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Plasmonic titanium nitride via atomic layer deposition: A low-temperature route
摘要： To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire grown by plasma-enhanced atomic layer deposition. TiN with low losses, high metallicity, and a plasma frequency below 500 nm was achieved at temperatures less than 500 °C by exploring the effects of chemisorption time, substrate temperature, and plasma exposure time on the material properties. A reduction in chemisorption time mitigates premature precursor decomposition at TS > 375 °C, and a trade-off between reduced impurity concentration and structural degradation caused by plasma bombardment is achieved for 25 s plasma exposure. 85 nm thick TiN films grown at a substrate temperature of 450 °C, compatible with CMOS processes, with 0.5 s chemisorption time and 25 s plasma exposure exhibited a high plasmonic figure of merit (jε0/ε00j) of 2.8 and resistivity of 31 μΩ cm. As a result of the improved quality, subwavelength apertures were fabricated in the TiN thin films and are shown to exhibit extraordinary transmission.
关键词： plasmonic figure of merit,CMOS compatible,low-temperature route,atomic layer deposition,plasmonic titanium nitride
更新于2025-09-23 15:19:57
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Hybrid Metasurfaces for Infrared-Multiband Radar Stealth-Compatible Materials Applications
摘要： The compatible stealth functionality in the infrared (IR) and radar wave bands is the most important research topic in the field of stealth material technology. Here, a new hybrid metasurface (HMS) for infrared-multiband radar stealth-compatible materials was proposed and studied. Two specifically designed metasurface layers that can control the infrared emission and microwave absorption were combined to realize radar and IR bi-stealth. The simulated and experimental results show that the HMS has five strong absorption peaks at f1=6.35, f2=8.38, f3=12.10, f4=15.37 and f5=18.05 GHz. In addition, the emissivity of the proposed HMS is less than 0.32 from 3 to 14 μm and shows low emissivity characteristics in the infrared band. These results demonstrate that the proposal has practical application to multispectral stealth technology.
关键词： infrared-radar stealth-compatible,metasurfaces,low emission
更新于2025-09-19 17:13:59
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Optimal Photonic Crystal Cavities for Coupling Nanoemitters to Photonic Integrated Circuits
摘要： Photonic integrated circuits that are manufactured with mature semiconductor technology hold great promise for realizing scalable quantum technology. Efficient interfaces between quantum emitters and nanophotonic devices are crucial building blocks for such implementations on silicon chips. These interfaces can be realized as nanobeam optical cavities with high quality factors and wavelength-scale mode volumes, thus providing enhanced coupling between nano-scale quantum emitters and nanophotonic circuits. Realizing such resonant structures is particularly challenging for the visible wavelength range, where many of the currently considered quantum emitters operate, and if compatibility with modern semiconductor nanofabrication processes is desired. Here, it is shown that photonic crystal nanobeam cavities for the visible spectrum can be designed and fabricated directly on-substrate with high quality factors and small mode volumes. Designs are compared based on deterministic and mode-matching methods and the latter is found advantageous for on-substrate realizations. The results pave the way for integrating quantum emitters with nanophotonic circuits for applications in quantum technology.
关键词： CMOS compatible,photonic crystal cavities,integrated photonics,high quality factor
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Germanium Photodetectors with 60-nm Absorption Coverage Extension and ～2× Quantum Efficiency Enhancement across L-Band
摘要： Germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors were demonstrated with a 60 nm extension on the absorption coverage and a ~2× enhancement on the quantum efficiency across the L-band.
关键词： germanium,longer wavelength detection,photodetectors,silicon nitride stressor,CMOS-compatible
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Reliability of CMOS-Compatible Ti / n-InP and Ti / p-InGaAs Ohmic Contacts for Hybrid III-V / Si Lasers
摘要： Electrical properties of CMOS-compatible titanium contacts on n-InP and p-In0.53Ga0.47As using 300 mm tools, in the scope of integrating them on III-V / Si hybrid lasers, are presented. Electrical behaviors after i) processing, ii) integration and back-end sequences, and iii) several simulated laser uses were investigated.
关键词： III-V / Si hybrid lasers,n-InP,reliability,CMOS-compatible,titanium contacts,p-InGaAs
更新于2025-09-16 10:30:52
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Indoor Photovoltaics: Photoactive Material Selection, Greener Ink Formulations, and Slot-Die Coated Active Layers
摘要： Strong visible light absorption is essential to achieve high power conversion efficiency in indoor organic photovoltaics (iOPVs). Here, we report iOPVs that exhibit high efficiency with high voltage under excitation by low power indoor lighting. Inverted type organic photovoltaic devices with active layer blends utilizing the polymer donor PPDT2FBT paired with fullerene, perylene diimide, or ring-fused acceptors that are 6.5-9.1% efficient under 1 sun are demonstrated to reach efficiencies from 10-17% under an indoor light source. This performance transcends that of a standard silicon photovoltaic device. Moreover, we compared iOPVs with active layers both spin-cast and slot-die cast from non-halogenated solvents and demonstrate comparable performance. This work opens a path towards high efficiency iOPVs for low power electronics.
关键词： Organic Photovoltaics,Perylene Diimide Dyes,Conjugated Polymers,Roll-to-Roll Compatible Coating,Green Solvent Processing
更新于2025-09-16 10:30:52
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CMOS-Compatible Titanium Nitride for On-Chip Plasmonic Schottky Photodetectors
摘要： Here, we propose a waveguide-integrated plasmonic Schottky photodetector (PD) operating based on an internal photoemission process with a titanium nitride plasmonic material. The theoretically examined structure employs an asymmetric metal?semiconductor?metal waveguide configuration with one of the electrodes being gold and the second being either gold, titanium, or titanium nitride. For the first time, we measured a Schottky barrier height of 0.67 eV for titanium nitride on p-doped silicon, which is very close to the optimal value of 0.697 eV. This barrier height will enable photodetection with a high signal-to-noise ratio when operating at a wavelength of 1550 nm. In addition to the measured optical properties of high absorption losses and reasonably large real part of the permittivity that are desired for this type of PD, titanium nitride is also compatible with easy integration on existing complementary metal?oxide?semiconductor technology. The use of titanium nitride results in a shorter penetration depth of the optical mode into the metal when compared to Ti, which in turn enhances the probability for transmission of hot electrons to the adjacent semiconductor, giving rise to an enhancement in responsivity.
关键词： titanium nitride,internal photoemission,CMOS-compatible,waveguide-integrated plasmonic Schottky photodetector,signal-to-noise ratio
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Germanium Photodetectors with 60-nm Absorption Coverage Extension and ～2× Quantum Efficiency Enhancement across L-Band
摘要： Germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors were demonstrated with a 60 nm extension on the absorption coverage and a ~2× enhancement on the quantum efficiency across the L-band.
关键词： silicon nitride stressor,CMOS-compatible,longer wavelength detection,photodetectors,germanium
更新于2025-09-12 10:27:22
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Soliton-effect optical pulse compression in CMOS-compatible ultra-silicon-rich nitride waveguides
摘要： The formation of optical solitons arises from the simultaneous presence of dispersive and nonlinear properties within a propagation medium. Chip-scale devices that support optical solitons harness high field confinement and flexibility in dispersion engineering for significantly smaller footprints and lower operating powers compared to fiber-based equivalents. High-order solitons evolve periodically as they propagate and experience a temporal narrowing at the start of each soliton period. This phenomenon allows strong temporal compression of optical pulses to be achieved. In this paper, soliton-effect temporal compression of optical pulses is demonstrated on a CMOS-compatible ultra-silicon-rich nitride (USRN) waveguide. We achieve 8.7× compression of 2 ps optical pulses using a low pulse energy of ～16 pJ, representing the largest demonstrated compression on an integrated photonic waveguide to date. The strong temporal compression is confirmed by numerical calculations of the nonlinear Schr?dinger equation to be attributed to the USRN waveguide’s large nonlinearity and negligible two-photon absorption at 1550 nm.
关键词： ultra-silicon-rich nitride,nonlinear Schr?dinger equation,pulse compression,optical solitons,CMOS-compatible
更新于2025-09-11 14:15:04
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[IEEE 2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama) - Toyama (2018.8.1-2018.8.4)] 2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama) - An X-Band Waveguide Jig for Pre-Screening Testing of Fully-Integrated Elementary Phased-Array Transceiver Antenna-in-Package
摘要： A large 9–10 GHz tile-based scalable phased-array system (over 128 elements) is built by ?ip-chip bonding of elementary antenna-in-package (AiP) modules on a large interposer PCB. Each module has a top radiating surface and a bottom BGA bonding surface. Due to the strict spacing requirement of a phased-array system, rework of any failed modules from the interposer PCB is prone to create more damages to the system and is prohibited. It is necessary to have a reliable and Automatic Test Equipment (ATE)-compatible test procedures to pre-screen quali?ed elementary modules for bonding. However, conventional ATE-compatible test jig designs can neither receive radiation signals from antenna nor feed test signals into the antenna. In this paper, a waveguide jig for AiP pre-screening is proposed. This jig system consists of a WR-90 adapter, a horn antenna, a Torlon cap and socket with POGO pins, and a PCB to interface with ATE. To test AiP transmitter, controls and test signals are provided through PCB connectors, with radiation signals collected from the WR-90 adaptor. To test the AiP receiver, radiation signals are feeding through the WR-90 adaptor, and the receiver output signals are collected from the PCB connectors. To calibrate waveguide jig return loss, a set of AiP SOL modules are used to remove PCB and test ?xture loss from the overall system loss. The waveguide jig achieves a ?at simulated ?2.4 dB from AiP antenna port to waveguide port from 8 to 12 GHz. This waveguide jig provides a fast and reliable approach to select quali?ed AiP for phased array system assemblies, and the ?nal system-level over-the-air testing.
关键词： phased-array system,waveguide jig,ATE-compatible,antenna-in-package,pre-screening
更新于2025-09-11 14:15:04