- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Charge-transport layer engineering in perovskite solar cells
摘要： Photovoltaic (PV) technology that directly converts the solar energy into electrical energy, is regarding as one of the most promising utilization technologies of renewable and clean energy sources. Nowadays, developing low-cost and highly efficient PV technology is a hot research topic both for academia and industry. In this context, perovskite solar cells (PSCs) with metal halide perovskites [ABX3, A = CH3NH3+ (MA+), or CH(NH2)2+ (FA+), Cs+; B = Pb2+, Sn2+; X = Cl?, Br?, I?] as light harvesting material, is in the spotlight due to its easy fabrication process and high power conversion efficiency (PCE) [1,2]. To date, the certified PCE has been already pushed up to 25.2% (https://www.nrel.gov/pv/module-efficiency.html), making PSC an auspicious candidate for a new generation of photovoltaics. In future days, how to eliminate the non-essential charge carrier recombination in the device, further push the PCE approaching the Shockley-Queisser theoretical efficiency limit (~35%) and enhance the device stability, will be formidable challenges and the focus in the next stage of research work.
关键词： electron transport layer,hole transport layer,charge-transport layer,perovskite solar cells,power conversion efficiency
更新于2025-09-23 15:19:57
-
Numerical simulation of charge transport layer free perovskite solar cell using metal work function shifted contacts
摘要： Perovskite solar cells (PSCs) are one of the fastest emerging photovoltaic (PV) technology at the research level. To achieve higher conversion efficiencies from PSCs, a perovskite absorber layer is stacked between two charge transport layers (CTLs) such as electron and hole transport layers. However, fabrication of defect-free multi-layered PSC is a challenging task, and the presence of CTL and their corresponding interfaces with perovskite enhances the recombination, hysteresis and led to poor stability. Here, in this work, CTL free (i.e., electron and hole transport layer free) PSC is simulated using metal work function shifted contacts. The device presented in this work is free from transport layers and the collection process is with the help of an electric field across the perovskite layer. The electric field is created by using two metals of different work function, i.e., 4.35eV and 5.25eV (can be realized using self-assembled monolayers technique) used as cathode and anode respectively. Simulated CTL free PSC exhibits JSC=17.8 mA.cm-2, VOC=712 mV, FF=68.5% and PCE=8.7% with 250 nm thick perovskite absorber layer having bulk defect density of 2.5x1013 cm-3. Further, a comprehensive study is done in terms of front electrode work function (FEW), front electrode transparency, perovskite thickness and bulk defect density to understand the impact of these parameters on the performance of the device. To understand the behavior of the device, the energy band diagram profile is examined. Reported results show that higher metal work function difference between front and back electrode, higher transparency, and thick perovskite layer with low defect density results in better PV effect in CTL free PSC. Optimized CTL free PSC device delivers JSC=19.9 mA.cm-2, VOC=726 mV, FF=66.8% and PCE=9.7%. The design simulated in this work opens up a new window for next-generation interface defect and hysteresis-free PSC.
关键词： simulation,absorption,SCAPS-1D.,charge transport layer,metal work function,Perovskite solar cell,transparency
更新于2025-09-19 17:13:59
-
Hysteresis-free Planar Perovskite Solar Cells with a Breakthrough Efficiency of 22% and Superior Operational Stability over 2000 Hours
摘要： Understanding the transport loss and the ways to improving opto-electronic properties of the charge transporting layers is critical to fabricate highly efficient, long-term stable, and hysteresis-free perovskite solar cells (PSCs). Herein, we report success in suppressing hysteresis and boosting the performance of operationally stable planar solar cells using ruthenium (Ru) doped tin oxide (SnO2) electron transport layer (ETL) and Zn-TFSI2 doped spiro-OMeTAD hole transport layer (HTL). Apparently, the incorporation of Ru drastically shifted the Fermi level of SnO2 ETL upward, which provides a facile route to tailor the ETL/perovskite band-offset to improve built-in electric field of devices for improving VOC and electron extraction, simultaneously. Meanwhile, rapid injection of the photo-generated electrons from perovskite into ETL with reduced trap density is also observed when Ru doped SnO2 is employed as ETL. On the other hand, the conception of Zn-TFSI2 incorporation into HTL not only further boost the photovoltaic performance but also prolong the photo-stability of the devices. Consequently, a breakthrough efficiency of 22% (average 21.8%) with JSC of 24.6 mA cm?2, VOC of 1.15 V and FF of 0.78 has been obtained in planar-type PSCs with a loss in efficiency of only ~3% at maximum power point tracking (MPPT) over 2000?h.
关键词： Ruthenium doping,Charge transport layer,SnO2,Zn-TFSI2,Stability
更新于2025-09-16 10:30:52