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Irradiation effects of swift heavy ions on palladium films deposited on 6H-SiC substrate
摘要： The irradiation effect of swift heavy ions on palladium (Pd) films deposited on 6H-SiC was investigated. The samples were irradiated by Xe26+ ions with the energy of 167 MeV at fluences of 1 × 1013 cm?2 and 3 × 1014 cm?2 at room temperature. Phase identification, residual stress and surface morphology were investigated with X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD results showed that the as-deposited sample was composed of Pd and SiC with no evidence of a reaction between Pd and SiC. No reaction was observed for the lower irradiation fluence, only an increase in the Pd peak intensities was observed indicating improvement in the crystallinity of the material. A reaction between Pd and SiC forming PdSi and Pd2Si was observed after irradiation at a fluence of 3 × 1014 cm?2. The stress measurements indicated that the films were having tensile and biaxial stress not exceeding 200 MPa. A decrease in stress values was observed with an increase in irradiation fluence. The surface morphology of the as-deposited was flat and composed of small granules. There was an increase in granule sizes due to irradiation at 1 × 1013 cm?2. Irradiating at 3 × 1014 cm?2 caused grain agglomeration and clustering.
关键词： Palladium,SiC,Swift heavy ions,Stress,Irradiation
更新于2025-09-19 17:15:36
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Light-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions
摘要： Germanium suboxide films and GeO/SiO2 multilayer heterostructures deposited onto Si(001) substrates using evaporation in high vacuum were modified using irradiation of 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm?2. According to Raman spectroscopy data, the swift heavy ion irradiation does not lead to the expected decomposition of germanium suboxide in germanium nanoclusters and GeO2. Infrared absorption spectroscopy measurements show that under irradiation the GeO/SiO2 layers were intermixed with formation of Ge-O-Si bonds. We report strong photoluminescence in the visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. Moreover, a new infrared luminescence band (~0.8 eV) was observed in irradiated structures, which can be related to defects or defects complexes in GexSiyO2 glass.
关键词： swift heavy ions,Ge oxides,GexSiyO2 glasses,Luminescence,defects
更新于2025-09-10 09:29:36
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Latent tracks in bulk yttrium-iron garnet crystals irradiated with low and high velocity krypton and xenon ions
摘要： Bulk yttrium-iron garnet (YIG) single crystals have been irradiated with swift Kr and Xe ions having energies from 0.4 to 22.8 MeV/u and electronic stopping powers from 8.9 to 28.9 keV/nm near the irradiated surface. Transmission electron microscopy (TEM) has been used for direct observation of non-overlapping amorphous latent tracks in the near surface region of the irradiated bulk YIG crystals. The amorphous track radii observed in this work have been compared with previously reported data from direct and indirect measurements. It was found that the thickness of the sample subjected to swift heavy ion irradiation does not significantly affect the resulting amorphous track size observed by TEM in YIG. The results also support previously observed consistency between direct TEM and indirect Rutherford backscattering in channelling mode (RBS/C) and Mossbauer spectroscopy (MS) methods for amorphous track evaluation in YIG when electronic stopping power is greater than ～13 keV/nm, which is sufficient to create cylindrical amorphous tracks by high velocity ions (E > 10 MeV/u). Indirect methods provide underestimated values compared to TEM when the electronic stopping power is below ～13 keV/nm, for which discrete amorphous tracks are supposed to be formed by high velocity ions.
关键词： Transmission electron microscopy,Latent tracks,Radiation damage,Yttrium-iron garnet,Swift heavy ions
更新于2025-09-09 09:28:46