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- 2018
- gate oxide integrity
- avalanche ruggedness
- SiC MOSFET
- bias temperature instability
- Electronic Science and Technology
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A Compact Series-Connected SiC MOSFETs Module and Its Application in High Voltage Nanosecond Pulse Generator
摘要： Nanosecond pulse discharge plasma has many prospects in industrial applications, and high voltage repetitive nanosecond pulse generators with compact design and light weight have become one of the key issues limiting its development in some applications. This paper presents a high voltage series-connected SiC MOSFETs module which can be served as the main switch in a repetitive high voltage nanosecond pulse generator. This kind of series-connected MOSFETs module with only single external gate driver requiring very few components is very suitable for compact assembly. By analyzing the working principle, three topologies of series-connected MOSFETs module are proposed. The switching behaviors of the three different topologies with four SiC MOSFETs series-connected are compared experimentally. The variation of switching characteristics of series-connection SiC MOSFETs module with different numbers of devices are investigated. The layout is also optimized to shorten pulse front time and improve output pulse quality. Furthermore, a 10 kV SiC MOSFETs module with a turn-on transition time ~10 ns is developed. The double pulse test result demonstrates excellent switching performances. Finally, a compact and high voltage pulse generator composed of three 10 kV SiC MOSFETs module is tailored, with a typical rise time ~40 ns and peak voltage of ~30 kV.
关键词： high voltage nanosecond pulse generator,series-connection,SiC MOSFET
更新于2025-09-23 15:22:29
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Chemical Vapor Infiltration of the Hexagonal Boron Nitride Interphase for SiC Fiber-Reinforced HP-Si<sub>3</sub>N<sub>4</sub> Matrix Composite
摘要： This work describes the processing of SiC fiber-reinforced Si3N4 matrix composites with boron nitride (BN) interphase. The BN interphase was processed by chemical vapor infiltration (CVI) with BF3/NH3 gaseous precursors. The BN interphase modification involved the continuous treatment of Hi-Nicalon SiC fibers. The relations between (i) the processing parameters, (ii) the mechanisms controlling the kinetics of the CVI of the BN, and (iii) the structure of the deposited BN are presented. A single- or multi-layer BN interphase can be produced depending on the CVI conditions imposed on the fibers during the continuous process. A surface reaction mechanism controlling the CVI promotes a smooth, isotropic BN coating. An anisotropic BN coating can be produced when the CVI kinetics are controlled by a mass transport mechanism. With a controlled temperature gradient, the BN interphase is then made by stacking successive isotropic and anisotropic layers.
关键词： SiC fibers (Hi-Nicalon),CVI,boron nitride interphase
更新于2025-09-23 15:22:29
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Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
摘要： In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for comparison using numerical simulations. Step-DZ-JTE greatly reduces the sensitivity of breakdown voltage (BV) and surface charges (SC). For a 30-μm thick epi-layer, the optimized Step-DZ-JTE shows 90% of the theoretical BV with a wide tolerance of 12.2 × 10^12 cm^?2 to the JTE dose and 85% of the theoretical BV with an improved tolerance of 3.7 × 10^12 cm^?2 to the positive SC are obtained. Furthermore, when combined with the field plate technique, the performance of the Step-DZ-JTE is further improved.
关键词： breakdown voltage (BV),edge termination,junction termination extension (JTE),silicon carbide (SiC)
更新于2025-09-23 15:22:29
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Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC
摘要： For high voltage SiC bipolar devices, carrier lifetime is an important parameter, and for optimization of device performance, we need to control the distribution of the carrier lifetime in a wafer. So far, there have been limited systems for depth-resolved carrier lifetime measurements without the necessity of making a cross sectional cut. In this study, we adopted a free carrier absorption technique and made local overlapping of the probe laser light with excitation laser light to develop depth-resolved carrier lifetime measurements. We named the developed system a microscopic FCA system and demonstrated measurement results for samples with and without intentional carrier lifetime distribution.
关键词： free carrier absorption,4H-SiC,carrier lifetime
更新于2025-09-23 15:22:29
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The effect of grain-size on fracture of polycrystalline silicon carbide: A multiscale analysis using a molecular dynamics-peridynamics framework
摘要： A robust atomistic to mesoscale computational multiscale/multiphysics modeling framework that explicitly takes into account atomic-scale descriptions of grain-boundaries, is implemented to examine the interplay between grain-size and fracture of polycrystalline cubic silicon carbide (3C-SiC). A salient feature of the developed framework is the establishment of scale-parity between the chosen atomistic and the mesoscale methods namely molecular dynamics (MD) and peridynamics (PD) respectively, which enables the ability to model the effect of the underlying microstructure as well as obtain relevant new insights into the role of grain-size on the ensuing mechanical response of 3C-SiC. Material properties such as elastic modulus, and fracture toughness of single crystals and bicrystals of various orientations are obtained from MD simulations, and using appropriate statistical analysis, MD derived properties are interfaced with PD simulations, resulting in mesoscale simulations that accurately predict the role of grain-size on failure strength, fracture energy, elastic modulus, fracture toughness, and tensile toughness of polycrystalline 3C-SiC. In particular, it is seen that the fracture strength follows a Hall-Petch law with respect to grain-size variations, while mode-I fracture toughness increases with increasing grain-size, consistent with available literature on brittle fracture of polycrystalline materials. Equally importantly, the developed MD-PD multiscale/multiphysics framework represents an important step towards developing materials modeling paradigms that can provide a comprehensive and predictive description of the microstructure-property-performance interplay in solid-state materials.
关键词： Peridynamics,Polycrystalline,Multiscale modeling,3C-SiC,Grain boundaries,Molecular dynamics
更新于2025-09-23 15:22:29
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Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC
摘要： In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Our data are interpreted by a model based on the competition of the SiC decomposition rate, controlled by the Ar flow, with a uniform graphene buffer layer formation under the equilibrium process at the SiC surface. The proper choice of a set of growth parameters allows the growth of defect-free, ultra-smooth and coherent graphene-free buffer layer and bilayer-free monolayer graphene sheets which can be transformed into large-area high-quality quasi-freestanding monolayer and bilayer graphene by hydrogen intercalation. AFM, scanning tunneling microscopy, Raman spectroscopy and electronic transport measurements underline the excellent homogeneity of the resulting quasi-freestanding layers. Electronic transport measurements in four-point probe configuration reveal a homogeneous low resistance anisotropy on both μm- and mm scales.
关键词： SiC terrace steps,polymer assisted sublimation growth,Epitaxial graphene,freestanding bilayer graphene,argon gas flow,graphene buffer layer,monolayer graphene,resistance anisotropy,large-scale graphene growth,freestanding monolayer graphene
更新于2025-09-23 15:22:29
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Online Junction Temperature Extraction of SiC Power MOSFETs with Temperature Sensitive Optic Parameter (TSOP) Approach
摘要： Accurate information of the junction temperature of SiC power MOSFETs ensures safe operation and helps reliability assessment of the devices. In this paper, an online junction temperature extraction method is proposed based on the electroluminescence phenomenon of the body diode of SiC power MOSFETs. It is found that during the forward conduction interval of the body diode, visible blue light is emitted around the chip, which ascribes to the radiative recombination in the low doped region of SiC MOSFETs. Experimental results suggest the light intensity changes linearly with the variation of the temperature and behaves as a temperature sensitive optic parameter (TSOP). Further, an electro-thermal-optic model is proposed to reveal the relationship between electroluminescence intensity, forward current and junction temperature. Based on the TSOP, an online junction temperature extraction method is proposed for SiC MOSFETs and verified in a SiC MOSFET based inverter. Compared with state-of-the-art methods, the proposed junction temperature measurement method is contactless and immune from the aging of the package.
关键词： junction temperature extraction,Body diode,thermal management,electroluminescence,SiC MOSFETs
更新于2025-09-23 15:22:29
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Influence of Structure Modification of Silicon Carbide Materials on Their Dynamic Properties
摘要： SiC ceramic materials were prepared both by reactive and liquid-phase sintering. Structure was modified during preparation by introducing reinforcing SiC-filaments and by synthesizing grains self-reinforcing the structure. The armor-protection capacity was determined by estimating the bullet penetration delay time.
关键词： reinforced materials,bullet resistance of the ceramic material,cracking resistance,liquid-phase sintered silicon carbide (LPS-SiC),reaction-sintered silicon carbide (SiSiC)
更新于2025-09-23 15:21:21
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-electron materials: Sn monolayer on a SiC(0001) surface
摘要： Materials with sp magnetism demonstrate strongly nonlocal Coulomb interactions, which opens a way to probe correlations in the regimes not achievable in transition metal compounds. By the example of Sn monolayer on a SiC(0001) surface, we show that such systems exhibit unusual but intriguing magnetic properties at the nanoscale. Physically, this is attributed to the presence of a significant ferromagnetic coupling, the so-called direct exchange, which fully compensates ubiquitous antiferromagnetic interactions of the superexchange origin. Having a nonlocal nature, the direct exchange was previously ignored because it cannot be captured within the conventional density functional methods and significantly challenges ground state models earlier proposed for Sn/SiC(0001). Furthermore, heavy adatoms induce strong spin-orbit coupling, which leads to a highly anisotropic form of the spin Hamiltonian, in which the Dzyaloshinskii-Moriya interaction (DMI) is dominant. The latter is suggested to be responsible for the formation of a nanoskyrmion state at realistic magnetic fields and temperatures.
关键词： Dzyaloshinskii-Moriya interaction,SiC(0001) surface,direct exchange,nonlocal Coulomb interactions,nanoskyrmion state,sp magnetism,Sn monolayer
更新于2025-09-23 15:21:21
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In situ high-pressure spectroscopic studies using moissanite (4H-SiC) anvils
摘要： We examined the Raman scattering and IR absorption spectroscopy of 4H-SiC and its performance as an anvil material for high-pressure UV-visible absorption spectroscopic measurements. The first- and second-order Raman peaks of 4H-SiC and diamond do not coincide. 4H-SiC does not have obvious signals from 2330-5000 cm-1, suggesting that 4H-SiC anvils are beneficial for high-pressure studies of samples whose Raman signals locate in the region of diamond. Above 1800 cm-1, the transmitted signal of 4H-SiC in the IR absorption spectra, measured through 4.6 mm thickness is much higher than that of type IIa diamond. An in situ high-pressure UV-visible absorption spectroscopy study on CdI2 was carried out up to 28.0 GPa using 4H-SiC anvil cells (4H-SAC) with a 400 μm culet and the acquired band gap narrowed with increasing pressure. These results show that 4H-SiC has an excellent performance in high-pressure spectroscopic studies.
关键词： IR absorption spectroscopy,high-pressure,UV-visible absorption spectroscopy,Raman spectroscopy,4H-SiC
更新于2025-09-23 15:21:21