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- 2018
- gate oxide integrity
- avalanche ruggedness
- SiC MOSFET
- bias temperature instability
- Electronic Science and Technology
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AlGaN deep-ultraviolet light-emitting diodes grown on SiC substrates
摘要： The disinfection industry would greatly benefit from efficient, robust, high-power deep-ultraviolet light-emitting diodes (UV-C LEDs). However, the performance of UV-C AlGaN LEDs is limited by poor light-extraction efficiency (LEE) and the presence of a large density of threading dislocations. We demonstrate high power AlGaN LEDs grown on SiC with high LEE and low threading dislocation density. We employ a crack-free AlN buffer layer with low threading dislocation density and a technique to fabricate thin-film UV LEDs by removing the SiC substrate, with a highly selective SF6 etch. The LEDs (278 nm) have a turn-on voltage of 4.3 V and a CW power of 8 mW (82 mW/mm2) and external quantum efficiency (EQE) of 1.8% at 95 mA. KOH submicron roughening of AlN surface (nitrogen-polar) and improved p-contact reflectivity are found to be effective in improving the LEE of UV light. We estimate the improved LEE by semi-empirical calculations to be 33% (without encapsulation). This work establishes UV LEDs grown on SiC substrates as a viable architecture to large-area, high-brightness, and high power UV LEDs.
关键词： AlGaN LEDs,UV-C LEDs,light extraction efficiency,disinfection technology,AlN,external quantum efficiency,SiC,substrate removal
更新于2025-09-19 17:13:59
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Fabrication of silicon carbide nanoparticles using picosecond pulsed laser ablation in acetone with characterizations from TEM and XRD
摘要： We fabricated SiC nanoparticles (NPs) using a laser ablation method in acetone with a picosecond pulsed laser and characterized the resulting sizes, shapes, and crystal structures using transmission electron microscopy (TEM) and X-ray diffraction (XRD). We revealed two formation processes for the SiC NPs. The main process was the formation of spherical NPs with diameters primarily less than 10 nm. The crystal structure was 3C-SiC, which did not depend on a target polytype. Therefore, it is concluded that these NPs are grown from atomic molecules that disassociate from targets in the ablation process. As a result of a Rietbelt analysis of the XRD patterns, we clearly found that almost all NPs were single crystals. In addition, a stacking fault in the crystal was observed in the TEM image, which affects the XRD pattern. The other process was the formation of NPs with diameters from 30 to 80 nm with crystal structures that were the same as the targets. This indicates that these NPs were generated as fragments of the target. Our findings are useful for applications of SiC NPs to selectively control their size, shape, and crystal structure using laser ablation.
关键词： silicon carbide nanoparticles,3C-SiC,picosecond pulsed laser ablation,TEM,XRD
更新于2025-09-19 17:13:59
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[IEEE 2019 International Semiconductor Conference (CAS) - Sinaia, Romania (2019.10.9-2019.10.11)] 2019 International Semiconductor Conference (CAS) - Voltage Controlled Oscillator for Small-Signal Capacitance Sensing
摘要： SiC MOSFETs are applied to constitute a three-phase, 5-kW LLC series resonant dc/dc converter with isolation transformers. A switching frequency of around 200 kHz for the transistors successfully reduces the volume of these isolation transformers, whereas insulated-gate bipolar transistors (IGBTs) are not capable of achieving such a high switching speed. The high-voltage tolerance of SiC MOSFETs, 1200 V, enables increasing the input voltage up to 600 V. High-voltage tolerance, on the other hand, is not compatible with low on-resistance for Si MOSFETs. A three-phase circuit topology is used to achieve up to 5 kW of power capacity for the converter and reduce per-phase current at the same time. Current-balancing transformers among these three phases effectively suppress a maximum peak current from arising in the circuit, a technique that miniaturizes the input and output capacitances. The conversion efficiency of the converter reaches 97.6% at 5-kW operation.
关键词： SiC MOSFETs,zero-voltage switching (ZVS),Current-balancing transformers,zero-current switching (ZCS),three phase,LLC resonant converter
更新于2025-09-19 17:13:59
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Recycling of silicon scraps by directional solidification coupled with alternating electromagnetic field and its electrical property
摘要： In this paper, alternating electromagnetic field and directional solidification are used to separate SiC and Si3N4 in polycrystalline silicon tailings. It is found the inclusion particles move downward at the center of the ingot and moving upward at the edge of the ingot by a variety of forces during the directional solidification process. The electromagnetic force accelerates the melt flow and enhances the lift force, so that larger particles can be pushed to the top of the ingot. Rod-shaped Si3N4 and block-shaped SiC particles show symbiotic relationship between each other. The aggregation of inclusion particles adsorbs metallic impurities, especially volatile metals, due to the effects of mushy region and short-circuit diffusion. The average conversion efficiency of the solar cells (Al-BSF method) prepared using the recycled silicon reached 18.56%, which meets the demand of the solar cells.
关键词： SiC,Alternating magnetic field,Directional solidification,Si3N4,Polycrystalline silicon
更新于2025-09-19 17:13:59
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Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
摘要： This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epitaxial layers. Samples were then characterized through micro-Raman spectroscopy, Photoluminescence (PL) and Transmission Electron Microscopy (TEM) and results were compared with those coming from P implanted thermally annealed samples at 1650–1700–1750 °C for 30 min. The activity outcome shows that laser annealing allows to achieve full crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Moreover, laser treated crystal shows an almost stress-free lattice with respect to thermally annealed samples that are characterized by high point and extended defects concentration. Laser annealing process, instead, allows to strongly reduce carbon vacancy (VC) concentration in the implanted area and to avoid intra-bandgap carrier recombination centres. Implanted area was almost preserved, except for some surface oxidation processes due to oxygen leakage inside the testing chamber. However, the results of this experimental activity gives way to laser annealing process viability for damage recovery and dopant activation inside the implanted area.
关键词： ion implantation,phosphorus,point defects,laser annealing,photoluminescence,aluminum,TEM,Metal Oxide Semiconductor Field Effect Transistor (MOSFET),SiC,Raman
更新于2025-09-19 17:13:59
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Ion acceleration from aluminium plasma generated by a femtosecond laser in different conditions
摘要： Non-equilibrium plasma was obtained by irradiating Al foils in vacuum with a femtosecond (fs) laser at intensities of the order of 1018 W/cm2. Protons and other light ions were accelerated in the forward direction by using the target-normal-sheath acceleration regime. Time-of-flight technique was employed to measure the ions' kinetic energy using SiC detectors placed at known distances and angles. The ion acceleration was monitored under different conditions of laser focal position, laser pulse energy, and laser contrast. The target was irradiated using different thicknesses and anti-reflecting graphene films. By optimizing the laser parameters, irradiation conditions, and target properties, it was possible to accelerate up to 2.3 MeV per charge state, as will be presented and discussed.
关键词： aluminium target,femtosecond laser,TNSA,SiC detector,ion acceleration
更新于2025-09-19 17:13:59
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Effects of initial density during laser machining assisted CVI process and its influence on strength of C/SiC composites
摘要： Novel laser-assisted chemical vapor infiltration (LA-CVI) technique has been used to improve the density and strength of carbon fiber reinforced SiC composites (C/SiC). Initial density of C/SiC before laser machining played an important role in determining the final density and strength of composites. Results show that final density and bending strength of lower initial density composites were better than that of higher initial density samples after LA-CVI process, while the porosity exhibited opposite behavior. Micro-CT and COMSEL simulation results verify that after LA-CVI process, dense band width of C/SiC with initial density of 1.5 g/cm3 was twice as that of C/SiC with initial density of 1.8 g/cm3. This led to crack propagation bypassing the micro-hole. In conclusion, low initial density when laser machining was carried out resulted in better properties of final composites.
关键词： Bending strength,LA-CVI,C/SiC composites,Micro-structure
更新于2025-09-19 17:13:59
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Band-energy estimation on silicon cap annealed 4H-SiC surface using hard X-ray photoelectron spectroscopy
摘要： Silicon-cap annealing (SiCA) emerged as a promising silicidation-less ohmic contact formation method that can solve the crucial reliability limitation of ohmic contacts formed with metals; this limitation was due to carbon aggregation introduced during silicidation annealing. However, no previous study for a complete understanding of SiCA effects on the metal/SiC exists. In this study, the band-energy state of silicidation-less ohmic contacts formed by SiCA-SiC is directly estimated using hard X-ray photoelectron spectroscopy (HAXPES). The results show that Si-dot formation on the SiC surface reduces the contacts resistivity, and ohmic contact behavior is still observed even after Si-dot removal. A peak position analysis of Si 1 s orbit using HAXPES shows a clear increase in the band energy under various SiC surface conditions. Particularly, the Al/SiCA-SiC sample shows a peak shift of 0.765 eV. This strong potential barrier lowering the derived formation of the thin-depletion layer and low potential barrier on Al/SiCA-SiC junction. Moreover, the observations made using HAXPES, and transmission electron microscopy, suggest that the modification of the outer-most surface layer plays an essential role in the ohmic contact formation. These results provide insights on the ohmic contact formation mechanism for wide-band-gap semiconductor materials.
关键词： 4H-SiC,silicidation-less ohmic contact,Ohmic contacts,silicon-cap annealing,Hard X-ray photoelectron spectroscopy
更新于2025-09-19 17:13:59
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A robust SiC nanoarray blue-light photodetector
摘要： Silicon carbide (SiC) is recognized as one of the most important candidates of third generation semiconductors with totally superior physical/chemical properties and exciting applications in opto/electronic devices. In the present work, we report the exploration of high-performance blue-light photodetectors on both rigid and flexible substrates by using SiC nanoarrays, which are aligned by dielectrophoresis. The rise and decay times of the photodetector assembled on a rigid (i.e., SiO2/Si) substrate are B0.39 and 0.56 s, respectively, with an external quantum e?ciency of 3394%, which suggested that the SiC nanoarray photodetector has high sensitivity, fast responsivity and excellent reproducibility to light irradiation with a wavelength of 445 nm. Meanwhile, 73% of the maximum photocurrent response can be maintained after 6 months. Furthermore, the as-constructed flexible photodetector based on the polyethylene terepthalate (PET) substrate was highly stable against repeated bending, demonstrating that the as-constructed SiC photodetector was robust with high flexibility and electrical stability.
关键词： SiC,nanoarrays,dielectrophoresis,flexible substrate,blue-light photodetector
更新于2025-09-19 17:13:59
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Synthesis of β-SiC powders by the carbothermal reduction of porous SiO2–C hybrid precursors with controlled surface area
摘要： SiO2–C precursors with various surface areas were derived from tetraethyl orthosilicate and phenolic resin as Si and C sources, respectively, by a modi?ed sol–gel process using the in situ precipitation of phenol resin in a prepared wet gel. The surface area of the SiO2–C precursors was varied from 20 to 175 m2/g by changing the C/Si molar ratio in the preform. β-SiC powders were synthesized using carbothermal reduction in vacuum at the temperature range of 1200–1600 °C. The e?ects of the temperature and heat treatment time as well as that of the surface area of the preform on the formation of β-SiC powders were studied. It was determined that the formation of β-SiC started at 1200 °C and was considerably promoted as the heat treatment temperature and time further increased during the carbothermal reduction of SiO2–C preforms with high surface area. When high surface area SiO2–C preforms were used, highly crystalline SiC powders were synthesized at 1600 °C in vacuum with a high yield of 85%.
关键词： Meso-macro porous,Carbotermal reduction,Sol–gel method,SiC,Synthesis
更新于2025-09-16 10:30:52