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oe1(光电查) - 科学论文

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  • Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

    摘要： The impact of the manufacturing process on the radiation induced degradation effects observed in CMOS image sensors at the MGy total ionizing dose levels is investigated. Moreover, the vulnerability of the partially pinned photodiodes at moderate to high total ionizing doses is evaluated for the first time to our knowledge. It is shown that the 3T standard partially pinned photodiode has the lowest dark current before irradiation, but its dark current increases to ~1 pA at 10 kGy(SiO2). Beyond 10 kGy(SiO2), the pixel functionality is lost. The comparison between several CIS technologies points out that the manufacturing process impacts the two main radiation induced degradations: the threshold voltage shift of the readout chain MOSFETs and the dark current increase. For all the tested technologies, 1.8V MOSFETs exhibit the lower threshold voltage shift and the N MOSFETs are the most radiation tolerant. Among all the tested devices, 1.8V sensors achieve the best dark current performance. Several radiation-hard-by-design solutions are evaluated at MGy level to improve further the understanding of CIS radiation hardening at extreme total ionizing dose.

    关键词： Gate Overlap,Radiation Effects,Drain,CMOS Image sensors,Partially Pinned Photodiode,Dark Current,TID,Threshold shift,RHBD

    更新于2025-09-23 15:21:01

  • Dose and Single Event Effects on a Color CMOS Camera for Space Exploration

    摘要： This paper focuses on the radiation-induced dose and single event effects on a color CMOS camera designed for space missions. Gamma-ray and protons are used to evaluate the tolerance against cumulative dose effects. The dark current of the image sensor is the main parameter impacted by dose effects. Heavy ions testing is performed to evaluate single event effects. SEU, SEFI and SEL have been observed and mitigation techniques were proposed for specific space missions.

    关键词： Total Ionizing Dose (TID),Microlens,CMOS Image Sensor (CIS),Single Event Effects (SEE),Displacement Damage Dose (DDD),Pinned Photodiode (PPD),Active Pixel Sensor (APS),Monolithic Active Pixel Sensor (MAPS),Camera,Color filter,Random Telegraph Signal (RTS)

    更新于2025-09-04 15:30:14