修车大队一品楼qm论坛51一品茶楼论坛,栖凤楼品茶全国楼凤app软件 ,栖凤阁全国论坛入口,广州百花丛bhc论坛杭州百花坊妃子阁

oe1(光电查) - 科学论文

过滤筛选

出版时间
  • 2018
研究主题
  • thin-film transistors
  • N2O plasma treatment.
  • amorphous InGaZnO
  • gate-bias stress
  • stability
应用领域
  • Electronic Science and Technology
机构单位
  • Peking University
567 条数据
?? 中文（中国） ▾

  • Transparent Heater Based on Al,Ga Co-doped ZnO Thin Films

    摘要： Al, Ga co-doped ZnO thin films were deposited on to glass substrates by aerosol assisted chemical transport (AACT) and were studied for application as transparent thin film heaters. The film thickness was around 400 nm after 60 min of AACT deposition; this gave a sheet resistance of 142.5 ?/sq, which corresponded to a resistivity of 5.7 x 10-3 ?.cm. The thin films exhibited a maximum transmittance of 90% in the visible region. A mean temperature of 132.3 oC was reached after applying a voltage of 18 V for 10 min, giving a power consumption of 2.11 W. These results could provide a possibility to use Al, Ga co-doped ZnO thin films as transparent heaters to replace the more expensive indium tin oxide.

    关键词： Transparent conducting oxides,microwave synthesis,thin film heater

    更新于2025-09-09 09:28:46

  • Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2

    摘要： Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew high-quality single-crystalline AlN thin film on sapphire substrate with an intrinsic WS2 overlayer (WS2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaN-based deep ultraviolet light emitting diode structure on WS2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.

    关键词： van der Waals epitaxy,AlN thin film,MOCVD,WS2

    更新于2025-09-09 09:28:46

  • In-situ XPS Study of Core-levels of ZnO Thin Films at the Interface with Graphene/Cu

    摘要： We have investigated core-levels of ZnO thin films at the interface with the graphene on Cu foil using in-situ X-ray Photoelectron Spectroscopy (XPS). Spectral evolution of C 1s, Zn 2p, and O 1s are observed in real time during RF sputtering deposition. We found binding energy (BE) shifts of Zn 2p and ‘Zn?O’ state of O 1s depending on ZnO film thickness. Core-levels BE shifts of ZnO will be discussed on the basis of electron transfer at the interface and it may have an important role in the electronic transport property of the ZnO/graphene-based electronic device.

    关键词： In-situ XPS,Electron transfer,Graphene,Thin film,ZnO,Dipole,Interface

    更新于2025-09-09 09:28:46

  • Structural and morphological behavior of bismuth thin films grown through DC-magnetron sputtering

    摘要： Bismuth thin films were grown onto glass substrates through the DC magnetron sputtering technique. The effects of substrate temperature on the microstructure of the films were evaluated. The structural behavior was analyzed via X-ray diffraction, and it showed a marked influence of the substrate temperature on the crystallite size and the micro-stress. The morphologies evaluated through Electron Probe Micro-analyzer images indicated a slight difference in the grain size with an increase in temperature as well as a significant increase in surface roughness, according to profilometer measurements.

    关键词： microstructure,thin film,Bismuth,sputtering,thermal effects

    更新于2025-09-09 09:28:46

  • Comparison of vanadium oxide thin films deposited from commercial and solution combustion synthesised powders

    摘要： In the present work, V2O5 thin films were fabricated with both commercial and solution combustion synthesised V2O5 resorting to a single spin coating sol–gel deposition. Structural and morphological properties of V2O5 powder were investigated first, subsequently followed by a detailed investigation of the optical and electrochemical properties of thin films. The film, which was coated from as-synthetised powder onto corning substrate had a transparency of greater than 85% in the visible region for sol–gels exhibited absorption edges at ～380 nm. The optical band-gap energy was evaluated to be 2.7 eV, while the coloration efficiency of this film was found to be 36.8 cm2 C?1. The film thickness range of 100–300 nm was demonstrated in 1-layer. The main properties of the afore discussed thin films provide further encouragement for application in future nanoscale (opto-) electronic devices as they are reproducible, cost-effective, and quick to fabricate.

    关键词： electrochemical properties,optical properties,vanadium pentoxide,sol–gel coating,Solution combustion synthesis,thin film

    更新于2025-09-09 09:28:46

  • Nanoelectronics and Materials Development || Epitaxial Cu3Ge Thin Film: Fabrication, Structure, and Property

    摘要： In this paper, the fabrication and electrical property characterization of epitaxial Cu3Ge thin film are performed. By adjusting deposition parameters, the crystallinity of the as‐grown Cu3Ge thin films is improved, with the formation of twins within it. The average work function of epitaxial Cu3Ge thin film is measured to be ～4.47 + 0.02 eV, render‐ ing it a desirable mid‐gap gate metal for applications in complementary metal‐oxide semiconductor (CMOS) devices. The present study therefore shows an epitaxial Cu3Ge thin film that is promising for applications.

    关键词： sapphire,semiconductor metallization,Cu3Ge thin film,pulsed laser deposition,twin

    更新于2025-09-09 09:28:46

  • Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma

    摘要： Plasma-enhanced atomic layer deposition (PEALD) is well-known for fabricating conformal and uniform films with a well-controlled thickness at the atomic level over any type of supporting substrate. We prepared nickel oxide (NiO) thin films via PEALD using bis(ethylcyclopentadienyl)-nickel (Ni(EtCp)2) and O2 plasma. To optimize the PEALD process, the effects of parameters such as the precursor pulsing time, purging time, O2 plasma exposure time, and power were examined. The optimal PEALD process has a wide deposition-temperature range of 100-325 oC and a growth rate of 0.037±0.002 nm per cycle. The NiO films deposited on a silicon substrate with a high aspect ratio exhibited excellent conformality and high linearity with respect to the number of PEALD cycles, without nucleation delay.

    关键词： Thin Film,Nickel Oxide,Plasma-enhanced Atomic Layer Deposition,Bis(ethylcyclopentadienyl)-nickel,Atomic Layer Deposition

    更新于2025-09-09 09:28:46

  • Micro-nano scale imaging and the effect of annealing on the perpendicular structure of electrical-induced VO2 phase transition

    摘要： It was research hotspot that how to lower the threshold switching voltage (Vth), especially for the perpendicular structure of electrical-induced VO2 insulator-metal phase transition (MIT). This structure can reduce the Vth to the orders of 10-1 V. In micro-nano scale, combined with results of resistance change versus temperature, X-ray photoelectron spectroscopy measurements and conductive atomic force microscope, we had confirmed that V3+ was an important factor for electrical-induced VO2 thin MIT. On the one hand, joule heating produced by conductive V3+ region induced the surrounding VO2 region phase transition. On the other hand, with the annealing time increased from 0 min to 2 min at 470℃ in H2/N2 mixture gases, V3+ contents increased, thin film surface conductive areas increased, thin film resistance decreased, and finally resulted in threshold switching voltage decreased. Our experimental results were consistent with theory analysis. However, when the annealing time was too long (≥3 min), VO2 thin film threshold switching behavior disappeared, and current was linearly increased with voltage.

    关键词： Perpendicular structure of electrical-induced VO2 MIT,Annealing process,Micro-nano scale current mapping,perpendicular VO2 thin film structure,threshold switching voltage

    更新于2025-09-09 09:28:46

  • A New High-Gain Operational Amplifier Using Transconductance-Enhancement Topology Integrated with Metal Oxide TFTs

    摘要： This paper presents an integrated operational amplifier (OPAMP) consisting of only n-type metal oxide thin-film transistors (TFTs). In addition to using positive feedback in the input differential pair, a transconductance-enhancement topology is applied to improve the gain of the OPAMP. The OPAMP has a voltage gain (Av) of 29.54 dB over a 3 dB bandwidth (BW) of 9.33 kHz at a supply voltage of 15 V. The unity-gain frequency, phase margin and DC power consumption (PDC) are 180.2 kHz, 21.5°PM and 5.07 mW, respectively.

    关键词： transconductance-enhancement topology,Operational amplifier,positive feedback,metal oxide thin-film transistors (TFTs)

    更新于2025-09-09 09:28:46

  • AACVD Grown WO3 Nanoneedles Decorated with Ag/Ag2O Nanoparticles for Oxygen Measurement in a Humid Environment

    摘要： A sensitive material consisting of silver/silver oxide decorated WO3 was successfully grown in two steps via aerosol-assisted chemical vapour deposition (AACVD). Morphological, structural, and composition analysis revealed our method is effective for growing WO3 nanoneedles decorated with silver/silver oxide nanoparticles at relatively low temperature (≤ 375°C) onto sensor arrays printed on alumina substrate. The sensors were tested for oxygen under humid environment (relative humidity ~85%) with the concentration ranging between 0% and 20%. Gas sensing results showed good response to oxygen with optimum temperature was observed at 400°C for undecorated WO3 and at 350°C for silver/silver oxide decorated WO3. The addition of silver/silver oxide was found to improve the sensor response by almost 300%, making the sensor a potential alternative to replace existing Pb-based oxygen sensor.

    关键词： Chemical sensor,heterojunction,tungsten oxide,oxygen detection,silver oxide,thin film sensor

    更新于2025-09-09 09:28:46