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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • Dual Material Gate (DMG)
  • Vertical TFET
  • Single Material Gate(SMG)
  • Band-to-band tunneling (BTBT)
应用领域
  • Electronic Science and Technology
机构单位
  • National Institute of Technology Silchar
154 条数据
?? 中文（中国） ▾

  • Manipulating the Phase Distributions and Carrier Transfers in Hybrid Quasi-Two-Dimensional Perovskite Films

    摘要： Quasi two-dimensional perovskites are promising alternatives to conventional three-dimensional perovskites because of their high stability and easy tunability. However, controlling the phase distribution according to device architecture remains a major challenge. Here, the manipulation of phase purity and vertical distribution proven by ultrafast transient absorption spectroscopy, and their effect on device characteristics are reported. By adding ethyl acetate as antisolvent, the growth direction of the perovskite film is flipped. CH3NH3Cl and dimethyl sulfoxide are used to slow the growth rate of the crystal, which gives better phase purity. The direction of carrier transfer is tuned accordingly. It is found that solar cell performance is more sensitive to phase purity relative to vertical distribution. These findings are of importance for the applications of quasi-2D perovskites in different types of devices that require to change phase purity and vertical distribution.

    关键词： solar cells,carrier transfer,vertical distribution,phase purity,quasi-2D perovskite

    更新于2025-11-19 16:56:35

  • High-responsivity Two-dimensional p-PbI <sub/>2</sub> /n-WS <sub/>2</sub> Vertical Heterostructure Photodetectors Enhanced by Photogating Effect

    摘要： Two-dimensional (2D) vertical p-n heterostructure photodetectors are significant building blocks in nanoscale integrated optoelectronics. However, the unsatisfactory photosensing performance combined with complicated fabrication process still remains a challenge. In this work, the fabrication of high performance vertical photodetectors based on vapor grown p-PbI2/n-WS2 heterostructures is reported, in which the WS2 serves as the photogate to modulate the channel current. Due to the photogating effect in the heterostructures, the recombination of photo-excited electron–hole pairs is effectively suppressed, leading to high photoresponsivity up to 5.57 × 102 A W-1, which represents the highest value among the ever reported vapor-grown vertical p-n heterostructures. Moreover, the photoresponsivity is highly tunable through the gate voltage bias, and can be further improved to 7.1 × 104 A W-1 by applying a negative gate voltage bias of -60 V. The excellent photosensing properties of the PbI2/WS2 heterostructures combined with the facile synthesis method suggest a great potential in developing high performance 2D optoelectronic devices.

    关键词： vertical p-n heterostructure,photogating effect,vapor deposition,photodetectors,Two-dimensional

    更新于2025-11-14 17:04:02

  • Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors

    摘要： With finite density of states and electrostatically tunable work function, graphene can function as a tunable contact for semiconductor channel to enable vertical field effect transistors (VFET). However, the overall performance, especially the output current density is still limited by the low conductance of the vertical semiconductor channel, as well as large series resistance of graphene electrode. To overcome these limitations, we construct a VFET by using single crystal InAs film as the high conductance vertical channel and self-aligned metal contact as the source-drain electrodes, resulting a record high current density over 45,000 A/cm2 at a low bias voltage of 1 V. Furthermore, we construct a device-level VFET model using resistor network method, and experimentally validate the impact of each geometry parameter on device performance. Importantly, we found the device performance is not only a function of intrinsic channel material, but also greatly influenced by device geometries and footprint. Our study not only pushes the performance limit of graphene VFETs, but also sheds light on van der Waals integration between two-dimensional material and conventional bulk material for high performance VFETs and circuits.

    关键词： resistor network model,high current density,vertical transistor,graphene,van der Waals heterostructure,InAs film

    更新于2025-09-23 15:23:52

  • Vertically-grown few-layer MoS2 nanosheets on hierarchical carbon nanocages for pseudocapacitive lithium storage with ultrahigh-rate capability and long-term recyclability

    摘要： Molybdenum disulfide (MoS2) are intensively studied anode materials for lithium-ion batteries (LIBs) owing to the high theoretical capacity, but still confront the severe challenges of unsatisfied rate capability and cycle life to date. Herein, few-layer MoS2 nanosheets are vertically grown on the hierarchical carbon nanocages (hCNC) via a facile hydrothermal method, which introduce pseudocapacitive lithium storage owing to the highly-exposed MoS2 basal planes, enhanced conductivity and facilitated electrolyte access arising from the well hybridization with hCNC. As a result, the optimized MoS2/hCNC exhibits the reversible capacity of 1670 mAh g-1 at 0.1 A g-1 after 50 cycles, 621 mAh g-1 at 5.0 A g-1 after 500 cycles, and 196 mAh g-1 at 50 A g-1 after 2,500 cycles, staying at the top level of the MoS2-based anode materials. The specific power and specific energy can reach to 16.1 kW kg-1 electrode and 252.8 Wh kg-1 electrode after 3,000 cycles, respectively, showing the great potential in high-power and long-life LIBs. This finding suggests a promising strategy for exploring advanced anode materials with high reversible capacity, high-rate capability and long-term recyclability.

    关键词： pseudocapacitive lithium storage,vertical few-layer MoS2,hierarchical carbon nanocages,long-term recyclability,ultrahigh-rate capability

    更新于2025-09-23 15:23:52

  • Direct patterned growth of intrinsic/doped vertical graphene nanosheets on stainless steel via heating solid precursor films for field emission application

    摘要： Vertical graphene nanosheets (VGNs), normally consisting of one to several graphene layers vertically aligned on substrates, are promising in a variety of applications including field electron emitters, gas sensors and energy storage devices. Herein, we report a simple, green, easily scalable and cost-effective strategy of growing both intrinsic and nitrogen (N)-doped VGNs on stainless steel (SS) just by heating the solid thin layers of glucose and/or urea in a resistance-heating furnace. It is interesting that VGNs mainly grow on the roughened regions, which can be attributed to the more nucleation and catalyzing sites on such regions than smooth SS. Meanwhile, the N doping concentration can be adjusted by varying the urea addition. Field electron emission measurement indicates that the obtained N-doped VGNs exhibit excellent field emission with a relatively low turn-on electric field strength (~2.6 V μm?1 at the current density of 10 μA cm?2), large field enhancement factor (~9428) and high stability.

    关键词： Green synthesis,Nitrogen doping,Vertical graphene nanosheets,Field electron emission,Direct patterned growth

    更新于2025-09-23 15:23:52

  • Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

    摘要： Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates grown by hydride vapor phase epitaxy. Detailed material characterization was performed, and the results indicate the superiority of Ge doping in the GaN, which contributed to the SBDs with lower stress, fewer defects and higher quality. Based on the capacitance-voltage and currentevoltage measurements performed, SBDs achieved together with a low turn-on voltage Von (0.71e0.74 V), high current Ion/Ioff ratio (3.9 (cid:1) 107e2.9 (cid:1) 108), high Schottky barrier height (0.96e0.99 eV), and high breakdown voltage Vb (802 V for a 100 mm diameter). This shows that vertical GaN SBDs on the Ge-doped substrates are promising candidates for high power applications.

    关键词： GaN device,Vertical SBDs,Low turn-on voltage,Ge-doped GaN substrates,High breakdown voltage

    更新于2025-09-23 15:23:52

  • Unsupervised Band Selection of Hyperspectral Images via Multi-Dictionary Sparse Representation

    摘要： Conspicuous consumption of status goods signals consumers’ status and grants status value to them. In this article, we examine how firms selling status goods make vertical line extension decisions when they take consumers’ status preferences into account. Analyzing an incumbent’s vertical line extensions when it faces a threat of entry, we find that status preferences can make unprofitable extensions profitable. Moreover, without status preferences, an incumbent can introduce line extensions to crowd out the competitor’s profit and deter entry. However, with status preferences, introducing line extensions can increase the competitor’s profit and attract entry. We also find that incumbents should introduce downward extensions when they are monopolists and upward extensions when they face competition from lower-quality entrants. As the cost of entry increases, incumbents should change from introducing upward extensions to introducing downward extensions. As consumers’ status preferences increase, incumbents introduce downward extensions under a wider range of situations.

    关键词： status preferences,vertical line extensions,status goods,conspicuous consumption

    更新于2025-09-23 15:23:52

  • Surface plasmon resonance on blue GaN-based VCSEL with Al-grating

    摘要： Based on the research of surface plasmon (SP) applied to Vertical-Cavity Surface-Emitting Lasers (VCSEL), we proposed a new 465 nm GaN-based VCSEL to enhance illumination by deposit Al rectangular grating onto p-i-n layer. Meanwhile, an increase in the e?ective radiated power was obtained by the control of a surface plasmon mode, which depends strongly on the structural parameters such as material, period, depth and dipole location. Compared to conventional structure, we have a 30% improvement in e?ective radiated power. Such advantages make surface Al-grating be an alternative low-cost and simple technique used in SP-coupled VCSEL for the blue range.

    关键词： Finite-di?erence time-domain method,Metal grating,Surface plasmon,Vertical-cavity surface-emitting laser (VCSEL)

    更新于2025-09-23 15:23:52

  • [IEEE 2018 IEEE Conference on Antenna Measurements & Applications (CAMA) - Va?ster?s (2018.9.3-2018.9.6)] 2018 IEEE Conference on Antenna Measurements & Applications (CAMA) - Design of Low-profile Antenna with Multi-directional Beam

    摘要： An planar antenna having a low-pro?le structure using loop elements is proposed. The proposed antenna is vertically polarized and has four directional beams for sensor nodes. The thickness of the antenna is only 3.2 mm (0.11 effective wavelength) resulting in a low-pro?le structure. Simulated and measured average gain of 8.0 dBi and 5.6 dBi are obtained, respectively.

    关键词： wireless sensor network,sensor node,low-pro?le antenna,vertical polarization,multi-directional beam

    更新于2025-09-23 15:23:52

  • Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates

    摘要： A novel trench SOI LDMOS with centrosymmetric double vertical field plates structure (CDVFPT SOI LDMOS) is proposed in this paper. The 2-D device simulator MEDICI is used to investigate the characteristics of the proposed structure. Compared with the conventional trench SOI LDMOS (CT SOI LDMOS), the optimized device shows an obvious reduction in the specific on-resistance (Ron,sp) when its breakdown voltage (BV) is enhanced due to the introduction of centrosymmetric double vertical field plates structure. And when compared to previous device with floating vertical field plate trench SOI LDMOS (FVFPT SOI LDMOS), the overall performance of CDVFPT SOI LDMOS is also promoted. According to the simulation results, compared to a CT SOI LDMOS, the BV of CDVFPT SOI LDMOS increases from 188 V to 234 V. The Ron,sp, however, decreases from 2.30 mΩ·cm2 to 1.24 mΩ·cm2. In addition, the maximum lattice temperature at 1 mW/μm2 is slightly reduced.

    关键词： Power MOSFET,Specific on-resistance,Vertical field plate,Breakdown voltage

    更新于2025-09-23 15:23:52