- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Surface Planarization of Low-Temperature Flowable Silicon Oxide for Atomic Layer Deposition Al <sub/>2</sub> O <sub/>3</sub> Thin Film Encapsulation
摘要： In this research, a flowable chemical vapor deposition (FCVD) process was developed to planarize particle-scattered surfaces for thin film encapsulation by atomic layer deposition (ALD). Nanometer-thick ALD layers are known to have good barrier properties owing to the conformal deposition of the films and their high density, but those barrier properties are vulnerable to degradation because of surface particles on the substrates. In this study, FCVD silicon oxide layer was applied to particle-scattered surfaces as a planarization interlayer. Flowable silicon oxide thin films were deposited with tetrabutoxysilane and O2 in an inductively coupled plasmas reactor. The chemical bonding structure of the flowable silicon oxide was verified with Fourier transform infrared spectroscopy. To confirm the planarization effect, particles 2 μm in diameter were intentionally spread on the substrates by electrospray processing and nanometer-thick Al2O3 layers were deposited on top of the planarization interlayers. With the flowable silicon oxide interlayer and the same particle density on flexible substrates, the water vapor transmission rate was reduced to 1.2 × 10?3 g/(m2 · day) from 2.0 × 10?3 g/(m2 · day). The flowable silicon oxide layers are thus demonstrated to be effective interlayers to reduce the influence of particle contamination for ALD barrier films.
关键词： Thin Film Encapsulation,Planarization Effect,Flowable Chemical Vapor Deposition
更新于2025-09-23 15:22:29
-
Control of 1-dimensionally structured tungsten oxide thin films by precursor feed rate modulation in flame vapor deposition
摘要： With the constant tungsten wire feed rate of 4 μm/s, the diameter of nanostructures increases with time and the multi-shell nanostructure and/or branched nanostructure eventually appears and grows. As the diameter and length of 1-D nanostructures increase with time, 1-D nanostructures are easily converted into multi-shell and/or branched nanostructures. The tungsten oxide vapor concentration and flame temperature also affect significantly this conversion of 1-D nanostructures. The increase of tungsten wire feed rate with time accelerated the appearance and growth of multi-shell and/or branched nanostructure, while the decrease of tungsten wire feed rate with time could help prepare the 1-D nanostructured WOX thin film without the growth of multi-shell and/or branched nanostructure. By the modulation of tungsten wire feed rate with time, the thin film thicker than 5μm with single shell nanotube structure could be prepared with almost no increase of nanotube diameter. For the preparation of longer 1-D nanostructured WOX thin film, it is found that the smooth decrease of wire feed rate with time, not the abrupt decrease of feed rate, is required in FVD process to prevent the multi-shell structure growth. We demonstrated that various attractive nanostructures can be prepared quickly by just changing precursor feed rate in FVD process for the first time. The results of this study can provide the basis for many practical applications of FVD process to fast fabrication of several interesting nanostructures.
关键词： nanostructure control,tungsten oxide thin film,precursor feed rate,preparation of 1-D nanostructure,flame vapor deposition
更新于2025-09-23 15:22:29
-
Effect of copper doping on the crystallization behavior of TiSbTe for fast-speed phase change memory
摘要： In this study, Ti-Sb-Te (TST) alloy doped with Cu has been proposed to enhance the phase change and electrical properties of TST. The formation of Cu-Te bond was suggest to be responsible for the improved thermal stability of the Cu0.28(Ti0.09Sb0.38Te0.53)0.72 (Cu0.28TST) film. Cu0.28TST -based phase change memory cell can be triggered by a 5 ns electric pulse. Such fast speed was asscribed to its growth-dominated crystallization mechanism and the precipitation of Sb in the crystallization process. Furthermore, an endurance cycles up to 105 could be achieved in the memory cell.
关键词： nanocomposite,thermal stability,rapid transition,thin film
更新于2025-09-23 15:22:29
-
Analysis of current transport mechanisms in sol-gel grown Si/ZnO heterojunction diodes in high temperature environment
摘要： This paper analyzes the electrical parameters of Si/ZnO heterojunction diodes in the wide temperature range, i.e. from room temperature (298 K) to 573 K to study the electrical performance of the diode in very high temperature environment. In this work, sol-gel derived nanostructured ZnO thin film was deposited directly on p-Si substrate using spin coating technique. Electrical parameters, such as rectification ratio, reverse saturation current, ideality factor, barrier height, series resistance and activation energy are derived from current-voltage characteristics of the device, measured using semiconductor parameter analyzer in the temperature range of 298 K–573 K for bias voltage of ± 5 V. The ideality factor, barrier height and series resistance is derived as 2.66, 0.789 eV and 3554 Ω respectively at 298 K, whereas at 573 K these are modified as 1.58, 1.15 eV and 801 Ω respectively. The above-mentioned results indicate the presence of spatial barrier height inhomogeneities (BHI) in high temperature environment. Hence, we have included the Gaussian distribution of spatial BHI in our analysis to calculate the effective Richardson constant (RC). Before inclusion of spatial BHI, RC was 4.026 × 10^{-6} Acm^{-2}K^{-2}. However, after inclusion of spatial BHI, RC is modified to 29.14 Acm^{-2}K^{-2}, which is nearer to the theoretical value (32 Acm^{-2}K^{-2}). Therefore, this study indicates that our as-fabricated Si/ZnO heterojunction diodes can sustain their electrical behaviour in very high temperature environment also and they are suitable for high temperature electronic and optoelectronic application.
关键词： Current-voltage characteristics,Richardson constant,Trap-assisted tunneling,Spatial barrier inhomogeneities,Heterojunction diode,Semiconductor thin film
更新于2025-09-23 15:22:29
-
Pulsed laser deposition of BaCo0.4Fe0.4Zr0.1Y0.1O3-δ cathode for solid oxide fuel cells
摘要： We herein report a thin film deposition of perovskite BaCo0.4Fe0.4Zr0.1Y0.1O3-δ (BCFZY) by pulsed laser depositing (PLD) method for the use as a cathode in solid oxide fuel cells (SOFCs). The BCFZY powder was first synthesized via sol-gel method and pelletized to use it as a target in PLD system. As a result, the PLD-deposited thin film showed nano-porous morphology, preferred nano-architecture for cathode in SOFCs, without generating or transforming to secondary phase. The applicability of the thin film BCFZY to SOFC cathode was even confirmed by fabricating an SOFC with BCFZY cathode and operating it at 500 °C, where stable open-circuit voltage of 1.13 V was measured for an hour.
关键词： Pulsed laser deposition,Oxygen reduction reaction,thin film,Solid oxide fuel cells,BCFZY
更新于2025-09-23 15:22:29
-
Run-to-run control of PECVD systems: Application to a multiscale three-dimensional CFD model of silicon thin film deposition
摘要： Deposition of amorphous silicon thin films via plasma-enhanced chemical vapor deposition (PECVD) and batch-to-batch operation under run-to-run control of the associated chambered reactor are presented in this work using a recently developed multiscale, three-dimensional in space, computational fluid dynamics model. Macroscopic reactor scale behaviors are linked to the microscopic growth of amorphous silicon thin films using a dynamic boundary which is updated at each time step of the transient in-batch simulations. This novel workflow is distributed across 64 parallel computation nodes in order to reduce the significant computational demands of batch-to-batch operation and to allow for the application and evaluation in both radial and azimuthal directions across the wafer of a benchmark, run-to-run based control strategy. Using 10 successive batch deposition cycles, the exponentially weighted moving average algorithm, an industrial standard, is demonstrated to drive all wafer regions to within 1% of the desired thickness set-point in both radial and azimuthal directions across the wafer surface. This is the first demonstration of run-to-run control in reducing azimuthal film nonuniformity. Additionally, thin film uniformity is shown to be improved for poorly optimized PECVD geometries by manipulating the substrate temperature alone, without the need for re-tooling of the equipment.
关键词： thin film silicon solar cells,parallel computing,multiscale modeling,computational fluid dynamics,run-to-run control,thin film growth
更新于2025-09-23 15:21:21
-
Semiconducting Langmuir-Blodgett Films of Porphyrin Paddle-Wheel Frameworks for Photoelectric Conversion
摘要： Understanding the photocurrent transportation within porphyrin-containing metal-organic frameworks (PMOFs) will be a critical step for applying these materials in light-harvesting molecular devices in the future. Two copper porphyrin paddle-wheel frameworks (Cu-PPFs) were employed to study the influence of metal ions coordinated into the porphyrin ligands on conductivity and photoelectron transfer capability. To compare the electronic and optical properties of both materials, we prepared an ultra-thin film of each PPF via a Langmuir-Blodgett method. The resulting films exhibited uniform morphology and single-crystalline domains, in addition to photoelectric conversion capabilities. We confirmed both Cu-PPFs have semiconducting properties with an optical bandgap around 2.7 eV. The current density generated by both Cu-PPFs were studied through a mercury drop junction approach. We observed a slightly higher conductivity from the Cu-PPF film consisting of metalloporphyrins than the one without copper doping in the porphyrin centers. In addition, the copper ions coordinated porphyrins were found to be more favorable for facilitating photo-induced electron transfer from the Cu-PPF film to a conductive glass substrate. This work presents a new approach of combining thin film fabrication and electro-heterojunction measurement to study electron transfer within an ultra-thin film.
关键词： Metal-Organic Framework (MOF),2D Material,Langmuir-Blodgett Film,Self-Assembly,Semiconductor,Porphyrin Thin Film,Photoelectric Conversion
更新于2025-09-23 15:21:21
-
Crosslinked Organosilicon-Acrylate Copolymer Moisture Barrier Thin Film Fabricated by Initiated Chemical Vapor Deposition (iCVD)
摘要： Crosslinked organosilicon-acrylate copolymer thin film with desired chemical composition was successfully fabricated by a simply modified initiated chemical vapor deposition (iCVD) process. Unlike the conventional iCVD copolymerization process, in our novel process, comonomers were injected together as one gas phase into the polymerization chamber from miscible liquid comonomer mixture. 2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane (V4D4) and cyclohexyl methacrylate (CHMA) were used as the comonomers and tert-butyl peroxide was used as the initiator. From Fourier transform infrared (FTIR) spectra and solvent resistance test, we clearly confirmed that the crosslinked copolymer thin film with desired chemical composition could be obtained by controlling only the mixing ratio of liquid comonomers. It is expected that crosslinkable V4D4 organosilicon moiety provides hydrophobic moisture barrier property and CHMA acrylate moiety provides mechanical flexibility and better adhesion. We observed a certain level of moisture blocking capability of the copolymer thin film, implying potential application of the crosslinked organosilicon-acrylate copolymer thin film as flexible polymer buffer layer in organic/inorganic or metal oxide hybrid moisture barrier for flexible display or electronic devices.
关键词： moisture barrier property,copolymer thin film,initiated chemical vapor deposition (iCVD),cyclohexyl methacrylate (CHMA),2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane (V4D4)
更新于2025-09-23 15:21:21
-
Excited-state intramolecular proton transfer-based multifunctional solid-state emitter: a fluorescent platform with ‘write-erase-write’ function
摘要： The excited-state intramolecular proton transfer (ESIPT)-based molecular probes have drawn significant attention owing to their environment-sensitive fluorescence properties, large Stokes shift and emerged as building blocks for the development of molecular sensors and switches. However, most of the ESIPT-based fluorophores exhibit weak emission in the solid state limiting the scope of real-time applications. Addressing such issues, herein, we presented a C3-symmetric like molecular architecture employing a simple one-step Schiff base condensation between triaminoguanidinium chloride and 3,5-di-tert-butyl-2-hydroxybenzaldehyde (TGHB). The temperature-dependent fluorescence studies including at 77 K indicated the strong emission from the keto tautomer compared to that of the enol. The facile ESIPT in TGHB in the solid-state led to a remarkable enhancement of fluorescence quantum yield of 1600-times compared to that of the solution (λem = 545 nm) by restricting the intramolecular rotation and subsequently suppressing the nonradiative deactivation. The excited–state processes were further elucidated through time-resolved fluorescence measurements. TGHB exhibited turn on-off fluorescence upon exposure to acid /base vapor in the form of powder as well as transparent, free-standing thin film. A rewritable and erasable fluorescent platform was demonstrated using TGHB as molecular ink, which offers a potential testbed for performing multiple times ‘write-erase-write’ cycles. In addition, TGHB, possessing multiple binding sites (O and N donors) involving the central core of triaminoguanidinium cation, displayed selective turn-on fluorescence with Zn2+. The structure-property relationship revealed in the present study provides insight towards the development of novel cost-effective multifunctional materials promising for stimuli-responsive molecular switches.
关键词： molecular ink,thin film,ESIPT,multifunctional,solid-state emission,fluorescence switching
更新于2025-09-23 15:21:21
-
Energetic Ions during Plasma-Enhanced Atomic Layer Deposition and their Role in Tailoring Material Properties
摘要： Plasma-enhanced atomic layer deposition (PEALD) has obtained a prominent position in the synthesis of nanoscale films with precise growth control. Apart from the well-established contribution of highly reactive neutral radicals towards film growth in PEALD, the ions generated during plasma exposure can also play a significant role. In this work, we report on the measurements of ion energy and flux characteristics on grounded and biased substrates during plasma exposure to typically used for PEALD (O2, H2, N2) were measured in a commercial 200-mm remote inductively coupled plasma ALD system equipped with RF substrate biasing. IFEDFs were obtained using a gridded retarding field energy analyzer and the effect of varying ICP power, pressure and bias conditions on the ion energy and flux characteristics of the three reactive plasmas were investigated. The properties of three material examples – TiOx, HfNx and SiNx – deposited using these plasmas were investigated on the basis of the energy and flux parameters derived from IFEDFs. Material properties were analyzed in terms of the total ion energy dose delivered to a growing film in every ALD cycle, which is a product of the mean ion energy, total ion flux and plasma exposure time. The properties responded differently to the ion energy dose depending on whether it was controlled with RF substrate biasing where ion energy was enhanced, or without any biasing where plasma exposure time was increased. This indicated that material properties were influenced by whether or not ion energies exceeded energy barriers related to physical atom displacement or activation of ion-induced chemical reactions during PEALD. Furthermore, once ion energies were enhanced beyond these threshold barriers with RF substrate biasing, material properties became a function of both the enhanced ion energy and the duration for which the ion energy was enhanced during plasma exposure. These results have led to a better insight into the relation between energetic ions and the ensuing material properties, e.g., by providing energy maps of material properties in terms of the ion energy dose during PEALD. It serves to demonstrate how the measurement and control of ion energy and flux characteristics during PEALD can provide a platform for synthesizing nanoscale films with the desired material properties.
关键词： ion energy dose,ion energy flux,ion bombardment,atomic layer deposition,RFEA,thin film,substrate biasing,ion flux,ion energy control,retarding field energy analyzer,plasma ALD
更新于2025-09-23 15:21:21