研究目的
To demonstrate high power AlGaN LEDs grown on SiC with high light-extraction efficiency (LEE) and low threading dislocation density, addressing the limitations of UV-C AlGaN LEDs for disinfection applications.
研究成果
The research successfully demonstrated high-power AlGaN LEDs grown on SiC substrates with high light-extraction efficiency and low threading dislocation density. The study highlights the potential of UV LEDs grown on SiC substrates for large-area, high-brightness, and high-power applications, with an estimated light extraction efficiency of 33% without encapsulation.
研究不足
The study acknowledges the challenges in achieving low threading dislocation density and the need for further optimization in the internal quantum efficiency (IQE) of the active region. The non-ohmic n-contact resistance and the high resistivity of n-AlGaN layers are identified as areas requiring improvement.
1：Experimental Design and Method Selection:
The study employed a crack-free AlN buffer layer with low threading dislocation density and a technique to fabricate thin-film UV LEDs by removing the SiC substrate with a highly selective SF6 etch.
2：Sample Selection and Data Sources:
AlGaN LEDs were grown on the Si-face of a c-plane (0001) 6H-SiC 2” n-type substrate.
3：List of Experimental Equipment and Materials:
MOCVD precursors (ammonia, trimethylgallium, and trimethylaluminum), disilane and bis(cyclopentadienyl) magnesium for doping, and various measurement tools like reflectometer, UV-Visible spectrometer, and spectroscopic ellipsometry.
4：Experimental Procedures and Operational Workflow:
The process included substrate pretreatment, AlN buffer layer growth, LED structure growth, and fabrication into thin-film flip-chip UV LEDs.
5：Data Analysis Methods:
The performance of the LEDs was evaluated through power output measurements, external quantum efficiency calculations, and light extraction efficiency estimations.
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