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The effects of thermal annealing on the structural and electrical properties of Zinc Tin oxide thin films for transparent conducting electrode applications
摘要： The as-deposited and annealed Zinc tin oxide (Zn2SnO4) thin films were deposited by electron beam evaporation technique and were characterized for the structural, optical and electrical properties. The x-ray diffraction technique revealed the amorphous nature of as-deposited thin film while the films annealed at 400, 500 and 6000C in air were found to be polycrystalline. The phase change from amorphous to crystalline Zn2SnO4 results in the higher resistance as revealed by resistance versus temperature measurements. From the Hall Effect, the as deposited film shows the electron mobility and carrier concentrations (electron) equal to 33cm2/V.s and 8.361x 1017cm-3 respectively. The agglomeration of grains in annealed thin films are observed by Atomic Force Microscopy (AFM) technique.The peaks in Optical transmission spectra, observed by using the UV-Vis spectroscopy confirm the creation of sub levels between conduction band minimum and valence band maximum after annealing. The band gaps calculated by Tauc plot explore the possibility of shifting the Fermi level towards valence band maximum after thermal annealing.
关键词： Annealing temperature,Zn2SnO4,Band gap,Oxygen vacancies,Electron beam evaporation,TCOs
更新于2025-09-23 15:22:29
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Effect of Magnesium on Structural and Optical Properties of CaTiO3: A DFT Study
摘要： The electronic bandstructure, optical and structural properties of pure and Mg-doped CaTiO3 are calculated by using first-principle calculation which is based on the density functional theory. The effect of Mg-dopant on the properties of CaTiO3 perovskite explored by using ultra soft pseudo-potential (USP) and generalized gradient approximation (GGA). The incorporation of Mg at Ca site affected the electronic band structure of CaTiO3 meaningfully by introducing new gamma point. The incorporation of Mg increases the band gap from 1.84 eV to 1.92 eV. The partial density of states of pure CaTiO3 changed after doping cleared the effect of dopant on pure system. Optical properties of both the systems are examined which reveals that the absorption edge shifting from 2.1 eV to 2.5 eV indicates a blue shift whereas the refractive index also increases from 2 to 2.4 after doping. Thus Mg-doped CaTiO3 not only affect the optical properties of the system but also make it and appealing candidate for optical devices.
关键词： Refractive index,Doping,Density of states,Oxide Based Perovskite,Optical Properties,Band Gap
更新于2025-09-23 15:22:29
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Silicon-compatible fabrication of inverse woodpile photonic crystals with a complete band gap
摘要： Three-dimensional (3D) photonic crystals can provide access to very interesting and unique properties for ultimate control and manipulation of photons, not possible otherwise. However, widespread implementation of such photonic crystals remains elusive because the fabrication technology available today has either silicon (Si) incompatibility, poor scalability, a large number of undesired defects, challenging or impossible placement of intentional defects, or has advanced non-standard process steps available only in a few laboratories. In this work, a new methodology of fabricating 3D photonic crystals free of unintentional defects is developed. This methodology is 'truly' Si-compatible and uses techniques available in any standard fabrication facility. A broadband omnidirectional reflector on Si is demonstrated using the same method. Introduction of intentional defect sites for fabrication of 3D waveguides and optical cavities is also discussed.
关键词： Photonic Crystal,Woodpile,Broadband reflector,Band gap,Empty-space-in-Silicon
更新于2025-09-23 15:22:29
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A novel proposal for all-optical compact and fast XOR/XNOR gate based on photonic crystal
摘要： In this paper, we aim to design an all-optical device, which can perform XOR and XNOR functions in a single structure. The proposed structure will be realized by cascading two nonlinear resonant rings. The functionality of the proposed structure is based on controlling the optical behaviour of optical rings via optical intensity. The final structure has one bias and two input control ports, along with two output ports. One port acts as an XOR and the other acts as an XNOR gate. The maximum delay times for the XOR and XNOR gates are 1.5 and 2.5 ps, respectively. Therefore, the working bit rates for the XOR and XNOR gates are 666 and 400 Gbit/s, respectively.
关键词： band gap,Photonic crystal,XOR/XNOR gate,Kerr effect
更新于2025-09-23 15:22:29
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AIP Conference Proceedings [AIP Publishing LLC NANOFORUM 2014 - Rome, Italy (22–25 September 2014)] - Structural and optical properties of Sn1-xMnxO2 thin films
摘要： Sn1-xMnxO2 thin films are deposited by spray pyrolysis method. XRD of all the thin films show the amorphous nature. Synthesis of SnO2 is also confirmed by FTIR spectroscopy. Undoped SnO2 thin film is 60-70 % transparent in visible and near IR region and it increases up to80-90% for 20 at. % Mn doped SnO2 thin film. The optical band gap is tunable linearly between 3.34 to 3.96 eV for 0≤x≤0.20 for Sn1-xMnxO2 amorphous thin films.
关键词： and FTIR,Thin Films,Band Gap,Optical Transmission
更新于2025-09-23 15:22:29
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Effect of Ag incorporation on structural and opto-electric properties of pyrolized CdO thin films
摘要： We have investigated the structure, morphology and opto-electric properties of CdO and Ag-incorporated CdO thin films prepared by chemical spray pyrolysis (CSP) method. The X-ray diffraction (GIXRD) study confirms that CdO samples are highly polycrystalline with cubic structure. The AFM study shows smooth surfaces both for CdO and Ag-CdO thin films. The direct band gap energy varies from 2.25 to 2.50 eV depending on Ag content in the films. Urbach energy reversal in optical band gap indicates that several localized states are present above Fermi level or near at the conduction band. The optical properties, such as refractive index, optical conductivity and nonlinear optical susceptibility, are found dependent on Ag content. A combined effect on the transport properties has been observed with the incorporation of Ag in CdO. The metal-like electric conduction of CdO film has been removed up to a temperature Tc for Ag doping. The n-type carrier concentration of CdO is reduced with increasing Ag content and the concentration is of the order of ~ 1020 cm?3.
关键词： Band gap,Activation energy,Thin films,XRD,Urbach tail
更新于2025-09-23 15:21:21
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Effect of annealing on the physical properties of thermally evaporated In2S3 thin films
摘要： The structural, compositional, morphological and optical properties of In2S3 thin films, prepared by thermal evaporation technique and annealed in sulfur ambient at different temperatures have been investigated. The grazing incident X-ray diffraction patterns have indicated polycrystalline form and predominantly cubic structure of annealed In2S3 films. The scanning electron microscopy revealed textured surface with uniformly distributed grains and the grain size increased with increase of annealing temperature. The optical parameters of the films have been determined using conventional transmission and reflection spectra as well as from surface photovoltage measurements.
关键词： Surface photovoltage,Annealing,In2S3 thin films,Structure,Optical band gap
更新于2025-09-23 15:21:21
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Rational band design in metal chalcogenide Ba6Zn6HfS14: splitting orbitals, narrowing forbidden gap and boosting photocatalyst property
摘要： The insufficient light sources absorption often limits photocatalyst applications of metal chalcogenides because of their excessively broad band gap. Thus, it is necessary to discover and design a compound with rational band gap. Here, a new visible-light photocatalyst, Ba6Zn6HfS14, is prepared through the traditional high temperature solid-state reaction. A set of experiments on the visible-light decomposition of methylene blue demonstrated that the photocatalytic efficiency of Ba6Zn6HfS14 (0.00761 min-1) is improved, compared to that of Ba6Zn6ZrS14 (0.00553 min-1) which proved to be a previously reported visible-light photocatalyst with similar structure. The UV-visible reflection spectra demonstrated the energy gap of Ba6Zn6HfS14 (E1=1.45eV; E2 =2.55eV) is smaller than that of Ba6Zn6ZrS14 (E1 = 1.78eV; E2 = 2.50eV; E3 = 2.65eV). The Ba6Zn6HfS14 absorbs more visible light and exhibits preferably photocatalytic activity. The origin of splitted energy bands were elucidated via the first calculations.
关键词： band gap engineering,chalcogenides,visible-light photocatalyst
更新于2025-09-23 15:21:21
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Theory-Driven Heterojunction Photocatalyst Design with Continuously Adjustable Band Gap Materials
摘要： The utilization efficiency of hot carriers in photocatalyst is limited at present by their fast recombination. Heterojunction interface would reduce the recombination rate by effectively facilitating spatial separation of the hot electron and hole. Here, we establish a heterojunction photocatalyst design principle by using continuously adjustable band gap materials. This is demonstrated using first-principles calculations, and is subsequently validated by direct measurements of photocatalytic activity of ZnxCd1-xS-reduced graphene oxide (RGO) heterojunction as a proof-of-concept photocatalyst. Tuning the Zn/Cd ratio and/or the reduction degree of RGO can result into three types of heterojunction, and different conduction and valence band offsets by varying their band gap and positions of band edges. The modulation of efficient electron-hole separation at the interface is manifested by the consistency of calculated and experimental optical absorbance, and enhanced photocatalytical activity of ZnxCd1-xS-RGO heterojunction. This results can also rationalize the available experimental results of RGO-based composites. This design principle is broadly applicable to the development of other heterojunction materials ranging from photocatalysts and solar cells to functional electronic devices through interfacial band alignment engineering.
关键词： band gap,photocatalytic activity,RGO,heterojunction,ZnxCd1-xS,photocatalyst,first-principles calculations
更新于2025-09-23 15:21:21
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Buchwald-Hartwig Coupling at the Naphthalenediimide Core: Access to Dendritic, Panchromatic NIR Absorbers with Exceptionally Low Band Gap
摘要： The ?rst successful Buchwald?Hartwig reaction at the naphthalenediimide core is reported, leading to the coupling of diverse secondary aromatic amines including dendritic donors. The G1-dendrimer-based donor exhibit blackish color, providing access to black absorbing systems. λ onset values up to 1070 nm was achieved, which is the maximum from a single NDI sca?old. These dyes also manifest multielectron reservoir properties. A total of eight-redox states with a band gap of ～0.95 eV was accomplished.
关键词： dendritic donors,low band gap,black absorbing systems,Buchwald?Hartwig reaction,naphthalenediimide,multielectron reservoir properties,NIR absorbers
更新于2025-09-23 15:21:21