研究目的
Investigating the influence of different In-doped concentrations on the morphological, structural, optical properties and phase purities of SnS thin films deposited on Mo substrates by chemical bath deposition method in acidic solution, and their photo-electrochemical (PEC) properties.
研究成果
Indium doping decreased the thicknesses of SnS thin films and improved their PEC properties. The best PEC property was achieved at the annealing temperature of 200 °C. The fabrication of Pt/CdS/annealed SnS:In/Mo photocathode further enhanced the photo-current density to 0.790 mA·cm?2 at ?0.4 V, indicating its great potential in PEC splitting water.
研究不足
The study is limited to the effects of In doping on SnS thin films deposited by chemical bath deposition in acidic solution. The PEC properties were only measured in 0.5 M Na2SO4 under illumination of AM 1.5 G.
1：Experimental Design and Method Selection:
Chemical bath deposition method was used to deposit SnS:In thin films on Mo substrates in acidic solution. The influences of different In-doped concentrations on the films were investigated.
2：Sample Selection and Data Sources:
Mo foils were used as substrates. SnCl2·2H2O, thioacetamide (TAA), and InCl3 were dissolved in distilled water to prepare the deposition solution.
3：List of Experimental Equipment and Materials:
SEM, XRD, Raman spectra, XPS, UV-Vis diffuse reflection spectra, and CHI660B electrochemical workstation were used for characterization.
4：Experimental Procedures and Operational Workflow:
The pH level of the solution was adjusted to
5：7 by adding diluted H2SOSnS:
In thin films were deposited at 80 °C for 120 mins with magnetic stirring. The films were annealed under vacuum at different temperatures.
6：Data Analysis Methods:
The morphological, structural, optical properties, and PEC properties of the films were analyzed using SEM, XRD, Raman spectra, XPS, UV-Vis diffuse reflection spectra, and electrochemical workstation.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
