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Full Activation of Boron in Silicon Doped by Self-assembled Molecular Monolayers
摘要： The self-assembled molecular monolayer (SAMM) doping has great potential in state-of-the-art nanoelectronics with unique features of atomically precision and non-destructive doping on complex 3D surfaces. However, it was recently found that carbon impurities introduced by the SAMM significantly reduced the activation rate of phosphorus dopants by forming majority carrier traps. Developing a defect-free SAMM doping technique with a high activation rate for dopants becomes critical for reliable applications. Considering that susbstitutional boron does not interact with carbon in silicon, herein we employ Hall measurements and secondary ion mass spectrometry (SIMS) to investigate boron activation rate, and then deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) to analyze defects in boron-doped silicon by the SAMM technique. Unlike the phosphorus dopants, the activation rate of boron dopants is close to 100%, which is consistent with the defect measurement results (DLTS and MCTS). Only less than 1% boron dopants bind with oxygen impurities, forming majority hole traps. Interestingly carbon-related defects in form of CsH and CsOH act as minority trap states in boron-doped silicon which will only capture electrons. As a result, the high concentration of carbon impurities have no impact on the activation rate of boron dopants.
关键词： boron-doped silicon,Full activation,molecular monolayer doping,carbon-related defects,minority carrier trap
更新于2025-09-12 10:27:22
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Structural stability and energy levels of carbon-related defects in amorphous SiO <sub/>2</sub> and its interface with SiC
摘要： We report the density-functional calculations that systematically clarify the stable forms of carbon-related defects and their energy levels in amorphous SiO2 using the melt-quench technique in molecular dynamics. Considering the position dependence of the O chemical potential near and far from the SiC/SiO2 interface, we determine the most abundant forms of carbon-related defects: Far from the interface, the CO2 or CO in the internal space in SiO2 is abundant and they are electronically inactive; near the interface, the carbon clustering is likely and a particular mono-carbon defect and a di-carbon defect induce energy levels near the SiC conduction-band bottom, thus being candidates for the carrier traps.
关键词： melt-quench technique,amorphous SiO2,carbon-related defects,density-functional calculations,SiC/SiO2 interface
更新于2025-09-10 09:29:36