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Improved Charge Injection and Transport of Light-Emitting Diodes Based on Two-Dimensional Materials
摘要： Light-emitting diodes (LEDs) are considered to be the most promising energy-saving technology for future lighting and display. Two-dimensional (2D) materials, a class of materials comprised of monolayer or few layers of atoms (or unit cells), have attracted much attention in recent years, due to their unique physical and chemical properties. Here, we summarize the recent advances on the applications of 2D materials for improving the performance of LEDs, including organic light emitting diodes (OLEDs), quantum dot light emitting diodes (QLEDs) and perovskite light emitting diodes (PeLEDs), using organic ?lms, quantum dots and perovskite ?lms as emission layers (EMLs), respectively. Two dimensional materials, including graphene and its derivatives and transition metal dichalcogenides (TMDs), can be employed as interlayers and dopant in composite functional layers for high-e?ciency LEDs, suggesting the extensive application in LEDs. The functions of 2D materials used in LEDs include the improved work function, e?ective electron blocking, suppressed exciton quenching and reduced surface roughness. The potential application of 2D materials in PeLEDs is also presented and analyzed.
关键词： perovskite light emitting diodes,quantum dot light emitting diodes,organic light emitting diodes,two-dimensional materials
更新于2025-09-16 10:30:52
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Tunable Photoresponse by Gate Modulation in Bilayer Graphene Nanoribbon Devices
摘要： Control of absorption and photocurrent conversion is of practical importance for the design of photoelectric devices. In this paper, using simulations, we demonstrate that the photoresponse of a bilayer graphene nanoribbon (GNR) device can be controlled by gate voltage modulation. A vertical gate ?eld shifts the potential on the top and bottom layers in opposite directions, resulting in a continuous change of band gap with applied gate voltage. This ?eld simultaneously facilitates separation of photoexcited electron?hole pairs and gives rise to a photocurrent in a selected photon energy range. The photoresponse of a bilayer GNR device can thus be tuned by adjusting the applied gate voltage. In addition, the light frequency range can be changed by using nanoribbons of di?erent widths. These ?ndings provide a basis for the design of adjustable optoelectronic devices using two-dimensional materials.
关键词： optoelectronic devices,gate modulation,graphene nanoribbon,two-dimensional materials,photoresponse
更新于2025-09-12 10:27:22
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MXenes induce epitaxial growth of size-controlled noble nanometals: a case study for surface enhanced Raman scattering (SERS)
摘要： Noble nanometals are of significance in both scientific interest and technological applications, which are usually obtained by conventional wet-chemical synthesis. Organic surfactants are always used in the synthesis to prevent unexpected overgrowth and aggregation of noble nanometals. However, the surfactants are hard to remove and may interfere with plasmonic and catalytic studies, remaining surfactant-free synthesis of noble nanometals a challenge. Herein, we report an approach to epitaxial growth of size-controlled noble nanometals on MXenes. As piloted by density functional theory calculations, along with work function experimental determination, kinetic and spectroscopic studies, epitaxial growth of noble nanometals is initiated via a mechanism that involves an in situ redox reaction. In the redox, MXenes as two-dimensional solid reductants whose work functions are compatible with the reduction potentials of noble metal cations, enable spontaneous donation of electrons from the MXenes to noble metal cations and reduce the cations into nanoscale metallic metals on the outmost surface of MXenes. Neither surfactants nor external reductants are used during the whole synthesis process, which addresses a long-standing interference issue of surfactant and external reductant in the conventional wet-chemical synthesis. Moreover, noble nanometals are size-controlled. Impressively, noble nanometals firmly anchored on MXenes exhibit excellent performance towards surface enhanced Raman scattering. Our developed strategy will promote the nanostructure-controlled synthesis of noble nanometals, offering new opportunities to further improve advanced functional properties towards practical applications.
关键词： SERS,Two-dimensional materials,MXene,In situ redox,Noble metal
更新于2025-09-12 10:27:22
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Controlled Plasma Thinning of Bulk MoS <sub/>2</sub> Flakes for Photodetector Fabrication
摘要： The electronic properties of layered materials are directly determined based on their thicknesses. Remarkable progress has been carried out on synthesis of wafer-scale atomically molybdenum disulfide (MoS2) layers as a two-dimensional material in the past few years in order to transform them into commercial products. Although chemical/mechanical exfoliation techniques are used to obtain a high-quality monolayer of MoS2, the lack of suitable control in the thickness and the lateral size of the flakes restrict their benefits. As a result, a straightforward, effective, and reliable approach is widely demanded to achieve a flake with control in its thickness for optoelectronic applications. In this study, thick MoS2 flakes are obtained by a short-time bath sonication in dimethylformamide solvent, which are thinned with the aid of a sequential plasma etching process using H2, O2, and SF6 plasma. A comprehensive study has been carried out on MoS2 flakes based on scanning electron microscopy, atomic force microscopy, Raman, transmission electron microscopy, and X-ray photoelectron microscopy measurements, which ultimately leads to a two-cycle plasma thinning method. In this approach, H2 is used in the passivation step in the first subcycle, and O2/SF6 plasma acts as an etching step for removing the MoS2 layers in the second subcycle. Finally, we show that this technique can be enthusiastically used to fabricate MoS2-based photodetectors with a considerable photoresponsivity of 1.39 A/W and a response time of 0.45 s under laser excitation of 532 nm.
关键词： photodetector,MoS2,optoelectronic applications,plasma thinning,two-dimensional materials
更新于2025-09-12 10:27:22
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Spectral responsivity and photoconductive gain in thin film black phosphorus photodetectors
摘要： We have fabricated black phosphorus photodetectors and characterized their full spectral responsivity. These devices, which are effectively in the bulk thin film limit, show broadband responsivity ranging from <400 nm to the ~3.8 μm bandgap. In the visible, an intrinsic responsivity >6 A/W can be obtained due to internal gain mechanisms. By examining the full spectral response, we identify a sharp contrast between the visible and infrared behavior. In particular, the visible responsivity shows a large photoconductive gain and gate-voltge dependence, while the infrared responsivity is nearly independent of gate voltage and incident light intensity under most conditions. This is attributed to a contribution from the surface oxide. In addition, we find that the polarization anisotropy in responsivity along armchair and zigzag directions can be as large as 103 and extends from the band edge to 500 nm. The devices were fabricated in an inert atmosphere and encapsulated by Al2O3 providing stable operation for more than 6 months.
关键词： Two-dimensional materials,Mid-infrared,Photodetectors,Black phosphorus,Photoconductive gain
更新于2025-09-12 10:27:22
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Photodetector based on heterostructure of two-dimensional WSe2/In2Se3
摘要： Heterojunctions formed by two-dimensional (2D) layered semiconducting materials have been studied extensively in the past several years. These van der Waals (vdW) structures have shown great potential in future electronic and optoelectronic devices. However, the optoelectronic performance of these devices is limited by the indirect band gap of the multilayer materials and low light absorption of single layer materials. Here, we fabricate photodetectors based on heterojunctions composed of n-type multilayer α-Indium Selenide (In2Se3) and p-type Tungsten Diselenide (WSe2) for the first time. The direct band gap of multilayer α-In2Se3 and type-II band alignment of the WSe2/In2Se3 heterojunction enable high optoelectronic performance of the devices at room temperature in the air. Without light illumination, the dark current is effectively suppressed to 10-13 A under -1 V bias and a high rectification ratio of 7.37×103 is observed. Upon laser illumination with the wavelength of 650 nm, the typical heterojunction device exhibits a photocurrent on/off ratio exceeding 1.24×105, a maximum photo responsivity of 26 mA/W and short photoresponse time of 2.22 ms. Moreover, the heterojunction photodetectors show obvious light response in the wavelength range from 650 nm to 900 nm. The present 2D vdW heterojunctions composed of direct band gap multilayer materials show great potential in future optoelectronic devices.
关键词： In2Se3,photodetector,two-dimensional materials,WSe2,direct band gap materials,heterojunction
更新于2025-09-11 14:15:04
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Toward Coupling Color Centers in Single Crystal Diamond to Two-Dimensional Materials
摘要： Individual nitrogen vacancy (NV) color centers in diamond are bright, photo-stable, atomic-sized dipole emitters [1]. Consequently, they represent optimal candidates for novel scanning near field microscopy techniques [2]. Here, NV centers form one member of a F¨orster Resonance Energy Transfer (FRET) pair. Due to their broadband emission (> 100 nm), NVs are versatile donors for FRET to systems absorbing in the near infrared spectral range. Highly-promising applications include, e.g., nanoscale imaging of fluorescent molecules or nanomaterials like graphene [2]. Critical parameters for FRET are the NV’s quantum efficiency, charge state stability and NV-sample-distance. Previous experiments used NVs in nanodiamond for FRET [2], however these NVs might suffer from quenching, instability and badly controlled surface termination. We here address this issue by using shallowly implanted NV centers in optimized cylindrical nanostructures [3] used as scanning probes in our homebuilt combination of a confocal and an atomic force microscope. In recent years, two-dimensional materials especially monolayers of semiconducting materials are of major interest in research. Particularly, dichalcogenides like, e.g., tungsten diselenide (WSe2) are promising candidates for a varity of applications [4]. WSe2 emits photons at a wavelength of around 750 nm while absorbing photons below 700 nm [4] which renders WSe2 as a promising FRET partner for NV centers. Here, we present first results towards demonstrating the interaction of NV color centers in single crystal diamond with WSe2. We envisage using quenching of the NV center sued as a donor in FRET in close proximity to the 2D material as a valuable sensing ressource.
关键词： F¨orster Resonance Energy Transfer (FRET),tungsten diselenide (WSe2),nitrogen vacancy (NV) color centers,diamond,two-dimensional materials
更新于2025-09-11 14:15:04
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High-yield production of stable antimonene quantum sheets for highly efficient organic photovoltaics
摘要： High-performance organic photovoltaics (OPVs) are of great scientific and technological importance due to their potential large-scale industrial applications. Introducing semiconductor quantum dots has been proven to be an effective way to improve the power conversion efficiency (PCE) of OPVs. In this paper, we report a novel approach to fabricate atomically thin antimonene quantum sheets (AMQSs) possessing a uniform size (～2.2 nm) via imidazolium ionic liquid-assisted exfoliation. In this method, the yield of AMQSs (1.1 mg mL?1) has been increased by nearly two orders of magnitude compared with that of previously reported methods. Furthermore, upon adding AMQSs into the light absorber in OPVs, the optimal device with 1.0 mg mL?1 AMQSs shows the highest PCE of 9.75%, resulting in over 25% enhancement in PCE compared to that of the reference device. It also leads to a noticeable enhancement in the short-circuit current density (Jsc) of 16.7% and the fill factor (FF) of 8.4%. The increased PCE is mainly due to the two-dimensional electronic structure of AMQSs that can enhance the light absorption, assist exciton dissociation and reduce charge recombination of OPVs. This work provides a new avenue toward mass production of two-dimensional quantum sheets and points to a new strategy for highly efficient OPVs.
关键词： antimonene quantum sheets,organic photovoltaics,power conversion efficiency,ionic liquid-assisted exfoliation,two-dimensional materials
更新于2025-09-11 14:15:04
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Transparent Collision Visualization of Point Clouds Acquired by Laser Scanning
摘要： Exploring two-dimensional (2D) materials with room-temperature ferromagnetism and large perpendicular magnetic anisotropy is highly desirable but challenging. Here, through first-principles calculations, we propose a viable strategy to achieve such materials based on transition metal (TM) embedded borophene nanosheets. Due to electron deficiency, the commonly existent hexagon boron vacancies in various borophene phases serve as intrinsic anchor points for electron-rich transition metals, which not only adsorb strongly upon the vacancies but also favor to be embedded into the vacancies, forming 2D planar hybrid nanosheets. The adsorption-to-embedding transition is feasible thermodynamically and kinetically, owing to its exothermic nature and relatively small kinetic barriers. After embedding, phase transition is further proposed to obtain diverse structures of TM embedded borophenes with versatile magnetic properties. Based on the example of χ3 phase borophene, several ferromagnetic TM embedded borophene nanosheets with high Curie temperature and large perpendicular magnetic anisotropy have been predicted.
关键词： transition metal embedded borophene nanosheets,first-principles calculations,perpendicular magnetic anisotropy,room-temperature ferromagnetism,two-dimensional materials
更新于2025-09-11 14:15:04
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Study of Charge Transfer at Quantum Dot-Graphene Interface by Raman Spectroscopy
摘要： Charge transfer at the interface is important for the optoelectronic and photochemical applications of quantum dot-two dimensional material (QD-2D) hybrids. In this work, Raman spectroscopy was exploited to characterize the CdS QD-graphene hybrids with varied thicknesses of graphene and QD layer. The selection of Raman excitation energies below the QD bandgap rules out the photoexcitation effects and thus we can focus on equilibrium charge transfer upon hybrid formation. Correlation analysis of Raman spectra shows evidences of electron transfer with concentration on the order of ~1012 cm-2, confirmed by electrical measurements. The method used in this study can be applied to characterize the interfacial interaction of various QD-2D hybrids.
关键词： hybrid interface,charge transfer,quantum dots,Raman spectroscopy,two-dimensional materials
更新于2025-09-11 14:15:04