[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - f <sub/>max</sub> =800 GHz with 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT

摘要： In This paper, we present a high maximum frequency of oscillation (fmax) and a current-gain cutoff frequency (fT) of 800 GHz and 260 GHz respectively with pseudomorphic high-electron mobility transistor (PHEMT), using a composite, InGaAs/InAs/InGaAs channel and an asymmetric gate recess. This result was achieved with long gate length LG = 75 nm. The noise performance has been explored until 110 GHz, and gives a minimum noise figure NFmin = 0.8 dB (1.8 dB) with associated gain Gass = 16 dB (11.6 dB) at 40 GHz (94 GHz). Moreover extending the drain recess length to 225 nm and reducing the gate to source distance by 200 nm allows a fmax = 1.2 THz.