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Effect of substrate bias and substrate/plasma generator distance on properties of a-C:H:SiOx films synthesized by PACVD
摘要： In this paper the a-C:H:SiOx films were synthesized on silicon (100) and glass substrates by plasma-assisted chemical vapor deposition combined with pulsed bipolar substrate bias from mixtures of argon and polyphenylmethylsiloxane vapor. The process of a-C:H:SiOx films formation was investigated by controlling processing conditions such as amplitude of negative pulse of substrate bias and the distance between the substrate and plasma generator. Physico-mechanical characteristics of a-C:H:SiOx films were studied by the nanoindentation technique, atomic force microscopy, Fourier transform infrared and Raman spectroscopy. The contact angle and surface free energy were determined by the sessile drop method using couple liquids (water and glycerin). It was found that the films’ properties are interrelated with the density of the ion current on the substrate, which was measured using a guarded planar probe. The obtained results show that film prepared at the smaller substrate/plasma generator distance and optimal substrate biasing has a higher content of sp3 bonded carbon and, accordingly, has higher hardness, Young's modulus and resistance to plastic deformation. At the same time the a-C:H:SiOx films show large hydrophobicity with a contact angle for water of about 91° and small total surface free energy of about 17.9 mN/m.
关键词： a-C:H:SiOx films,PACVD,Raman Spectroscopy,Substrate bias,Fourier Transform Infrared Spectroscopy,Wettability
更新于2025-09-23 15:21:21
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Substrate Bias Effect on E-Mode GaN-on-Si HEMT Cos<inf>s</inf> Losses
摘要： Previous work found large COSS losses in GaN-on-Si HEMTs used in soft-switched, MHz-frequency power converters. Here, we use a back-gate bias between the source and Si substrate to investigate the capacitance characteristics of commercially-available GaN HEMTs. The small-signal capacitance is reduced significantly – up to 2× for a 650 V HEMT and 4× for a 100 V HEMT – indicating that the drain-substrate capacitance is a significant portion of the total output capacitance. This portion of the capacitance appears responsible for trapping-detrapping with time constants on the order of seconds. We verify this by testing the 100 V GaN HEMT in the Sawyer-Tower circuit with negative substrate bias, finding that COSS losses are reduced by up to 30% compared to the shorted substrate condition.
关键词： Sawyer-Tower circuit,COSS losses,capacitance characteristics,GaN-on-Si HEMTs,substrate bias
更新于2025-09-04 15:30:14