can be applied to decrease the resistance–capacitance delay and increase the signal propagation speed in integrated circuits. To obtain more advanced performance than aerosol-deposited silver films reported in previous studies, experimental parameters (orifice size of nozzle and gas consumption) that could directly affect electrical resistivity were optimized in advance. The proper small orifice size was selected for facilitated reduction of electrical resistivity by activating the percolation effect and making more conduction channels. High gas consumption also reduced the electrical resistivity of the silver films, forming plenty of metal clusters. Using experimental parameters that showed the lowest resistivity, silver thick films were fabricated via the AD process and their properties were analyzed. The results of the X-ray diffraction confirmed that the silver particles underwent impact-induced plastic deformation. As the film thickness was thickened up to 12 scans, the collided particles filled up the rough alumina substrate. After 12 scans, the silver films became densified due to severe plastic deformation of the as-deposited silver particles. Therefore, the growth mechanism suggests that most silver particles in the initial deposition step contribute to mechanical interlocking, and the subsequent particles could lead to film densification.
关键词： aerosol deposition,electrical resistivity,silver films,metallization,integrated circuits
更新于2025-09-04 15:30:14
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Facile and Efficient Welding of Silver Nanowires Based on UVA‐Induced Nanoscale Photothermal Process for Roll‐to‐Roll Manufacturing of High‐Performance Transparent Conducting Films
摘要： The continuous, large-area solution-processed production of silver nanowire (AgNW) transparent conducting films with outstanding optoelectronic and mechanical performance remains a challenge. Here, efficient welding of AgNWs is demonstrated using ultraviolet A (UVA) with the specific wavelength range from ≈320 to ≈400 nm based on a nanoscale photothermal process. The AgNW welding shows a self-terminating and self-limiting nature, and sensitivity to diameter of AgNWs. Sheet resistance of the UVA-illuminated (UVAI) AgNW films rapidly drops within 2 min without loss of transmittance. For the UVAI AgNW (30 nm in diameter) film, decrement of sheet resistance approaches three orders of magnitude (≈105–102 Ohm sq?1) with original transmittance being (97%) retained, which significantly enhances its optoelectronic properties. Enhanced mechanical flexibility, electromagnetic interference (EMI) shielding effectiveness (SE), and heating performance are obtained in the UVAI AgNW films. The SE and plateau temperature of the AgNW film increase to 25 dB and 50 °C after illumination, respectively. Smart window, transparent heater, and triboelectric nanogenerator based on the UVAI AgNW film demonstrate its versatile applications in optoelectronics. Finally, the welding method is easily integrated into a roll-to-roll process to manufacture AgNW film with a low sheet resistance of 25 Ohm sq?1 and a high transmittance of 90%, and excellent flexibility.
关键词： transparent conducting films,roll-to-roll process,nanoscale photothermal process,welding,silver nanowires
更新于2025-09-04 15:30:14
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Hybridization of an unoccupied molecular orbital with an image potential state at a lead phthalocyanine/graphite interface
摘要： The interaction of a molecular orbital with a surface state is important to understand the spatial distribution of the wave function at the molecule/substrate interface. In this study, we focus on hybridization of an unoccupied state of lead phthalocyanine (PbPc) with the image potential state (IPS) on a graphite surface. The hybridization modifies the energy-momentum dispersions of the IPS on PbPc films as observed by angle-resolved two-photon photoemission. On the PbPc 1 monolayer film, the IPS band forms a band gap and back-folding appears at the first Brillouin zone boundary due to the periodic potential by the adsorbate lattice. The modification of the dispersion is accompanied by the intensity enhancement of the IPS. We attributed the origin of the modified dispersion and intensity enhancement to a hybridization of the IPS with a molecule-derived unoccupied level. From the photon energy-dependent measurement on multilayer films, we have found the diffuse unoccupied molecular level in the vicinity of the IPS. The tail part of the IPS wave function in the substrate is enhanced by the hybridization with the unoccupied state, and thus strengthens the transition from the occupied substrate band to the hybridized IPS.
关键词： organic ultrathin films,image potential states,two-photon photoemission spectroscopy,unoccupied states,hybridization
更新于2025-09-04 15:30:14
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Electrochemical Assembling of Functionalized PEDOT Thin Films with Excellent Electroactivity and Superhydrophobicity
摘要： We synthesized dodecyloxymethyl functionalized EDOT monomers and fabricated homogeneous thin films via cycle voltammetry electrochemical deposition method on platinum and ITO substrates. The PEDOT-C12 thin films showed good electrochemical activity. Meanwhile, by increasing the cyclic voltage-scan number during electrochemical deposition process, the surface roughness was also enhanced. The large surface roughness and occurrence of micro-nano surface morphologies would lead to higher water contact angles for the PEDOT-C12 thin films. The water contact angle for the PEDOT-C12 thin films with 10 deposition cyclic voltage-scans was 160o and showed superhydrophobicity. The achieved superhydrophobic PEDOT-C12 thin films would have potential applications in corrosion protecting for metal electrodes in aqueous environment.
关键词： electrochemical deposition,PEDOT,superhydrophobicity,electroactivity,thin films
更新于2025-09-04 15:30:14
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Room-temperature RF magnetron sputtering deposition of hydrogenated Ga-doped ZnO thin films on PET substrates for PDLC devices
摘要： In this work, hydrogenated gallium-doped zinc oxide (HGZO) thin films were deposited on polyethylene terephthalate substrates at room temperature by RF magnetron sputtering. The effects of RF power and Ar + H2 flow rate on electrical and optical properties of HGZO thin films were investigated systematically. All of HGZO thin films exhibited a high average transmittance of about 77.3–82.9% in the visible range, and the minimum resistivity value reached 7.1 × 10?4 ?·cm. Potential application of polymer-dispersed liquid crystal device based on HGZO thin film was also successfully demonstrated.
关键词： RF magnetron sputtering,HGZO thin films,PDLC devices,PET substrates
更新于2025-09-04 15:30:14
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Nano-domain nucleation in front of moving domain wall during tip-induced polarization reversal in ion-sliced LiNbO<sub>3</sub> thin films
摘要： We study the domain formation during tip-induced polarization reversal in ion-sliced single crystal LiNbO3 thin films by a piezoresponse force microscope. Usually only one central domain would be formed under the conductive tip when voltage pulses are applied to it. However, in ion-sliced LiNbO3 thin films, a ring of nano-domains was observed in front of the central domain wall during domain expansion, which are subsequently absorbed into the central domain and result in a rough domain profile. This unique formation process can be attributed to local maximum of electric field beyond the wall and polarization pinning at the interface, which is experimentally confirmed by erasing the switched domain back with lower biases and finding these nano-domains were difficult to remove.
关键词： LiNbO3 thin films,piezoresponse force microscope,polarization reversal,nano-domains
更新于2025-09-04 15:30:14
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Optical characterization of nanostructured Ge1???xSnxSe2.5 (x?=?0, 0.3, 0.5) films
摘要： The paper reports the optical properties of thin films of nanostructured Ge1 ? xSnxSe2.5 (x = 0, 0.3, 0.5) glassy alloys. The glassy alloys of Ge1 ? xSnxSe2.5 (x = 0, 0.3, 0.5) were prepared using melt quenching method. Thin films of nanostructured Ge1 ? xSnxSe2.5 (x = 0, 0.3, 0.5) glassy alloys were prepared using physical vapor deposition method. The films were characterized using XRD, EDX and TEM, which confirmed the amorphous nature, composition and formation of nanorods in the samples. Absorption and transmission spectra of thin films were recorded in the spectral range 400–2500 nm to obtain energy band gap, refractive index, extinction coefficient, dielectric constant etc. Results show that refractive index increases while band gap decreases on increase of Sn content in the Ge–Se system. This is due to the increase in density of defect states within band gap. The values of Urbach energy support the obtained results.
关键词： Thin films,Nanostructured glasses,Optical properties,Band gap
更新于2025-09-04 15:30:14
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Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films
摘要： Optical switches offer higher switching speeds than electronics, however, in most cases utilizing the interband transitions of the active medium for switching. As a result, the signal suffers heavy losses. In this article, we demonstrate a simple and yet efficient ultrafast broadband all-optical switching on ps timescale in the sub-bandgap region of the a-Se thin film, where the intrinsic absorption is very weak. The optical switching is attributed to short-lived transient defects that form localized states in the bandgap and possess a large electron-phonon coupling. We model these processes through first principles simulation that are in agreement with the experiments.
关键词： electron-phonon coupling,optical switches,interband transitions,all optical broadband switching,first principles simulation,amorphous selenium thin films,ultrafast defect dynamics,sub-bandgap region,transient defects
更新于2025-09-04 15:30:14
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Effect of strain on the modifications in electronic structure and resistive switching in Ca-doped BiFeO <sub/>3</sub> films
摘要： Strain-induced modifications in the structure, electronic structure, electrical, and ferroelectric properties of the Bi0.90Ca0.10FeO3 (BCFO)/Nb-doped SrTiO3 (100) films have been systematically studied in light of variation in film thickness. X-ray diffraction and ?-scan measurements confirm the single phase, (100) oriented epitaxial growth of all films. Room temperature absorption spectra show the presence of asymmetric broad peak around ～2.5 eV, which is indicative of the presence of defect states inside the bandgap and is attributed to the oxygen vacancies. Improvement in the bipolar resistive switching behavior with a decrement in oxygen vacancies and improvement in ferroelectric properties with increasing film thickness suggest the crucial role of oxygen vacancies and strain in modifying the electrical properties of the BCFO films. Improvement in the ferroelectric behavior is attributed to the increment in the Fe 3d-O 2p hybridization, localization of Fe 3deg/Bi 6s-O 2p orbitals, and reduction in the oxygen vacancies with an increase in the film thickness. Observed stable retention and large ON/OFF switching ratio in BCFO films make them a promising candidate for application in the non-volatile memory device.
关键词： Ca-doped BiFeO3 films,resistive switching,ferroelectric properties,strain,electronic structure
更新于2025-09-04 15:30:14
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Two distinct surface terminations of SrVO <sub/>3</sub> (001) ultrathin films as an influential factor on metallicity
摘要： Pulsed laser deposition-grown SrVO3 (001) ultrathin films on SrTiO3 (001) substrates were investigated by in situ low-temperature scanning tunneling microscopy and spectroscopy. SrVO3 (001) ultrathin films showed two distinct surface terminations. One termination was a ((√2 × √2)-R45° reconstruction as was previously observed for SrVO3 (001) thick films, while the other was a ((√5 × √5)-R26.6° reconstruction. Scanning tunneling spectroscopy revealed that the ((√2 × √2)-R45° surface shows a metallic electronic structure, whereas the ((√5 × √5)-R26.6° surface exhibits a significantly reduced density of states at the Fermi level. These results suggest that the surface reconstruction may be an important factor to influence metallicity in epitaxial ultrathin films of transition metal oxides.
关键词： ultrathin films,scanning tunneling microscopy,scanning tunneling spectroscopy,SrVO3,metallicity,surface terminations
更新于2025-09-04 15:30:14