Photoluminescence of a-Si/c-Si Heterojunction Solar Cells with Different Intrinsic Thin Layers

摘要： The photoluminescence of two types of heterostructural silicon solar cells with di?erent passivation of crystalline silicon layer was studied. The contributions of various processes to the photoluminescence are revealed by measuring the photoluminescence at low temperatures. It is shown that the dopant concentration in crystalline silicon for solar cells based on an amorphous silicon/crystalline silicon heterojunction can be estimated from photoluminescence spectra. The correlation between the photoluminescence kinetics of heterostructural silicon solar cells and the photoconversion e?ciency is established. An e?ective method to determine the quality of surface doping in crystalline silicon solar cells based on an amorphous silicon/crystalline silicon heterojunction is proposed.