1：Experimental Design and Method Selection:

The study uses solution combustion synthesis with aqueous precursors to fabricate InYO thin films. The rationale is to create environmentally friendly, low-cost TFTs with reduced oxygen vacancies and improved stability. Theoretical models include equations for threshold voltage, mobility, subthreshold swing, and interface trap density calculations.

2：Sample Selection and Data Sources:

Precursor solutions are prepared with indium nitrate hydrate and yttrium nitrate hydrate dissolved in deionized water, with Y/In molar ratios of 0, 1, 2, 4, and 6 mol%. Data is collected from fabricated TFT devices.

3：List of Experimental Equipment and Materials:

Equipment includes a spin coater, hot plate, furnace, Agilent 4155C semiconductor characterization system, UV/visible spectrometer, XPS (Thermo-ESCALAB 250Xi), GIXRD, AFM, and LCR meter (Agilent E4980A). Materials include In(NO3)3·xH2O, Y(NO3)3·xH2O, deionized water, ALD Al2O3 gate dielectric, and source/drain electrodes patterned with a stainless steel mask.

4：Experimental Procedures and Operational Workflow:

Precursor solutions are stirred for 2 hours, spin-coated on ALD Al2O3 films at 6000 rpm for 30 seconds, dried at 120°C for 10 minutes, and annealed at 350°C for 2 hours. Source and drain electrodes are deposited, and electrical and material characterizations are performed.

5：Data Analysis Methods:

Data is analyzed using equations for mobility, threshold voltage, subthreshold swing, and interface trap density. Statistical analysis includes fitting to stretched exponential decay for bias stress stability.