研究目的
To define processing conditions favorable for the formation of deep boron-related acceptor centers that may provide a pathway for achieving an intermediate band behavior in highly B-doped 3C-SiC.
研究成果
The combined microstructural and optical approach revealed that optimal annealing at around 1700°C favors the formation of deep boron-related D-centers, which could enable intermediate band behavior in highly boron-doped 3C-SiC. This is enhanced by implantation-induced defects, but further optimizations are possible through controlled vacancy concentrations.
研究不足
The study is limited to sublimation-grown 3C-SiC crystals and specific implantation and annealing conditions. The presence of implantation-induced defects may complicate the interpretation, and fine control of vacancy concentrations requires further optimization methods.
1：Experimental Design and Method Selection:
A complementary microstructural and optical approach was used, involving STEM for microstructural analysis and imaging PL spectroscopy for optical characterization. Samples were implanted with boron at elevated temperatures and annealed at various temperatures to study defect formation and boron precipitation.
2：Sample Selection and Data Sources:
Sublimation-grown 3C-SiC crystals were used, implanted with 1, 2, and 3 at.% boron at 400 and 500°C using multiple energies to form a box-like profile.
3：List of Experimental Equipment and Materials:
Equipment includes a probe-corrected FEI Titan G2 60-300 microscope for STEM, an imaging PL spectroscopy system with HORIBA iHR320 spectrograph and Andor DL-658M EMCCD detector, a 325 nm HeCd cw-laser for excitation, and a closed-cycle He-refrigerator for low-temperature measurements.
4：Experimental Procedures and Operational Workflow:
Implantation was performed with total dose of 8.5×10^16 atoms/cm2, followed by annealing at 1100-2000°C for 1h. STEM was used in bright-field, low-angle, and high-angle annular dark fields. PL measurements were conducted at 10K.
5：5×10^16 atoms/cm2, followed by annealing at 1100-2000°C for 1h. STEM was used in bright-field, low-angle, and high-angle annular dark fields. PL measurements were conducted at 10K. Data Analysis Methods:
5. Data Analysis Methods: STEM images were analyzed for defect and precipitate trends. PL spectra were integrated over near band edge (NBE), visible (VIS), and near-infrared (NIR) regions to monitor spectral developments and correlate with microstructural changes.
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FEI Titan G2 60-300 microscope
Titan G2 60-300
FEI
Used for scanning transmission electron microscopy (STEM) in bright-field, low-angle, and high-angle annular dark fields to investigate crystallinity, boron solubility, and precipitation mechanisms.
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HORIBA iHR320 spectrograph
iHR320
HORIBA
Part of the imaging PL spectroscopy system for optical characterization, providing spectral resolution of 0.2 nm.
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Andor DL-658M EMCCD detector
DL-658M
Andor
Used as a detector in the imaging PL spectroscopy system for acquiring time-integrated spectra and imaging PL patterns.
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HeCd cw-laser
Used as an excitation source at 325 nm for PL measurements, with a penetration depth of approximately 1.5 μm in 3C-SiC.
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closed-cycle He-refrigerator
Used to maintain samples at 10K during PL measurements for low-temperature spectroscopy.
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