研究目的
Investigating the controllability of the photocurrent in bilayer armchair graphene nanoribbons (GNRs) through gate voltage modulation.
研究成果
The gate voltage is an effective way to adjust the low-energy limit of the photocurrent spectrum in bilayer armchair GNRs, enabling control over the photoresponse in a selected photon energy range. This provides a basis for the design of adjustable optoelectronic devices using two-dimensional materials.
研究不足
The study is based on simulations, and practical implementation may face challenges related to material fabrication and device integration. The effects of environmental factors and material imperfections are not considered.
1：Experimental Design and Method Selection
The study employs simulations to investigate the photoresponse of bilayer GNR devices under gate voltage modulation. The non-equilibrium Green’s function (NEGF) method and density functional-based tight binding (DFTB) method are used for modeling the electronic structure and photoelectric conversion process.
2：Sample Selection and Data Sources
Bilayer armchair GNRs with AB (Bernal) stacking are considered. The GNRs are semi-infinite with the same width, and the interlayer distance is set to 0.34 nm.
3：List of Experimental Equipment and Materials
The simulation involves the use of a DFTB method with a matsci-0-3 parameter set for electronic structure modeling.
4：Experimental Procedures and Operational Workflow
The photocurrent is simulated by applying a gate voltage across the bilayer GNR device, with the polarization direction of incident light varied to study its effect on photocurrent responsivity.
5：Data Analysis Methods
The photocurrent responsivity is analyzed as a function of gate voltage and photon energy, with contributions from intralayer and interlayer excitations evaluated.
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