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Reversed Crystal Growth
摘要： In the last decade, a reversed growth route has been found in many crystal growth processes. In these systems, a single crystal does not develop from a single nucleus. The precursor molecules/ions or nanocrystallites aggregate into some large amorphous or polycrystalline particles. Multiple-nucleation on the surface of the amorphous particles or surface re-crystallization of the polycrystalline particles then takes place, forming a single crystal shell with a regular morphology. Finally, the crystallization extends from the surface to the core to form single crystals. This non-classical crystal growth route often results in some special morphologies, such as core-shell structures, hollow single crystals, sandwich structures, etc. This article gives a brief review of the research into reversed crystal growth and demonstrates that investigation of detailed mechanisms of crystal growth enables us to better understand the formation of many novel morphologies of the crystals. Some unsolved problems are also discussed.
关键词： nucleation,crystal growth,core-shell structure,crystal morphology,hollow crystal,electron microscopy
更新于2025-09-23 15:23:52
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High throughput MOVPE and accelerated growth rate of GaAs for PV application
摘要： We present the feasibility of metalorganic vapor phase epitaxy (MOVPE) with extremely high-speed growth of GaAs for solar cell applications. The growth rate was increased up to 120 μm/h, and exhibited an almost linear relationship with the amount of supplied trimethylgallium (TMGa). The thickness variation and doped carrier concentration of GaAs grown at 90 μm/h were comparable to those of conventionally grown GaAs at a lower growth rate. The potential for reducing the V/III supply ratio was investigated to reduce the material cost. Non-doped GaAs wafers were grown at the accelerated growth rate of 90 μm/h, with various V/III ratios. The growth rate of GaAs increased by 20% when the V/III ratio was decreased from 40 to 5. In low temperature photo-luminescence (PL) measurement, significant change in PL spectra was not observed, indicating that there was no significant change in quality. The light-power conversion efficiency was almost comparable for V/III ratios from 10 to 40 whereas that at the lowest V/III ratio of 5 was degraded. Photovoltaic (PV) solar cells of GaAs were fabricated with various growth condition. It is found that the performance of the cells grown at 90 μm/h were comparable with previous results.
关键词： A3. Metalorganic vapor phase epitaxy,B2. Semiconducting GaAs,B3. Solar cells,A1. Crystal morphology
更新于2025-09-23 15:23:52
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Morphological study of InGaN on GaN substrate by supersaturation
摘要： The morphology of thin InGaN layers grown on c-plane GaN substrates by metalorganic vapor phase epitaxy (MOVPE) has been studied by atomic force microscopy. Three different morphologies appeared, a stepped surface, large flat two-dimensional (2D) islands and small high three-dimensional (3D) dots. Low growth temperature and high growth rate (i.e. increased vapor supersaturation) changed the InGaN morphology from steps to 2D islands and then 3D dots (when exceeding the critical thickness for 3D dots). Larger miscut angle of GaN substrate changed the morphology from 2D islands to step by decreasing the surface supersaturation of individual terraces. InGaN layers with a stepped morphology had the highest internal quantum efficiency at similar InN mole fraction. InGaN grown on GaN substrate more easily achieved a stepped morphology compared to InGaN on GaN/sapphire templates.
关键词： A3. Metalorganic vapor phase epitaxy,B2. Semiconducting III-V materials,A1. Crystal morphology,B1. Nitride
更新于2025-09-23 15:22:29
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Hetero-Orientation Epitaxial Growth of TiO2 Splats on Polycrystalline TiO2 Substrate
摘要： In the present study, the effect of titania (TiO2) substrate grain size and orientation on the epitaxial growth of TiO2 splat was investigated. Interestingly, the splat presented comparable grain size with that of substrate, indicating the hereditary feature of grain size. In addition, hetero- and homo-orientation epitaxial growth was observed at deposition temperatures below 400 °C and above 500 °C, respectively. The preferential growth of high-energy (001) face was also observed at low deposition temperatures (≤ 400 °C), which was found to result from dynamic nonequilibrium effect during the thermal spray deposition. Moreover, thermal spray deposition paves the way for a new approach to prepare high-energy (001) facets of TiO2 crystals.
关键词： hetero-orientation epitaxial growth,preferential growth,crystal morphology,homo-orientation epitaxial growth,deposition temperature,hereditary feature
更新于2025-09-23 15:22:29
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Stepped morphology on vicinal 3C- and 4H-SiC (0001) faces: A Kinetic Monte Carlo study
摘要： Stepped morphologies on vicinal 3C- and 4H-SiC (0001) surfaces with the miscut toward [1100] or [1120] directions have been studied with a three-dimensional kinetic Monte Carlo model. In the model, a three-dimensional lattice mesh was established based on the crystal lattice of 3C-and 4H-SiC to fix the positions of atoms and interatomic bonding. Periodic boundary conditions were applied in the lateral direction while helicoidal boundary conditions were used in the direction of crystal growth. Events, such as adatoms attachment, detachment and interlayer transport at the step edges, and adatoms adsorption and diffusion on the terraces were considered in the model. Effects of Ehrlich-Schwoebel barriers at downward step edges and incorporation barriers at upwards step edges were also considered. Moreover, the atoms of silicon and carbon were treated as the minimal diffusing species independently to achieve more elaborate information for the behavior of atoms in the crystal surface. The simulation results showed that multiple-height steps were formed on the vicinal 4H-SiC (0001) surfaces, whereas single bilayer-height stepped morphologies were observed on the vicinal 3C-SiC (0001) surfaces. Furthermore, zigzag shaped edges were observed for both of 3C- and 4H-SiC (0001) surfaces with the miscut toward [1120] direction. At last, the formation mechanism of the stepped morphology was also analyzed.
关键词： Computer simulation,Crystal morphology,Silicon Carbide,Surfaces,Kinetic Monte Carlo Model
更新于2025-09-23 15:21:01
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Influence of trimethylaluminum predoses on the growth morphology, film-substrate interface, and microstructure of MOCVD-grown AlN on (111)Si
摘要： Aluminum nitride (AlN) was deposited on (111) silicon by metalorganic chemical vapor deposition after varied trimethylaluminum predoses. Growth morphologies, film-substrate interfaces, and film microstructures were examined using scanning electron microscopy, atomic force microscopy, X-ray diffraction, and transmission electron microscopy. In samples grown with predoses, lateral growth was observed over faceted "patches" formed during the predose. Three-dimensional growth was observed to seed from small islands on the surface of these patches and eventually overgrow them. The three-dimensional growth mode was similar to that observed when AlN was grown without a predose, resulting in similar morphologies in all films, regardless of predose, after the islands coalesced. The AlN-silicon interface was found to be predominantly amorphous when no predose was used. However, narrow regions were observed over which the film was in atomic registry with the substrate. This indicates AlN nucleates in epitaxy with the substrate and amorphous silicon nitride forms between nucleation sites due to ammonia exposure. Films grown with predoses had structurally abrupt interfaces, suggesting aluminum within the observed patch features inhibits the reaction between ammonia and silicon at the onset of growth. A structure distinct from both wurtzite AlN and diamond cubic silicon was observed at the substrate interface in films grown with a predose, consistent with either zinc blende AlN or a strained Si/Al alloy. A mosaic microstructure was observed in all films, grown with or without predoses, which consisted of sub-boundaries formed by clusters of threading dislocations. Threading dislocations, separated by hundreds of nanometers, were found to be tilted along common directions, providing evidence for a dislocation bending mechanism possibly enhanced by the predose.
关键词： Defects,Crystal morphology,Metalorganic chemical vapor deposition,Semiconducting aluminum compounds,Nucleation,Nitrides
更新于2025-09-19 17:15:36
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Evolving Crystal Morphology of Potassium Chloride Controlled by Optical Trapping
摘要： Dynamic morphology evolution of potassium chloride (KCl) crystal was demonstrated by surface optical trapping with a focused continuous-wave near-infrared laser. Optical trapping at an air/solution interface triggered the crystallization, and then the dynamic change in crystal morphology was observed in real time. We observed three different crystal morphologies of needle, rectangle, and cubic at the early stage of crystallization. As the laser power increases, the probability of generation of a cubic crystal increases, especially upon the irradiation with linear polarization. We also found laser-polarization-dependent morphology evolution by the continuous irradiation to the generated crystals. Upon linearly-polarized laser irradiation, the stepwise morphology evolutions from needle, rectangle, and eventually to cubic, which is an equilibrium shape of KCl crystal. While, circularly-polarized laser irradiation only induced morphology evolution from needle to rectangle, without morphology change into cubic, because the rectangle crystal was dissolved while crystal rotating. It was made possible to observe such a unique morphological evolution due to the spatiotemporal controllability of our crystallization method. The dynamics and mechanism of these intriguing phenomena are discussed from the perspective of a dense cluster domain formed by optical trapping before nucleation.
关键词： laser polarization,potassium chloride,crystal morphology,optical trapping,surface crystallization
更新于2025-09-19 17:13:59
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Study of indium and antimony incorporation into SnS2 single crystals
摘要： Pure SnS2, 5% In-doped SnS2, 15% In-doped SnS2, 5% Sb-doped SnS2 and 15% Sb-doped SnS2 single crystals are grown in closed sealed quartz ampoule by direct vapour transport technique. The energy dispersive analysis of X-rays analysis of all the five as-grown single crystals showed them to be stoichiometric. The X-ray diffraction analysis showed that all the crystals are single phase possessing a hexagonal structure with (001) preferential orientation. The surface morphology of as-grown single crystals studied by scanning electron microscopy and optical microscopy showed crystal growth is by layer growth mechanism supported by screw dislocation. Selected area electron diffraction showed hexagonal spot pattern confirming the single crystalline nature of the crystals. Optical bandgap of the as-grown crystals determined by UV-Vis-NIR spectroscopy showed that the single crystals possess direct optical bandgap and the value varied between 1.89 and 2.31 eV. The photoluminescence spectra study showed the presence of six peaks. The Raman spectra showed SnS2 type the A1g vibrational mode and shifting in A1g vibrational mode with In and Sb doping. The results are elaborated in details.
关键词： Single crystal growth,Doping,Characterization,Crystal morphology,X-ray diffraction,Crystal structure
更新于2025-09-10 09:29:36
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MORPHOLOGY OF DIAMOND SINGLE CRYSTALS GROWN IN THE Fe-Co-Mg-C SYSTEM
摘要： Diamond single crystals in a Fe-Co alloy with addition of 5 and 10 wt. % Mg by temperature gradient method were grown and their morphology was studied. For crystals obtained in the Fe-Co alloy with 5 wt. % Mg, the faces of octahedron, cube, rhomb-dodecahedron and tetragon-trioctahedron {311} were observed. When the magnesium content in the solvent-alloy increase up to 10 wt. % under the same growth conditions the tetragon-trioctahedron {311} faces on diamond crystals were absent. The topography of diamond crystals faces grown in different systems indicates that octahedron and cube are active growth forms with their growth pyramids, and rhomb-dodecahedron and tetragon-trioctahedron {311} are forms of passive growth.
关键词： A1.Crystal morphology,B1. Diamond,A2. Single crystal growth,A2. Growth from high temperature solutions
更新于2025-09-10 09:29:36
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Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
摘要： Wafer trays with different gaps (the distance between the top of the pocket and the bottom of the wafer) were used to grow InGaN/GaN multiple quantum wells (MQWs) in a horizontal metalorganic vapor phase epitaxy (MOVPE) reactor. The numerical reactor simulation revealed that at the similar surface temperature the gas phase temperature around the wafer increases due to an increased wafer tray temperature. This increased gas phase temperature is expected to increase the effective V/III ratio by enhanced NH3 decomposition. Photoluminescence (PL) intensities of long-wavelength MQWs increased at the same indium content by the enhanced gas phase temperature, while the emission became narrow. This is related to a smoother topography at higher gas phase temperatures.
关键词： A3. Metalorganic vapor phase epitaxy,B2. Semiconducting III-V materials,A1. Crystal morphology,B1. Nitride
更新于2025-09-04 15:30:14