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[IEEE 2017 IEEE International Integrated Reliability Workshop (IIRW) - Fallen Leaf Lake, CA (2017.10.8-2017.10.12)] 2017 IEEE International Integrated Reliability Workshop (IIRW) - Silicon dioxide degradation in strongly non-uniform electric field
摘要： The new experimental evidence of field-induced trap generation in the tunnel oxide of SuperFlash? memory cells has been presented. It was shown that the negative voltage stress generates the highest local electric field in the oxide close to the floating gate tip. The effect of electric stress on the degradation of tunneling characteristics has been studied for the cells with the different tunneling geometry. The reliability aspects of field-induced trap generation are discussed. It has been concluded that the analyzed degradation mechanism is not critical for the SuperFlash technology.
关键词： floating gate,program-erase cycling endurance,memory reliability,oxide degradation,electron tunneling,Flash memory,electron trapping
更新于2025-09-23 15:23:52
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Carrier Transport Mechanisms Underlying the Bidirectional VTH Shift in p-GaN Gate HEMTs Under Forward Gate Stress
摘要： The threshold voltage (VTH) instability of p-GaN/AlGaN/GaN HEMTs was investigated under forward gate stress. A unique bidirectional VTH shift (ΔVTH) with the critical gate voltage (VG) of 6 V was observed. The carrier transport mechanisms underlying the ΔVTH were extensively investigated through the voltage-dependent, time-resolved, and temperature-dependent gate current. The gate current is decomposed into electron and hole current in three distinct regions with respect to VG, which are off-state for VG < 1.2 V (VTH), on-state for 1.2 V < VG < 5 V and “gate-injected” region for VG > 5 V. In off-state, the electrons were thermally activated and transport towards the gate, while electron-trapping governed by the space charge limited conduction (SCLC) in AlGaN barrier was observed in on-state and “gate-injected” region. Such an electron-trapping effect results in the positive VTH shift for VG < 6 V. Meanwhile, the marginal hole transport from gate by thermal activation was also captured by gate current, which features negligible impact on VTH. However, for VG > 6 V, a drastic hole injection triggered by high VG takes place that causes subsequent hole-trapping in AlGaN barrier and hole-injection into GaN buffer. The injected holes enhance the positive charge in the gate region and turned the positively shifted VTH into a negative shift.
关键词： hole injection,threshold voltage shift,p-GaN HEMT,electron trapping,carrier transport mechanisms,gate stress
更新于2025-09-23 15:22:29
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Efficient, stable and high color rendering index white polymer light-emitting diodes by restraining the electron trapping
摘要： Superior solid-state light source should possess not only a high device efficiency but also high color rendering index (CRI) and excellent color stability. Here, we obtained efficient, stable and high CRI white polymer light-emitting diodes (WPLEDs) through applying the well-chosen trichromatic polymers and restraining the electron trapping. The trichromatic polymers all possess the similar mainchain units, their EL spectra shows an equidistant distribution. Detailed studies revealed that the part of green and red emission in the WPLED derive from the electron trapping which led to the current-dependent spectra. Applied proper electron transporting layer can enhance the direct electron injection which resulted in the electron trapping being restrained and improving the color stability. The optimized WPLED got a LEmax of 10.17 cd A-1 and CRI of 92, the CIE coordinates (0.346, 0.345) almost keep the same with the operating current density increasing from 10.53 mA cm-2 to 263.16 mA cm-2.
关键词： Electron trapping,Polymer blends,WPLED,Fluorescence
更新于2025-09-23 15:21:01
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Two-step Degradation of a-InGaZnO Thin Film Transistors under DC Bias Stress
摘要： A unified explanation is proposed to consistently explain the two-step degradation of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) under DC positive bias temperature instability (PBTI) stress without or with different drain stress voltages (Vds). For PBTI stress without stress Vds, this initial negative Vth shift is believed to be induced by donor-like defect states corresponding to H2O molecule and intrinsic defects, while for PBTI stress with stress Vds, the negative shift is believed to be induced by donor-like defect states corresponding to oxygen vacancies. The gate-bias-induced electron trapping mechanism is responsible for positive Vth shift. These transitions from negative to positive Vth shift are resulted from the competition between the donor-like states creation and electron trapping.
关键词： PBTI,donor-like states creation,two–step degradation,electron trapping,IGZO TFTs,H2O molecule
更新于2025-09-23 15:21:01
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Interaction between Bi Dopants and Intrinsic Defects in LiNbO <sub/>3</sub> from Local and Hybrid Density Functional Theory Calculations
摘要： The interactions between Bi dopants including Bi-substituting Li (BiLi) and Bi-substituting Nb (BiNb) and the intrinsic antisite defects (NbLi) and Li vacancies (VLi) in LiNbO3 are investigated using local and hybrid density functional theories. Three charge-compensated defect clusters, BiLi4+ + NbLi4+ + 8VLi-, BiLi4+ + 4VLi-, and BiLi0 + 4VLi- + BiNb4+, are modeled in this work to investigate the effects of the Bi concentration. The most stable cluster configurations, the Bi-doping stability in the clusters, and the electronic state interaction between Bi and intrinsic defects have been studied in detail. It is found that BiLi4+ has a stronger electron-capturing ability than NbLi4+ in Bi-doped congruent LiNbO3. The BiLi-doping-induced local lattice distortion and the electron-trapping behavior remain unchanged with increasing Bi-doping concentration. However, the position of the Bi defect states in the band gap is found to be shifted in congruent LiNbO3. This is mainly attributed to the large lattice relaxation induced by the large number of Li vacancies instead of the ionic level redistribution caused by the direct interaction between Bi and intrinsic defects.
关键词： LiNbO3,Bi dopants,lattice distortion,defect clusters,intrinsic defects,density functional theory,electron trapping
更新于2025-09-19 17:15:36
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Controlled synthesis of GaSe microbelts for high-gain photodetectors induced by the electron trapping effect
摘要： GaSe microbelts were successfully synthesized using Ga/Ga2Se3 as the precursor mixture, where excess Ga was required to serve as the metal catalyst. Meanwhile, a spontaneously oxidized surface amorphous oxide (GaOx) layer formed, which induced a built-in electric field perpendicular to the surface. Benefiting from this effect, a GaSe microbelt-based photodetector attained a high responsivity of B3866 A W(cid:2)1 and a photoconductive gain of up to B1.06 (cid:3) 104. This study sheds light on the controlled synthesis of microstructures and provides a device design concept for high-performance micro/nano optoelectronics.
关键词： high-gain,electron trapping effect,photodetector,GaSe microbelts
更新于2025-09-19 17:13:59
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Hybrid Analog/Digital Linearization of GaN HEMT-Based Power Amplifiers
摘要： In this paper, we describe a hybrid analog/digital linearization scheme for GaN high-electron-mobility transistor (HEMT)-based power ampli?ers that consists of a novel analog feedforward circuit and a conventional generalized memory polynomial (GMP) digital predistorter (DPD). The analog circuit implements a nonlinear ?lter that compensates the long-term memory effects observed in GaN HEMTs due to the self-biasing behavior caused by electron-trapping phenomena. Experimental tests demonstrate that this linearization scheme achieves a level of intermodulation distortion 6.8 dB better than what can be achieved with just the use of the GMP DPD. This level of distortion is in compliance with the linearity speci?cations for multicarrier Global System for Mobile communications base station transmitters.
关键词： Analog linearization,long-term memory effects,GaN high-electron-mobility transistor (HEMT),power ampli?er (PA) linearization,digital predistortion (DPD),electron trapping
更新于2025-09-09 09:28:46