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The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature
摘要： The main electrical characteristics of current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature of the Re/n-type Si Schottky barrier diodes prepared by pulsed laser deposition (PLD) method have been examined. The values of the basic electrical properties such as forward saturation current (Io), ideality factors (n), barrier heights (Фbo), recti?cation ratio (RR) and series resistances (RS) were obtained from I-V and C-V measurements using di?erent calculation methods. At low voltages (V ≤ 0.3 V), the electrical conduction was formed to take place by thermionic emission, whereas at high voltages (V > 0.3 V), a space charge limited conduction mechanism was shown. Furthermore, the interface state densities (NSS) as a function of energy distribution (ESS- EV) was obtained from the I-V data by taking into account the bias dependence of the e?ective barrier height (Φb) for the Re/n-type Si Schottky barrier diodes.
关键词： interface states,surface potential,recti?cation ratio,Electrical parameters,series resistance
更新于2025-09-23 15:21:01
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Short-term light soaking effect on dye-sensitized solar cells
摘要： Dye-sensitized solar cells (DSSCs) are one of the most promising third generation solar cells and have been regarded as a competitive alternative to the conventional silicon-based photovoltaic devices due to their relatively low production cost. Light soaking effect is an intriguing phenomenon that exists in DSSCs, which refers to the enhancement of the electrical parameters in the cells after being exposed to light soaking. In this paper, we report on the variation in the electrical parameters of DSSCs under continuous exposure to a simulated solar irradiation for a period up to 6h. Increments of Jsc and Voc in DSSC were observed after 6h of light soaking, which led to improved efficiency from 3.87% to 4.50%. The improvements may be ascribed to the formation of electron trapping states below the TiO2 conduction band edge, which facilitated the charge carrier transport.
关键词： electrical parameters,TiO2 conduction band,Dye-sensitized solar cells,efficiency,light soaking effect
更新于2025-09-23 15:19:57
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Spatially Resolved Electrical Parameters of Si Solar Cells Using Quantitative Lock-In Carrierography
摘要： Electrical parameters (saturation current density and local series resistance) are critical to solar cells. In this work, 2-dimensional finite-element simulations were carried out to study the influence of local distributions of electrical parameters and broken fingers on luminescence images at various working conditions. The relationship between luminescence intensity and local diode implied voltage was identified by simulation results and also by lock-in carrierography/photoluminescence measurements on a silicon solar cell. Spatially resolved saturation current density (J0) and local series resistance (Rs) of the Si solar cell were realized by LIC. Influences of broken fingers on J0 and Rs were discussed. The LIC measurements were in accordance with 2D simulation results. The experiment results show that LIC, as a quantitative luminescence-based methodology, can be able to spatially resolve electrical parameters of silicon solar cells and PV modules.
关键词： Electrical parameters,Lock-in carrierography,Silicon solar cell,2D simulation
更新于2025-09-19 17:13:59
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Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell
摘要： The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of di?erent ?uences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the e?ect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the e?ect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these e?ects. In our study, we explain fundamentally the causes of the e?ects of the irradiation on the solar cells. Taking into account the empirical formula of di?usion length under the e?ect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then in?uence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion e?ciency). It appears also in this study that, at low ?uence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.
关键词： silicon solar cell,proton radiation,diffusion length,electrical parameters,carrier distribution,junction dynamic velocity
更新于2025-09-16 10:30:52
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Electrical Parameters of a Laser Beam Channel in the Atmosphere. II
摘要： Results of measurements of the conductivity and electric field strength in the laser radiation propagation channel and near it are presented. An experimental setup and measurement scheme are described. The data have been obtained in the prebreakdown regime. The dependences of the laser-induced field strength on the laser radiation power and the optical characteristics of the propagation channel are investigated. The feasibility of ionization channel diagnostics using the electro-optical effects in the atmosphere is shown.
关键词： laser radiation,propagation channel,electrical parameters,optical breakdown
更新于2025-09-11 14:15:04