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Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering
摘要： The Si-doped AlN films were grown on sapphire (0001) by pulsed sputtering deposition (PSD), and their structural and electrical properties were investigated. A combination of PSD and high-temperature annealing process enabled the growth of high-quality AlN (0001) epitaxial films on sapphire (0001) substrates with atomically flat stepped and terraced surfaces. The transmission electron microscopy observations revealed that the majority of the threading dislocations in AlN belonged to the mixed- or edge-type, with densities of 2.8 × 108 and 4.4 × 109 cm?2, respectively. The Si-doping of AlN by PSD yielded a clear n-type conductivity with a maximum electron mobility of 44 cm2 V?1 s?1, which was the highest value reported for AlN that was grown on sapphire. These results clearly demonstrated the strong potential of the PSD technique for growing high-quality conductive n-type AlN on sapphire.
关键词： n-type conductivity,Si-doped AlN,pulsed sputtering deposition,electron mobility,sapphire
更新于2025-09-10 09:29:36
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Characterization of Er-doped AlN films prepared by RF magnetron sputtering
摘要： Er-doped AlN thin film were deposited on sapphire substrates (0001) by RF magnetron sputtering at different sputtering times. The crystalline structure, surface morphology and electrical properties of the thin films have been investigated. The XRD patterns and the SEM sectional diagram indicate that Er-doped AlN thin films presents the preferred orientation of C axis. The crystalline quality of the films rises first and then decreases with the increase of sputtering time and reaches best at 90 minutes. Piezoelectric coefficient d33 indicates maximum value of 9.53pm/V. Correspondingly, the best surface morphology of thin film was obtained at 90 minutes and the surface roughness reached a minimum of 2.012 nm. In addition, the change of resistance is same with change of the crystalline quality and the resistivity reached a maximum of 4.36*1012Ω?cm at 90minutes.
关键词： piezoelectric properties,Er-doped AlN,crystal structure,resistivity,sputtering time,magnetron sputtering
更新于2025-09-10 09:29:36