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- 2018
- gate oxide integrity
- avalanche ruggedness
- SiC MOSFET
- bias temperature instability
- Electronic Science and Technology
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[IEEE 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Warsaw (2017.9.11-2017.9.14)] 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Improvements of switching energy of SiC transistor with respect of chip integrity and EMC standards
摘要： This paper deals with the reduction of the switching energy losses of a SiC transistor by boosting its gate current. Notoriously, wide band-gap semiconductor transistors exhibit very fast switching performances, which provoke undesirables oscillations at high frequencies. An auxiliary circuit, located at the semiconductor device terminals, is developed to limit the electrical stresses, deleterious for the transistor integrity, and to reduce the EMC conducted interferences without modifying the current and voltage slopes during the switching transition. Firstly, the SiC MosFET is characterized on SABER environment from MosFET template available on the library. The behavior of the obtained model is compared with Model Architect tool, available in the same environment. Experimental tests are carried out and confirm the behaviors predicted by simulation. The obtained results underlines the good accuracy and the merits of the simulation model developed in this work, despite the use of the power transistor in a complex configuration.
关键词： SABER Simulator,EMC,Simulation Model of SiC transistor,Laminar Bus Bar
更新于2025-09-23 15:22:29
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Regional Manufacturing Cost Structures and Supply Chain Considerations for SiC Power Electronics in Medium Voltage Motor Drives
摘要： With the growth in wide bandgap (WBG) semiconductors, specifically Silicon Carbide (SiC), the technology has matured enough to highlight a need to understand the drivers of manufacturing cost, regional manufacturing costs, and plant location decisions. Further, ongoing research and investment, necessitates analytical analysis to help inform development of wide bandgap technologies. The paper explores the anticipated device, module, and motor drive cost at volume manufacturing. It additionally outlines the current regional contributors to the supply chain and proposes how the base models can be used to evaluate the cost reduction potential of proposed research advances.
关键词： Wide bandgap,Supply chain,SiC,Wide-band gap,Wideband gap,Techno-economic,WBG,bottoms-up,Medium voltage,Motor drive,Wide band-gap,Analysis,Power electronics,Cost model
更新于2025-09-23 15:22:29
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Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs
摘要： This paper presents the impact of a short-circuit event on the gate reliability in planar SiC MOSFETs, which becomes more critical with increased junction temperature and higher bias voltages. The electrical waveforms indicate that a gate degradation mechanism takes place, showing a large gate leakage current that increases as the gate degrades more and more. A failure analysis has been performed on the degraded SiC MOSFET and then compared to the structure of a new device to identify possible defects/abnormalities. A Focused-Ion Beam cut is performed showing a number of differences in comparison to the new device: (i) cracks between the poly-silicon gate and aluminium source, (ii) metal particles near the source contact, and (iii) alterations in the top surface of the aluminium source. The defects have been correlated with the increase in gate-leakage current and drain-leakage current.
关键词： Focused-Ion Beam,Short circuit,Gate-oxide breakdown,Gate oxide,Degradation,Defects,Reliability,SiC MOSFET,Failure analysis,SEM
更新于2025-09-23 15:22:29
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Catalytic synthesis of SiC nanowires in an open system
摘要： SiC nanowires (NWs) are usually synthesized in a closed vacuum reaction system which limits the yield of SiC NWs. In this work, SiC NWs and carbon nanotubes were synthesized in an open tube furnace at 1550 ℃ with Si powder as silicon sources, ethanol as carbon sources and ferrocene as catalyst. The as-synthesized products were ultralong β-SiC NWs with the diameter about 80-100 nm and the length up to several tens micrometers. The diameter of the carbon nanotubes was about 20-30 nm. The carbon nanotube yarns about 20 cm in length were obtained at the end of the tube furnace. The growth mechanism of SiC NWs and carbon nanotubes were proposed. Compared with the traditional synthetic techniques in the high vacuum closed system, the novel synthesis method in the open system provided a new approach to the synthesis of SiC NWs.
关键词： Carbon nanotubes,SiC nanowires,Open reaction system,Growth mechanism
更新于2025-09-23 15:22:29
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Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD
摘要： We report on the electrical properties of the AlN/4H-SiC interface using capacitance- and conductance-voltage (CV and GV) analysis of AlN/SiC MIS capacitors. The crystalline AlN layers are made by hot wall MOCVD. CV analysis at room temperature reveals an order of magnitude lower density of interface traps at the AlN/SiC interface than at nitrided SiO2/SiC interfaces. Electron trapping in bulk traps within the AlN is significant when the MIS capacitors are biased into accumulation resulting in a large flatband voltage shift towards higher gate voltage. This process is reversible and the electrons are fully released from the AlN layer if depletion bias is applied at elevated temperatures. Current-voltage (IV) analysis reveals that the breakdown electric field intensity across the AlN dielectric is 3–4 MV/cm and is limited by trap assisted leakage. By depositing an additional SiO2 layer on top of the AlN layer, it is possible to increase the breakdown voltage of the MIS capacitors significantly without having much impact on the quality of the AlN/SiC interface.
关键词： AlN/4H-SiC interface,MIS capacitors,Gate dielectrics
更新于2025-09-23 15:22:29
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Study on 4H-SiC GGNMOS based ESD Protection Circuit with Low Trigger Voltage Using Gate-Body Floating Technique for 70 V Applications
摘要： In this letter, we propose a 4H-SiC based electrostatic discharge (ESD) protection circuit with a new structure that has low on-resistance and good high-temperature characteristics while improving the high triggering voltage by applying an improved floating technology to the 4H-SiC grounded-gate n-type metal–oxide–semiconductor (GGNMOS) for 70V applications. Electrical characteristics of the 4H-SiC-based conventional GGNMOS, floating-body NMOS (FBNMOS), and the proposed ESD protection circuit were compared and analyzed using the transmission-line pulse test. To verify the high-temperature characteristics of the proposed 4H-SiC-based ESD protection circuit, its thermal reliability was measured at high temperatures (300–500 K).
关键词： FBNMOS,electrostatic discharge protection,trigger voltage,GFNMOS,GGNMOS,4H-SiC
更新于2025-09-23 15:22:29
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Optical and Microstructural Investigation of Heavy B-Doping Effects in Sublimation-Grown 3C-SiC
摘要： In this work, a complementary microstructural and optical approach is used to define processing conditions favorable for the formation of deep boron-related acceptor centers that may provide a pathway for achieving an intermediate band behavior in highly B-doped 3C-SiC. The crystallinity, boron solubility and precipitation mechanisms in sublimation-grown 3C-SiC crystals implanted to 1-3 at.% B concentrations were investigated by STEM. The revealed defect formation and boron precipitation trends upon thermal treatment in the range 1100-2000oC have been cross-correlated with the optical characterization results provided by imaging PL spectroscopy. We discuss optical activity of the implanted B ions in terms of both shallow acceptors and deep D-centers, a complex formed by a boron atom and a carbon vacancy, and associate the observed spectral developments upon annealing with the strong temperature dependence of the D-center formation efficiency, which is further enhanced by the presence of implantation-induced defects.
关键词： photoluminescence,defects,3C-SiC,STEM,implantation,boron doping
更新于2025-09-23 15:22:29
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Light Metals 2014 (Grandfield/Light) || N-SiC Side Lining - Variations of Materials Structure
摘要： The key process in fabrication of Nitride bonded silicon carbide side lining of reduction pots is the reaction between Nitrogen and Silicon. Silicon may react with Nitrogen in solid, liquid and gaseous phase. The reaction is strongly exothermal. Almost all N-SiC refractory materials of more or less big shapes have the gradients of porosity from middle to the edges. The reason for these gradients may be the overheating of the middle part of shapes, compared to near surface layers, due to the exothermal effect and consequent increased concentration of volatile Silicon. Volatile Silicon tends to move to areas of lower temperature and the gradients of porosity are 1-2 %, but sometimes it may reach 5-7%. The problems with side lining of reduction pots may be because of the design of the pots, due to the overheating of the bath, yet the structure of N-SiC materials might be also critical.
关键词： corrosion resistance,side lining,N-SiC refractory
更新于2025-09-23 15:22:29
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[IEEE IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society - D.C., DC, USA (2018.10.21-2018.10.23)] IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society - Controller-Hardware-in-the-Loop Testbed for Fast-Switching SiC-Based 50-kW PV Inverter
摘要： The recent advent of wide bandgap power semiconductor devices will lay the path for future power converters. These devices provide the advantage of high switching speed and lower losses. The high cost and high switching speeds of these devices provide a challenge in the development and validation of the fast-switching inverter controls with accuracy comparable to that of a hardware setup. In this paper, a field programmable gate array (FPGA) real-time simulator-based controller-hardware-in-the-loop (CHIL) testbed is used to verify the low-level and advanced inverter controls for fast-switching wide bandgap-based photovoltaic string inverter. The paper also includes development of the CHIL testbed, which is run at a time step of 500 ns in order to implement 20-kHz switching frequency. The developed CHIL testbed is validated through experimental results from a three-phase, 50-kW, 480-VLLrms SiC device-based inverter.
关键词： controller hardware-in-the-loop,high switching frequency,SiC devices,power electronics converters,advanced grid-support functions
更新于2025-09-23 15:22:29
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Large area SiC-UV phothodiode for spectroscopy portable system
摘要： In this work, we present the extensive characterization of large area Silicon Carbide based UV sensors candidate for outdoors spectroscopic applications of gas or liquid. The proposed SiC Schottky devices exhibit dark current density of 0.12 nA/cm2 @ 15 V, a 0.12 A/W responsivity @ 300 nm, optimal visible blindness and switching time of ~ 190 ns. Effects of temperature on the sensor performance, of crucial interest for outdoors applications, are also examined in the range from -20 °C to 90 °C.
关键词： optical sensor,Large area UV photodetector,Schottky diode,SiC detector
更新于2025-09-23 15:22:29