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[IEEE 2018 20th International Conference on Transparent Optical Networks (ICTON) - Bucharest (2018.7.1-2018.7.5)] 2018 20th International Conference on Transparent Optical Networks (ICTON) - Antiresonant Oxide Island as a Measure for Improved Single-Mode Emission in VCSELs
摘要： In this paper, we propose a novel ARROW VCSEL structure with an antiresonant oxide island placed inside the resonant cavity with the use of planar oxidation technique. The oxidized island does not only improve single-mode emission, which is one of the most desired effects in vertical-cavity surface-emitting lasers (VCSELs), but also has a strong impact on modal loss associated with each lateral mode and affects the shape of their profiles. In this work, we investigate the physical basis of this impact and show how the dimensions of oxidized island determine optical properties of the ARROW VCSEL, leading to the strongest modal discrimination.
关键词： optical modeling,oxidation,ARROW,VCSEL,antiresonance,waveguiding
更新于2025-09-23 15:23:52
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$${\mathscr{P}}{\mathscr{T}}$$PT-symmetric interference transistor
摘要： We present a model of the molecular transistor, operation of which is based on the interplay between two physical mechanisms, peculiar to open quantum systems that act in concert: PT-symmetry breaking corresponding to coalescence of resonances at the exceptional point of the molecule, connected to the leads, and Fano-Feshbach antiresonance. This switching mechanism can be realised in particular in a special class of molecules with degenerate energy levels, e.g. diradicals, which possess mirror symmetry. At zero gate voltage infinitesimally small interaction of the molecule with the leads breaks the PT-symmetry of the system that, however, can be restored by application of the gate voltage preserving the mirror symmetry. PT-symmetry broken state at zero gate voltage with minimal transmission corresponds to the “off” state while the PT-symmetric state at non-zero gate voltage with maximum transmission – to the “on” state. At zero gate voltage energy of the antiresonance coincides with exceptional point. We construct a model of an all-electrical molecular switch based on such transistors acting as a conventional CMOS inverter and show that essentially lower power consumption and switching energy can be achieved, compared to the CMOS analogues.
关键词： diradicals,molecular transistor,CMOS inverter,quantum systems,PT-symmetric interference,Fano-Feshbach antiresonance
更新于2025-09-23 15:21:21
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Simulation of Quantum Current in Double Gate MOSFETs: Vortices in Electron Transport
摘要： Quantum simulation of electronic transport in double gate (DG) field-effect transistors (FETs) and FinFETs is usually deemed to be required as the devices are scaled to the nanometer length-scale. Here, we present results obtained using a simulation program to model ballistic quantum transport in these devices. Our quantum simulations show the presence of quasi bound electronic states in the channel and Fano-interference phenomenon in the transport behavior of ultra-thin body (UTB) Si DG MOSFETs. Vortices in electron wavefunctions are also reported at energies at which transmission zeros (antiresonance) occur.
关键词： Fano antiresonance,Schr¨odinger,QTBM,DG MOSFET,quantum interference,electron transport
更新于2025-09-04 15:30:14