摘要： The impact of the manufacturing process on the radiation induced degradation effects observed in CMOS image sensors at the MGy total ionizing dose levels is investigated. Moreover, the vulnerability of the partially pinned photodiodes at moderate to high total ionizing doses is evaluated for the first time to our knowledge. It is shown that the 3T standard partially pinned photodiode has the lowest dark current before irradiation, but its dark current increases to ~1 pA at 10 kGy(SiO2). Beyond 10 kGy(SiO2), the pixel functionality is lost. The comparison between several CIS technologies points out that the manufacturing process impacts the two main radiation induced degradations: the threshold voltage shift of the readout chain MOSFETs and the dark current increase. For all the tested technologies, 1.8V MOSFETs exhibit the lower threshold voltage shift and the N MOSFETs are the most radiation tolerant. Among all the tested devices, 1.8V sensors achieve the best dark current performance. Several radiation-hard-by-design solutions are evaluated at MGy level to improve further the understanding of CIS radiation hardening at extreme total ionizing dose.