研究目的
Investigating the performance of separate absorption, charge, and multiplication (SACM) avalanche photodiodes (APDs) in the AlxIn1-xAsySb1-y material system for 2-μm detection.
研究成果
The AlxIn1-xAsySb1-y SACM APD shows low excess noise (k ≈ 0.01) and dark current, with gain M > 60 at room temperature, making it a promising candidate for high-performance mid-infrared APDs.
研究不足
The study demonstrates promising results but does not explore the full potential operational temperature range or compare with all existing technologies in depth.
1：Experimental Design and Method Selection:
The study focuses on the design and fabrication of SACM APDs using the AlxIn1-xAsySb1-y material system. The methodology includes molecular beam epitaxy for material growth and standard photolithography techniques for device fabrication.
2：Sample Selection and Data Sources:
AlxIn1-xAsySb1-y epitaxial layers with varying compositions were grown on n-type Te-doped GaSb substrates. Devices were characterized under 2-μm laser illumination.
3：List of Experimental Equipment and Materials:
Equipment includes a calibrated Agilent 8973 noise figure analyzer, temperature-stabilized 2-μm laser, and electron-beam evaporation system for Ti/Au contacts.
4：Experimental Procedures and Operational Workflow:
Circular mesas were defined and etched, followed by passivation and contact deposition. Excess noise and dark current were measured under controlled conditions.
5：Data Analysis Methods:
The multiplication gain at punch-through was determined by fitting measured excess noise to photocurrent. Dark current density was characterized as a function of temperature.
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