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Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells
摘要： An AlGaN-based deep ultraviolet laser diode with convex quantum wells structure is proposed. The advantage of using a convex quantum wells structure is that the radiation recombination is significantly improved. The improvement is attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes, which results in an increased hole injection efficiency and a decreased electron leakage into the p-type region. Particularly, comparisons with the convex quantum barriers structure and the reference structure show that the convex quantum wells structure has the best performance in all respects.
关键词： AlGaN,radiation recombination,convex quantum wells,electron leakage,deep ultraviolet laser diode,hole injection efficiency
更新于2025-09-23 15:19:57
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A 271.8 nm deep-ultraviolet laser diode for room temperature operation
摘要： We present a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength. The laser structure was grown on the (0001) face of a single-crystal aluminum nitride substrate. The measured lasing wavelength was 271.8 nm with a pulsed duration of 50 ns and a repetition frequency of 2 kHz. A polarization-induced doping cladding layer was employed to achieve hole conductivity and injection without intentional impurity doping. Even with this undoped layer, we were still able to achieve a low operation voltage of 13.8 V at a lasing threshold current of 0.4 A.
关键词： room temperature operation,aluminum nitride substrate,deep-ultraviolet,laser diode,polarization-induced doping
更新于2025-09-12 10:27:22