研究目的
Investigating the performance of pseudomorphic high-electron mobility transistors (PHEMTs) with a composite InGaAs/InAs/InGaAs channel and asymmetric gate recess for high-frequency applications.
研究成果
The fabrication of PHEMTs with an asymmetric gate recess and composite channel achieved high fmax and fT, demonstrating the potential for high-frequency applications. The asymmetric recess improved intrinsic parameters, and further optimization could enhance performance.
研究不足
The study is limited by the degradation of mobility and electron density due to plasma etching, and the complexity of achieving precise asymmetric gate recess.
1：Experimental Design and Method Selection:
The study focuses on the fabrication and characterization of PHEMTs with a composite channel and asymmetric gate recess to achieve high fmax and fT.
2：Sample Selection and Data Sources:
InAlAs/InAs/InGaAs PHEMT epitaxial layers were grown on semi-insulating InP substrate by gas source molecular beam epitaxy (MBE).
3：List of Experimental Equipment and Materials:
Electron beam lithography, Ti/Pt/Au metals for Ohmic contacts, wet chemical etching, PECVD for Si3N4 passivation.
4：Experimental Procedures and Operational Workflow:
Fabrication involved mesa isolation, Ohmic contact realization, asymmetric gate recess, and gate electrode deposition.
5：Data Analysis Methods:
S-Parameters were measured up to 110 GHz, and noise parameters were extracted using the NF50 method.
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