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[IEEE 2019 International Conference on Electrical, Communication, and Computer Engineering (ICECCE) - Swat, Pakistan (2019.7.24-2019.7.25)] 2019 International Conference on Electrical, Communication, and Computer Engineering (ICECCE) - Optimization of Efficient Copper-Indium-Gallium Di-Selenide Solar Cell
摘要： The implementation of Copper Indium Gallium Selenide (CIGS) based solar cells have been simulated through software. A novel model FTO/ZnSe/CIGS/Mo/Substrate has been proposed by using a GPVDM. In this investigation, the main focus is to analyze low cost material and optimize it for better efficiency as compare to conventional CIGS solar cells. We observed in our findings that as the thickness of CIGS medium increases, the power conversion efficiency affectively increases. Also, different material testing was also formed for windows and buffer layer, where it has been observed that efficient model must have window layer Fluorine tin oxide (FTO) and buffer layer is Zinc selenide (ZnSe) with thickness of 30nm and 20nm, respectively. Moreover, solar cell with these topographies gives conversion efficiency of 18.51%.
关键词： Thin film Solar Cell,CIGS,GPVDM,low cost
更新于2025-09-16 10:30:52
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Nanosecond laser scribing for see‐through CIGS thin film solar cells
摘要： Building‐integrated photovoltaic (BIPV), especially in a semitransparent and/or see‐through configuration, has attracted significant attention because of the extended surfaces available for the photovoltaic (PV) installation including roofs, facades, and windows. In this study, we examine the P4 scribing process for fabricating see‐through cells on a new Cu (In,Ga)Se2 (CIGS) architecture with indium tin oxide (ITO) bottom contact, using a nanosecond laser beam of 532‐nm wavelength illuminated from glass substrate side. Through parametric studies with the variations of laser beam spot size and pulse energy, we have identified that enlarged laser beam with the pulse energy near scribing threshold could suppress both damage in ITO and electrical shunt induced by molten CIGS. Scanning electron microscopy (SEM) and energy‐dispersive X‐ray spectroscopy (EDS) analyses unveil that the molten CIGS mediated shunt mechanism, wetting the scribing edge and forming Cu‐rich metallic phase. The P4 scribing process operated near threshold fluence of enlarged laser beam clearly suppressed unwanted shunt, also minimizing the fluctuation in the desired film removal trend. Thermal analysis supports that enlarged laser beam enables scribing at reduced CIGS‐ITO interface temperature assisted by buckling‐based film delamination mechanism and also suppresses CIGS melting at scribing edge and its neighborhood. See‐through cells fabricated for the areal fraction of approximately 15% using the optimal laser scribing parameters exhibited the short circuit current reduction rate of 16.8% enabled by the low shunt resistance reduction rate of approximately 8%. Further studies are underway to elucidate precise shunt‐related scribing mechanism on the basis of the cross‐sectional analyses and time‐resolved diagnostics and to fabricate the module level see‐through PV architectures.
关键词： nanosecond laser,laser scribing,CIGS thin film solar cell,see‐through solar cell
更新于2025-09-12 10:27:22
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[IEEE 2019 IEEE 9th International Nanoelectronics Conferences (INEC) - Kuching, Malaysia (2019.7.3-2019.7.5)] 2019 IEEE 9th International Nanoelectronics Conferences (INEC) - ITO Islands as Floating Electrodes to Deposit Aligned Carbon Nanotubes for Photovoltaic Applications
摘要： Recently transparent conductive electrodes (TCEs) have attracted the interest of researchers due to their outstanding optical and electrical properties. Indium tin oxide (ITO) is an oxide material that combines the criteria of high conductance and transmittance. However, ITO is a non-flexible, brittle and expensive material. TCEs are commonly embedded in solar cells to perform high photon absorption and electron collection instantaneously. In this paper, an optimized TCE network is proposed to maintain TCEs’ conductivity and transparency and to improve their flexibility and ability to handle mechanical forces. The network is designed by aligning multi-walled carbon nanotubes (MWCNTs) on ITO speckled surface to form ITO-CNT through grid. The alignment mechanism is achieved by dielectrophoretic (DEP) force, where an electric field of 10V and 105 Hz is subjected to an ethanol/ MWCNT suspension to assemble the CNT across ITO’s floating electrodes.
关键词： Alignment,DEP,Thin film solar cell,TCEs,MWCNT
更新于2025-09-12 10:27:22
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Development of Textured Electrode, Index Matching Layer and Nanostructured Materials for Light Trapping inside Photovoltaic devices
摘要： In order to reduce the energy harvesting cost, numerous efforts have been made to replace crystalline silicon solar cells with thin film based solar cells. The device efficiency of thin film photo-voltaic devices needs to be improved. Currently, surface texturing based light trapping technologies have been used to improve the device efficiency of photo-voltaic devices. In this paper, we demonstrate experimentally that surface textured hydrogenated ZnO:Al films as transparent conducting oxide (TCO) electrode and nanostructured materials in solar cells improve the anti-reflection properties of TCO coated glass substrate. These surfaces scatter the incident light inside the active layer of solar cells. Scattering of light on textured and nanostructured surface causes increase in average light path length inside active layer which results in increased absorption coefficient. Amorphous silicon solar cells fabricated on textured TCO layer show increase in device efficiency. Silicon nitride film was used as index matching layer between glass and TCO and increase in transmittance was observed. Silicon nanowires were grown using PECVD for their application in solar cells. Metal (Indium) nanoparticles were used for plasmonic light trapping inside solar cells. It was observed that textured TCO, index matching layer and plasmonic nanoparticles techniques improve the device efficiency while nanowires based devices need more optimization to get higher efficiency.
关键词： Plasmonic Light Trapping,Nano-Particles,Thin Film Solar Cell,Surface Texturing,Silicon Nanowires
更新于2025-09-12 10:27:22
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Investigation of the photovoltaic performance of n-Zno/n-CdS/p-Cu <sub/>2</sub> ZnSnS <sub/>4</sub> solar cell
摘要： The semiconducting thin film solar cell based on Cu2ZnSnS4 (CZTS) materials is considered as a promising candidate for very large-scale application due to high absorption coefficient and low cost. In this study, the performances of n-ZnO/n-CdS/p-CZTS solar cells were numerically simulated using the AFORS-HET software. The influences of double-graded bandgap and thickness of CZTS layer on the performances of the solar cell were investigated. The calculated results show that double-graded bandgap structure can greatly optimize the conversion efficiency of CZTS thin film solar cell. The optimal dual gradient structure is 1.4 eV-1.3 eV-1.5 eV, the optimal thickness ratio is 11:1, and the conversion efficiency could be 26.63%. The results of this study can serve as a guide in fabricating CZTS solar cell.
关键词： thin film solar cell,double-graded bandgap,Cu2ZnSnS4,light absorption
更新于2025-09-12 10:27:22
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p-type Cu3BiS3 thin films for solar cell absorber layer via one stage thermal evaporation
摘要： Ternary copper sulphides, especially copper-bismuth-sulphide (Cu-Bi-S), are alternative solar absorber materials due to their earth-abundant and non-toxic constituent elements, compared to the conventional copper indium gallium sulphide and cadmium telluride films. In this study, Cu-Bi-S thin films were deposited onto soda lime glass substrates using a one stage co-evaporation process from Cu2S and Bi2S3 sources, with the deposition temperatures varied from room temperature to 400°C. X-ray diffraction analysis confirmed that Cu3BiS3 was the dominant phase in the Cu-rich films, and the crystalline quality of the films was significantly improved with increasing the deposition temperature. An optical bandgap of 1.4 eV was achieved for the film deposited at 400°C, which demonstrated a Hall mobility of 3.95 cm2/V-s and a carrier concentration of 7.48 × 1016 cm-3. Cu3BiS3 films deposited at 375 and 400°C were implemented into superstrate solar cell structures (glass/ITO/n-CdS/p-Cu3BiS3/Al).
关键词： p-Cu3BiS3,optical band gap,thermal co-evaporation,thin film solar cell,absorber layer
更新于2025-09-12 10:27:22
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Enhanced photovoltaic performance of solution-processed Sb2Se3 thin film solar cells by optimizing device structure
摘要： Thin-film solar cells have attracted worldwide attention due to their high efficiency and low cost. Antimony selenide (Sb2Se3) is a promising light absorption material candidate for thin-film solar cells due to its suitable band gap, abundance, low toxicity, and high chemical stability. Herein, we fabricate an Sb2Se3 thin film solar cell using a simple hydrazine solution process. By controlling the thickness of the photoactive layer and inserting a poly(3-hexylthiophene) hole-transporting layer, an Sb2Se3 solar cell with a power conversion efficiency of 2.45% was achieved.
关键词： hole-transporting layer,n-i-p structure,solution process,poly(3-hexylthiophene),antimony Selenide,thin film solar cell
更新于2025-09-11 14:15:04
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Heat degradation of sputter-deposited Cu(In,Ga)Se2 solar cells and modules: Impact of processing conditions and bias
摘要： We report accelerated heat degradation studies on fully encapsulated Cu(In,Ga)Se2 modules as a function of film growth parameters, in particular back contact selenization (preeSe), as well as the impact of bias (light/voltage) during heat degradation. We show that pre-Se conditions have a profound effect on the heat stability of the device, whereby reduced preeSe, while increasing initial efficiency, results in strong heat degradation, driven by a combination of reduced space-charge region and reduced minority carrier lifetime (as evident from external quantum efficiency measurements) in the light-soaked state and resulting in strong degradation of short-circuit current. This is also accompanied by a stronger increase in the shallow acceptor concentration (as measured by capacitance-voltage profiling) in the degraded state, suggesting that the SeeCu divacancy complex (VSe-VCu) is likely responsible. In this case, appearance of a high concentration of deep acceptor states accompanies increased shallow doping upon light-soaking, with the former reducing bulk lifetime and the latter further affecting electron collection due to narrow depletion width. This result suggests that bulk structural properties of the absorber film are strongly impacted by the back contact selenization conditions, making the film more susceptible to heat degradation. In the second part of this paper we show that electrical or light bias during heat exposure reduces degradation, in particular almost fully eliminating the above short-circuit current loss. This is a surprising result as usually the positive effects of bias are attributed to interfacial changes, while our results demonstrate that bulk properties can be improved as well.
关键词： Absorber,Interface,Defects,Thin film solar cell,Heat degradation,Reliability,Light soaking,Copper indium gallium selenide
更新于2025-09-11 14:15:04
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One-step P2 scribing of organometal halide perovskite solar cells by picosecond laser of visible wavelength
摘要： Perovskite solar cells (PSC) have attracted attention by its unprecedented rise in device efficiency. However, the PSCs were mostly tested for the unit cell of small area, and it is important to upscale to solar modules. Laser scribing has great potential to this end. However, the key challenge identified in one-step P2 laser scribing is to remove film stack including the hole block layer (HBL) without damaging transparent conducting oxide (TCO) based bottom contact and thus to provide interconnecting paths with minimized contact resistance. In this study, we evaluate one-step P2 scribing performance of picosecond laser of 532 nm wavelength for mesoscopic perovskite architecture with the c-TiO2 as the HBL and fluorine doped tin oxide (FTO) as bottom contact. Despite anticipated challenge of low absorption selectivity, c-TiO2 layer could be efficiently removed without FTO damage over wide processing window enabling a self-terminating mechanism. Detailed parametric studies elucidate relevant scribing mechanisms such as layer-by-layer ablation mechanism or lift-off mechanism depending laser illumination direction. It is also revealed that the removal of c-TiO2 is triggered by ablation of upper layers, in particular, the mesoporous TiO2. Module level test is under way in conjunction with investigation of further scribing mechanisms.
关键词： picosecond laser,P2 scribing,laser scribing,Perovskite thin film solar cell
更新于2025-09-11 14:15:04
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Numerical Simulation of Single Junction InGaN Solar Cell by SCAPS
摘要： The performance of the InGaN single-junction thin film solar cells has been analyzed numerically employing the Solar Cell Capacitance Simulator (SCAPS-1D). The electrical properties and the photovoltaic performance of the InGaN solar cells were studied by changing the doping concentrations and the bandgap energy along with each layer, i.e. n- and p- InGaN layers. The results reveal an optimum efficiency of the InGaN solar cell of ~ 15.32 % at a band gap value of 1.32 eV. It has been observed that lowering the doping concentration NA leads to an improvement of the short circuit current density (Jsc) (34 mA/cm2 at NA of 1016 cm?3). This might be attributed to the increase of the carrier mobility and hence an enhancement in the minority carrier diffusion length leading to a better collection efficiency. Additionally, the results show that increasing the front layer thickness of the InGaN leads to an increase in the Jsc and to the conversion efficiency (????). This has been referred to the increase in the photogenerated current, as well as to the less surface recombination rate.
关键词： Thin film solar cell,SCAPS,InGaN
更新于2025-09-11 14:15:04