研究目的
Investigating the photoluminescence of heterostructural silicon solar cells with different passivation methods of crystalline silicon layer to understand their impact on photoconversion efficiency.
研究成果
The photoconversion efficiency for the studied structures depends on the method of passivation of the c-Si surface. Photoluminescence spectra allow estimating the doping admixture concentrations for c-Si in HIT solar cells. The measurement of photoluminescence kinetics is an effective method for assessing the quality of surface passivation of HIT solar cells.
研究不足
The study is limited to two types of passivation methods and does not explore other potential passivation materials or techniques.
1：Experimental Design and Method Selection:
The study involved measuring photoluminescence at low temperatures to reveal contributions of various processes.
2：Sample Selection and Data Sources:
Two samples of HIT solar cells with different passivation layers (SiO2 and a-Si:H) were studied.
3：List of Experimental Equipment and Materials:
A pulsed solid-state neodymium laser, IKS 31 grating monochromator, Hamamatsu 10330B–75 photomultiplier, digital oscilloscope, and multichannel CCD detector were used.
4：Experimental Procedures and Operational Workflow:
Photoluminescence was excited by 532 nm radiation at room temperature and 472 nm radiation at 5 K.
5：Data Analysis Methods:
The decay of photoluminescence signal was analyzed to determine nonradiative recombination mechanisms.
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