摘要： Pure SnS2, 5% In-doped SnS2, 15% In-doped SnS2, 5% Sb-doped SnS2 and 15% Sb-doped SnS2 single crystals are grown in closed sealed quartz ampoule by direct vapour transport technique. The energy dispersive analysis of X-rays analysis of all the five as-grown single crystals showed them to be stoichiometric. The X-ray diffraction analysis showed that all the crystals are single phase possessing a hexagonal structure with (001) preferential orientation. The surface morphology of as-grown single crystals studied by scanning electron microscopy and optical microscopy showed crystal growth is by layer growth mechanism supported by screw dislocation. Selected area electron diffraction showed hexagonal spot pattern confirming the single crystalline nature of the crystals. Optical bandgap of the as-grown crystals determined by UV-Vis-NIR spectroscopy showed that the single crystals possess direct optical bandgap and the value varied between 1.89 and 2.31 eV. The photoluminescence spectra study showed the presence of six peaks. The Raman spectra showed SnS2 type the A1g vibrational mode and shifting in A1g vibrational mode with In and Sb doping. The results are elaborated in details.