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General Synthesis of Ordered Mesoporous Rare-Earth Orthovanadate Thin Films and Their Use as Photocatalysts and Phosphors for Lighting Applications
摘要： Herein, the block copolymer templating sol-gel synthesis of a novel class of ternary oxide nanomaterials is reported. NdVO4, EuVO4, GdVO4, DyVO4, YVO4, and TmVO4 have been prepared as open mesoporous films by the dip-coating method using hydrated rare-earth nitrate salt precursors along with vanadium oxytrichloride. All materials crystallize in the tetragonal ZrSiO4-type structure with space-group I41/amd. Short-term treatment at 550 °C is found sufficient to initiate crystallization. Characterization via X-ray and electron diffraction, Raman and X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry confirms the single-phase nature and uniformity of the different orthovanadates with tailorable crystallite sizes. The integrated results from electron and atomic force microscopy, Kr-physisorption as well as in-situ and ex-situ synchrotron-based small-angle X-ray scattering reveal that the porosity persists throughout the thickness of films and the mesoscopic ordering is retained even after heating in air at 700 °C. Photobleaching experiments indicate that the sol-gel derived materials, showing an indirect band gap transition at (3.8±0.1) eV, exhibit good photocatalytic properties—the activity is highly superior to that of bulk films of the same nominal composition. Moreover, when doping GdVO4, YVO4, and solid solution GdVO4-YVO4 with trivalent rare-earth ions such as Eu3+, Dy3+, Er3+, or Tm3+ ions, the films hold promise as phosphors for lighting applications, which might pave the way toward development of (3-dimensional) intricate nanocomposites with unprecedented functionalities.
关键词： Block copolymer templating,ternary metal oxide nanostructure,photocatalyst,phosphor,sol-gel chemistry
更新于2025-11-21 10:59:37
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Combustion synthesis of nontoxic water-induced InYO thin film and application in thin film transistor
摘要： In the work, novel indium yttrium oxide (InYO) thin ?lms are prepared by an environmentally friendly aqueous solution process. Y element is added to suppress the generation of oxygen vacancies. The e?ect of Y doping on the performance and stability of nontoxic water-induced InYO thin ?lm transistors (TFTs) is ?rstly examined. With the increase of Y doping contents, o?-state current is decreased and mobility decreases from 15.8 to 11.7 cm2 V?1 s?1. Furthermore, the stability under positive bias stress is also obviously improved. The device with 2 mol% Y element shows an optimized electrical performance and good stability, including mobility of 12.8 cm2/V s, threshold voltage of 1.4 V, subthreshold swing of 0.33 V/decade and threshold voltage shift of 2.31 V under positive voltage stress of 5 V for 10,000 s. The performance improvement is attributed to the decrease of oxygen vacancies and the decline of interface trap density by Y addition.
关键词： Thin ?lms,Amorphous materials,Electrical properties,Sol-gel chemistry
更新于2025-09-23 15:23:52