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Structural and optical studies on PVA capped SnS films grown by chemical bath deposition for solar cell application
摘要： Tin monosulphide (SnS) thin films capped by PVA have been successfully deposited on glass substrates for cost effective photovoltaic device applications by a simple and low-cost wet chemical process, chemical bath deposition (CBD) at different bath temperatures varying in the range, 50–80 °C. X–ray diffraction analysis showed that the deposited films were polycrystalline in nature, showing orthorhombic structure with an intense peak corresponding to (040) plane of SnS. These observations were further confirmed by Raman analysis. FTIR spectra showed the absorption bands which corresponds to PVA in addition to SnS. The scanning electron microscopy and atomic force microscopy studies revealed that the deposited SnS films were uniform and nanostructured with an average particle size of 4.9 to 7.6 nm. The optical investigations showed that the layers were highly absorbing with the optical absorption coefficient ~105 cm–1. A decrease in optical band gap from 1.92 to 1.55 eV with an increase of bath temperature was observed. The observed band gap values were higher than the bulk value of 1.3 eV, which might be due to quantum confinement effect. The optical band gap values were also used to calculate particle size and the results are discussed.
关键词： structural properties,optical properties,SnS thin films,polyvinyl alcohol,capping agent,chemical bath deposition
更新于2025-11-21 11:18:25
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Synthesis and annealing process of ultra-large SnS nanosheets for FTO/SnS/CdS/Pt photocathode
摘要： SnS has been widely used in photoelectric devices due to its special band gap of 1.2–1.5 eV. Here, we reported on the fabrication of SnS nanosheets and the effect of synthesis condition together with heat treatment on its physical properties. The obtained band gap of the SnS nanosheets is in the rage of 1.37–1.41 eV. It was found that the photo-current density of a thin film comprised of SnS nanosheets could be enhanced significantly by annealing treatment. The maximum photo-current density of the stack structure of FTO/SnS/CdS/Pt was high as 389.5 μA cm-2, rendering its potential application in high efficiency solar hydrogen production.
关键词： SnS nanosheets,Water splitting,Photoelectrochemical properties
更新于2025-09-23 15:23:52
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Chemical bath deposition of SnS:In thin films for Pt/CdS/SnS:In/Mo photocathode
摘要： SnS:In thin ?lms have been deposited on Mo substrates by chemical bath deposition method in acidic solution. The in?uences of di?erent In-doped concentrations on the morphological, structural, optical properties and phase purities of SnS thin ?lms have been investigated. Many sheet-like particles exist in the deposited SnS:In thin ?lms. The doping of indium will decrease the thicknesses of the deposited thin ?lms. The studies of photo-electrochemical (PEC) properties of SnS:In (In,10 at.%) thin ?lms indicate that their PEC properties are enhanced by the annealing process. The fabrication of Pt/CdS/annealed SnS:In/Mo photocathode can further enhance the photo-current density to 0.790 mA·cm?2 at ?0.4 V.
关键词： Thin ?lms,Chemical bath deposition,SnS,Photocurrent
更新于2025-09-23 15:21:21
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Beyond 10% efficient Cu2ZnSn(S,Se)4 solar cells: Effects of the introduction of SnS powder during selenization process
摘要： Cu2ZnSn(S,Se)4 (CZTSSe) has received considerable attention as the promising absorber for thin-film solar cells. For traditional selenization process, the issues of Sn-loss, lower S/(S t Se) ratio, and unsuitable back contact interface extensively exist in CZTSSe solar cells. In present work, SnSe and SnS powder is introduced during selenization process, respectively. The effects of SnSe and SnS powder on CZTSSe films and the Mo/CZTSSe interface have been comprehensively studied. We discover that SnS not only can provide the Sn-contained vapor in selenization process but also offer S-vapor. Due to the presence of Sn-contained vapor, the number of voids in the CZTSSe absorber and Mo/CZTSSe interface decreases remarkably and the Sn-loss is effectively suppressed. The thickness of Mo(S,Se)2 layer is significantly reduced, and the S/(S t Se) ratio in CZTSSe bulk obviously increases owing to the presence of S-vapor. As a consequence, the open-circuit voltage and fill factor of the solar cell significantly increase and the CZTSSe solar cell with efficiency of 10.07% (total area) is successfully fabricated.
关键词： Cu2ZnSn(S,Se)4 solar cells,SnS powder,Sn-loss,Mo(S,Se)2 layer,S/(StSe) ratio
更新于2025-09-23 15:21:01
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Electrochemical and optical characterization of a multielectrochromic copolymer based on 3,4-ethylenedioxythiophene and functionalized dithienylpyrrole derivative
摘要： A novel conjugated copolymer, namely poly(3,4-ethylenedioxythiophene-co-1-(3,5-bis(trifluoromethyl)phenyl)-2,5-di(thiophen-2-yl)-1H-pyrrole) (P(EDOT-co-1)) was synthesized via electropolymerization method from a mixture of 3,4-ethylenedioxythiophene and 1-(3,5-bis(trifluoromethyl)phenyl)-2,5-di(thiophen-2-yl)-1H-pyrrole comonomers. The corresponding copolymer has an optical band gap of 1.7 eV and 41% optical contrast at 525 nm with a coloration efficiency of 258 cm2/C and 1.4 s switching time. The copolymer has a multi-electrochromic behavior: It has dark purple, purple, gray, green and cyan colors at different oxidation states. Electrochemical stability of P(EDOT-co-1) copolymer was also investigated and it was observed that the copolymer retained 86% of its stability under ambient conditions in the presence of oxygen (without purging the electrolyte solution with any inert gas) according to the current density and 83% according to the deposited charge even after 1000 redox cycles.
关键词： Copolymerization,SNS,3,4-Ethylenedioxythiophene,EDOT,Multielectrochromism, dithienylpyrrole,Electropolymerization,1,4-di(thiophen-2-yl)butane-1,4-dione,3,5-bis(trifluoromethyl)benzenamine
更新于2025-09-23 15:21:01
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Graphene/TiO2 nanocomposite electrodes sensitized with tin sulfide quantum dots for energy issues
摘要： In this work, graphene (Gr)/TiO2 nanocomposite electrodes sensitized with tin sulfide quantum dots (SnS QDs) for energy issues have been investigated. Different sizes of SnS QDs as non-toxic and earth-abundant semi-conducting materials are synthesized onto Gr/TiO2 nanocomposite electrodes using successive ionic layer adsorption and reaction (SILAR) technique for “n” cycles (n: 1 to 8). The structural properties of the prepared SnS (n) QDs photoanodes are studied using an X-ray diffractometer. The XRD measurements ensure the formation of the crystalline structure of orthorhombic SnS QDs. The optical properties of the synthesized SnS(n) QDs photoanodes are characterized using a UV–visible spectrophotometer. The estimated direct (indirect) energy band gap (Eg) of the prepared SnS(n) photoanodes is tuned from 2.36 (1.57) eV to 1.76 (1.30) eV by controlling the number of SILAR cycles from 1 to 8. The photovoltaic performance of the assembled SnS(n) quantum dots sensitized solar cells (QDSSCs) has been studied under a solar power illumination of AM1.5 conditions. The optimal photovoltaic performance of the assembled SnS(n) QDSSCs is achieved at 6 SILAR deposition cycles. As compared with previous studies, enhancement of 48% in the energy conversion efficiency η has been achieved due to the active Gr incorporation. SnS(n) QDSSCs shows high reproducibility and sensitivity undercutting ON-OFF the solar illumination. Gr plays the role of kids slide for the photo-generated electrons and facilitates their transportation.
关键词： Graphene/TiO2,Reproducibility of QDSSCs,Recombination suppression,Tuning band gap,SnS solar Cell
更新于2025-09-23 15:19:57
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Effect of RF Power on the Properties of Sputtered-CuS Thin Films for Photovoltaic Applications
摘要： Copper sulfide (CuS) thin films were deposited on a glass substrate at room temperature using the radio-frequency (RF) magnetron-sputtering method at RF powers in the range of 40–100 W, and the structural and optical properties of the CuS thin film were investigated. The CuS thin films fabricated at varying deposition powers all exhibited hexagonal crystalline structures and preferred growth orientation of the (110) plane. Raman spectra revealed a primary sharp and intense peak at the 474 cm?1 frequency, and a relatively wide peak was found at 265 cm?1 frequency. In the CuS thin film deposited at an RF power of 40 W, relatively small dense particles with small void spacing formed a smooth thin-film surface. As the power increased, it was observed that grain size and grain-boundary spacing increased in order. The binding energy peaks of Cu 2p3/2 and Cu 2p1/2 were observed at 932.1 and 952.0 eV, respectively. Regardless of deposition power, the difference in the Cu2+ state binding energies for all the CuS thin films was equivalent at 19.9 eV. We observed the binding energy peaks of S 2p3/2 and S 2p1/2 corresponding to the S2? state at 162.2 and 163.2 eV, respectively. The transmittance and band-gap energy in the visible spectral range showed decreasing trends as deposition power increased. For the CuS/tin sulfide (SnS) absorber-layer-based solar cell (glass/Mo/absorber(CuS/SnS)/cadmium sulfide (CdS)/intrinsic zinc oxide (i-ZnO)/indium tin oxide (ITO)/aluminum (Al)) with a stacked structure of SnS thin films on top of the CuS layer deposited at 100 W RF power, an open-circuit voltage (Voc) of 115 mA, short circuit current density (Jsc) of 9.81 mA/cm2, fill factor (FF) of 35%, and highest power conversion efficiency (PCE) of 0.39% were recorded.
关键词： covellite,CuS/SnS absorber,CuS thin film,solar cell,RF magnetron sputtering
更新于2025-09-23 15:19:57
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Electrodeposition of Single Phase SnS Thin Films: Effect of Electrolytic Bath Temperature on the Final Film Properties
摘要： In this article, the electrodeposition of single-phase tin monosulfide (SnS) films at different electrolytic bath temperatures is studied. The electrodeposition was carried out potentiostaticaly onto transparent conductive substrates (fluorine-doped tin oxide, and indium tin oxide on a glass substrate) from an acidic solution of SnSO4 and Na2S2O3 as tin and sulfur precursors, respectively. The films were characterized through different techniques: field-emission scanning electron microscopy, energy dispersive X-ray analyses, X-ray diffraction measurements, profilometry, Raman spectra, UV-vis measurements, electrochemical impedance spectroscopy and linear sweep photovoltammetry. The films obtained were stoichiometric and no other phases different from SnS were evidenced. A change in the morphology from cubic-like to sheet-like was observed with an increase of bath temperature, which was reflected in the texture coefficient obtained from X-ray diffraction analyses. The bandgap of the films was obtained using a direct absorption edge in the Tauc plots. A decreasing bandgap with electrodeposition temperature was observed, which is attributed to an improvement in the crystallinity of the films. Mott-Schottky plots and linear sweep photovoltammetry measurements confirmed that the films are p-type semiconductors. An increase in the photocurrent of the photoelectrodes was observed with the electrolytic bath temperature, which is attributed to the change of SnS morphology with the electrodeposition temperature.
关键词： bath temperature,morphology,Electrodeposition,photoelectrochemical properties,bandgap,SnS thin films
更新于2025-09-19 17:15:36
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Optical and structural-chemistry of SnS nanocrystals prepared by thermal decomposition of bis(N-di-isopropyl-N-octyl dithiocarbamato)tin(II) complex for promising materials in solar cell applications
摘要： Mixed ligand precursor complex bis(N-di-isopropyl-N-octyl dithiocarbamato)tin(II) complex was synthesized from its respective dithiocarbamate ligands, characterized and thermalized through thermogravimetric analysis to yield tin sulfide (SnS) nanocrystals. The thermal decomposition pattern was recorded as a function of the required temperature for the formation of the SnS nanocrystals at 360 °C. The SnS nanocrystals were characterized using optical, vibrational, structural and morphological analyses instruments. The obtained orthorhombic phase SnS nanocrystals showed indirect and direct optical energy band gaps close to the 1.5 eV of the bulk SnS.
关键词： SnS nanocrystals,Thermal decomposition pattern,Mixed ligand precursor complex,Orthorhombic phase,Thermogravimetric analysis
更新于2025-09-19 17:13:59
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Effect of working pressure on the properties of RF sputtered SnS thin films and photovoltaic performance of SnS-based solar cells
摘要： Tin sulfide (SnS) thin films were deposited with a single SnS target by radio frequency magnetron sputtering while varying the working pressure (0.6 Pa to 2.6 Pa), and the structural, chemical, electricelectrical and optical properties of the SnS thin films were investigated. X-ray diffraction results showed that all the SnS thin films had a (111) plane preferred growth orientation, and X-ray photoelectron spectroscopy verified that a SnS thin film was grown with an orthorhombic crystal structure, having the binding energy of 324.5 eV. Due to a long wavelength shift in the transmittance spectrum, the optical band gap decreased from 1.56 eV to 1.47 eV. A SnS-based conventional structure solar cell (Al/ITO/i-ZnO/CdS/SnS/Mo/SLG), prepared with a SnS absorption layer and deposited at a working pressure of 2.0 Pa, achieves the highest power conversion efficiency of 0.58%. It is confirmed that this result reveal to very high efficiency compared to other reports with conventional structure.
关键词： thin films,Tin sulfide,radio frequency magnetron sputtering,single target,SnS based solar cells,working pressure
更新于2025-09-19 17:13:59