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- 2018
- gate oxide integrity
- avalanche ruggedness
- SiC MOSFET
- bias temperature instability
- Electronic Science and Technology
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Development of SPAD Based on Thermoelectrically Controlled Silicon Carbide Avalanche Photodiode
摘要： Single photon detectors, which are capable of ultra-sensitive detection in a low light level, have been widely used in a variety of applications such as remote sensing, biochemical science, and quantum information science. In particular, the rapid development of quantum information science has greatly improved the development of single photon detectors because it played a key role in achieving successful results in quantum key distribution and quantum communication. The single photon avalanche photodiodes (SPADs) are most conventional devices to detect photons because the APDs, the core elements of SPADs, are known to be advantageous to achieve cheap production and robust structure. In recent years, as the demand for ultraviolet light detection has increased, there have been actively reported on the development of APD detectors based on silicon carbide (SiC), which has a high gain only in the deep ultraviolet wavelength band. Here we report on the performance evaluation of lab-assembled SPAD based on SiC-APD.
关键词： ultraviolet light detection,quantum information science,Single photon detectors,SPAD,SiC-APD
更新于2025-09-16 10:30:52
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Preparation of hollow SiC ceramic fibre from polycarbosilane fibre by diffusion-controlled cross-linking method
摘要： Cross-linking is favourable for increasing ceramic yield and avoiding melting or deformation of SiC ceramic precursor polycarbosilane (PCS) during pyrolysis. In order to achieve hollow SiC fibre, PCS fibre with a limited cross-linking depth was prepared by chlorinating the Si–H group in the outer layer of PCS fibre followed by hydrolysis and condensation of the formed Si–Cl group. The chlorination was implemented through a gas–solid reaction between Cl2 and PCS fibre. Based on the results of energy-dispersive spectrometer and attenuated total reflectance–Fourier transform infrared spectroscopy, the diffusion-controlled chlorination reaction was confirmed. During hydrolysis, the catalysis of ammonia gas was necessary. According to the results of dissolution and degradation experiments, cross-linked PCS outer layer formed after chlorination, hydrolysis and condensation, and the outer layer had higher ceramic yield than the core part. After pyrolysis, SiC fibre with hollow morphology was formed. By adjusting the chlorination degree, the morphology of resulting hollow SiC fibre could be modified.
关键词： polycarbosilane,hollow structure,SiC fibre,cross-linked outer layer
更新于2025-09-16 10:30:52
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Microstructure Investigation of He<sup>+</sup>- Implanted and Post-Implantation-Annealed 4H-SiC
摘要： Microstructure damage and evolution in 4H-SiC under He-ion implantation and post-annealing have been investigated by the combination of fourier transform infrared spectrometer (FTIR), Raman scattering spectroscopy and high resolution X-ray diffractometer (HRXRD). After implantation, the 4H-SiC specimen exhibits a heavy damage and some amorphous state appear. With increasing annealing temperature, to some extent recovery in damaged lattices was observed, as a result of the peaks of Raman and HRXRD regain their intensities. However, the reverse annealing behavior in damaged peaks was displayed after annealed at 973K. This reverse annealing effect was revealed to be due to the formation and the growth of He bubbles above 973K.
关键词： HRXRD,SiC,FTIR,He-ion implantation,Annealing,Raman
更新于2025-09-16 10:30:52
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Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N<sub>2</sub>-Annealed SiO<sub>2</sub>/4H-SiC(0001) Structures
摘要： We demonstrated an x-ray photoelectron spectroscopy (XPS)-based technique to reveal the detailed nitrogen profile in nitrided SiO2/4H-SiC structures with sub-nanometer-scale-resolution. In this work, nitric oxide (NO)- and pure nitrogen (N2)-annealed SiO2/4H-SiC(0001) structures were characterized. The measured results of NO-annealed samples with various annealing duration indicate that preferential nitridation just at the SiO2/SiC interfaces (~0.3 nm) proceeds in the initial stage of NO annealing and a longer duration leads to the distribution of nitrogen in the bulk SiO2 within few nanometers of the interface. The high-temperature N2 annealing was found to induce not only SiO2/SiC interface nitridation similarly to NO annealing but also SiO2 surface nitridation.
关键词： NO-annealing,N2-annealing,SiO2/SiC interface,XPS,nitrogen profile
更新于2025-09-16 10:30:52
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Laser Annealing Simulations of Metallisations Deposited on 4H-SiC
摘要： Based on the finite elements method, thermal simulations were conducted to reproduce a laser annealing of several metals deposited on 4H-SiC. We estimated the temperature reached at the metal/4H-SiC interface to find out the best conditions to achieve ohmic contact formation through laser annealing. An optimization of Al/Ti/4H-SiC stacking was also considered. Simulations highlighted the low temperature of the non-irradiated SiC face that allows using grinded wafer.
关键词： 4H-SiC,Laser annealing,Simulation,Ohmic contact
更新于2025-09-16 10:30:52
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Highly focused femtosecond laser directed selective boron doping in single SiC nanowire device for n-p conversion
摘要： In this work, site-selective Boron (B) doping in SiC nanowires has been demonstrated by utilizing focused femtosecond (fs) laser irradiation. Raman spectra and electrical performance indicate that the localized element doping in pristine n-type SiC nanowires can convert the segment into p-type. The formation of crystalline defects and vacancies in nanowires under fs laser irradiation, along with the simultaneous dissociation of the dopant molecules, can accelerate the doping process. Single SiC nanowire p-n junction and ?eld-effect transistors with a p-type segment have been fabricated based on the pristine n-type nanowire, showing a modi?ed electrical response as a logic gate to programmed voltage signals. This laser controlled selective doping may provide an alternative for precise element doping in semiconductors at the nanoscale, which can be promising for nanoelectronic unit fabrication.
关键词： SiC nanowire,femtosecond laser,n-p conversion,nanoelectronics,boron doping
更新于2025-09-16 10:30:52
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Particle-in-cell simulation for experimental ion acceleration by fs laser-generated plasma
摘要： Particle in cell simulation was applied to fit the measurements of protons and ions acceleration obtained using an fs laser pulse irradiating a thin foil in target-normal-sheath-acceleration regime. The simulation code calculates the maximum electrical field generated in the rear side of the target driving the forward ions acceleration. The electron density versus time and space, and the plasma temperatures are evaluated using a medium contrast laser at an intensity of about 1019 Wcm?2. Proton acceleration above 10 MeV was experimentally measured using SiC detectors connected in time-of-flight configuration. A comparison between theoretical aspects and experimental data is reported and discussed.
关键词： ion acceleration,SiC,PIC,TNSA,fs laser
更新于2025-09-16 10:30:52
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3C-SiC/Si heterostructure: an excellent platform for position sensitive detectors based on photovoltaic effect
摘要： Single crystalline silicon carbide (3C-SiC) on Si-substrate has drawn significant attention in recent years due to its low wafer cost and excellent mechanical, chemical, and optoelectronic properties. However, the applications of the structure have primarily been focused on piezoresistive and pressure sensors, bio-mems, and photonics. Herein, we report another promising application of the heterostructure as a laser spot position sensitive detector based on the lateral photovoltaic effect (LPE) under nonuniform optical illuminations at zero-bias conditions. The LPE shows a linear dependency on spot positions and the sensitivity is found to be as high as 33 mV/mm under an illumination of 2.8 W/cm2 (635 nm). The structure also exhibits a linear dependency of LPE over a large distance (7 mm) between two electrodes, which is crucial for PSDs as the region with a linear dependency of LPE is only usable for PSDs. The LPE at different spot positions and under different illumination conditions have been investigated and explained based on the energy-band analysis. The temperature dependency of the LPE and position sensitivity are also investigated. Furthermore, the 2D-mapping of the lateral photovoltages reveals the potential for utilizing the 3C-SiC/Si heterostructure to detect the laser spot position precisely on a plane.
关键词： 3C-SiC/Si heterostructure,Lateral photovoltaic effect,position detector,energy-band analysis,harsh environments
更新于2025-09-16 10:30:52
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Management of losses (thermalization-transmission) in the Si-QDs inside 3Ca??SiC to design an ultra-high-efficiency solar cell
摘要： Thermalization loss is one of the major losses in the single junction solar cells. Here, 3C–SiC as a wide bandgap semiconductor is used to manage this loss. To prevent the transmission of low energy photons, the intermediate bands inside the forbidden band gap is used. To do this, silicon quantum dots inside silicon carbide is suggested. At first, the detailed balance calculations are carried out to determine the efficiency limits of a cell with one and two mini-bands. Optical simulation using 3D FEM solution of the Schrodinger equation is done to obtain mini-bands, wave functions, and hence the optical absorption coefficient. Dimension parameters of a QD array like radius, inter-dot spacing, and array size are optimized to obtain a maximum efficiency. Inter-band and inter-sub-band absorption coefficient are calculated. That applied to determine the optimum characteristic of a QD–based intermediate band solar cell. The photocurrent increases as the inter-dot spaces decrease. Suitable radiuses and inter-dot spaces are found to obtain a high absorption coefficient and hence higher photocurrent. Finally, the effect of non-radiative recombination on the device performances is simulated. These results provide significant information to design a three-dimensional QDs based intermediate band solar cells.
关键词： Intermediate band,Super lattice,Silicon carbide,Multi-band,3D schrodinger,Si/SiC quantum dot,High efficiency
更新于2025-09-16 10:30:52
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MV Power Conversion Systems Enabled by High-Voltage SiC Devices [Happenings]
摘要： The current electrical distribution system needs to adapt due to an increase in demand and requirements for a “smarter grid,” which are required because of the proliferation of distributed energy resources (DERs). Transformers form an integral part of these electrical grids, and an upgrade to handle the additional requirements that come along is imperative. Unfortunately, an upgrade in a conventional sense is not possible, so it is time to think beyond conventional transformers. Thanks to recent strides in power electronics research and the availability of high-voltage (HV) silicon carbide (SiC) power semiconductor devices, we can contemplate building a smart “solid-state transformer” to handle the demands of the smart grid. In electrical distribution systems, the transformers convert thousands of volts [medium voltage (MV)] into lower voltages that can be safely used in homes and businesses [1]. With emerging technologies in building and fabricating MV SiC-based power semiconductor devices, MV power conversion on a large-scale scenario seems feasible. While companies, such as Wolfspeed (CREE), General Electric, Infineon Technologies, Mitsubishi, and ROHM, continue to develop and improve these MV semiconductor devices, we at the FREEDM Systems Center are aiming at the application side of things to ensure a market for these power devices.
关键词： SiC devices,smart grid,solid-state transformer,MV power conversion,power conversion
更新于2025-09-16 10:30:52