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Degradation mechanisms of bias stress on nitride-based near-ultraviolet light-emitting diodes in salt water vapor ambient
摘要： Degradation mechanisms of nitride-based near-ultraviolet (near-UV) light-emitting diodes (LEDs) were systematically analyzed by applying forward- and reverse-bias stresses to them in a salt water vapor ambient. The surface temperature of the forward-bias stress sample was higher than that of the reverse-bias stress sample. The high temperature of the forward-bias stress sample accelerated the chemical reaction of the device structure with salt water vapors and led to faster degradation. Composition analyses of the sample surface and cross-section were conducted to investigate the failure mechanism. The analyses results indicated that the erosion of the indium–tin–oxide layer enhanced the diffusion of the conducting metal into the LED crystal. The proposed method can effectively characterize the quality of near-UV LEDs in a short duration.
关键词： failure mechanisms,bias stress,reliability,near-UV LEDs
更新于2025-09-19 17:13:59
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[IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - One-Gate Ratchet Single-Electron Pump: Device Failure Mechanisms
摘要： Electrical current standards based on the charge of the electron will become more important after the SI redefinition. Many of the best recent charge pump results have come in the one-gate ratchet pumping mode, but this mode is sometimes difficult to achieve. In this work, we discuss the likely reasons for this difficulty, and ways to overcome the difficulty.
关键词： single-electron metrology,One-gate ratchet charge pump,device failure mechanisms
更新于2025-09-10 09:29:36
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[ASME ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - San Francisco, California, USA (Monday 27 August 2018)] ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - Failure Mechanism Assessment of TO-247 Packaged SiC Power Devices
摘要： As the efficiency of power electronics becomes more important, the use of silicon carbide (SiC) devices in power electronics has shown several benefits in efficiency, blocking voltage and high temperature operation. In addition, the ability of SiC to operate at higher frequencies due to lower switching losses can result in reduced weight and volume of the system, which also are important factors in vehicles. However, the reliability of packaged SiC devices is not yet fully assessed. Previous work has predicted that the different material properties of SiC compared to Si could have a large influence on the failure mechanisms and reliability. For example, the much higher elastic modulus of SiC compared to Si could increase strain on neighboring materials during power cycling. In this work, the failure mechanisms of packaged Si- and SiC-based power devices have been investigated following power cycling tests. The packaged devices were actively cycled in 4.5 s heating and 20 s cooling at ΔT = 60 - 80 K. A failure analysis using micro-focus X-ray and scanning acoustic microscopy (SAM) was carried out in order to determine the most important failure mechanisms. The results of the analysis indicate that the dominant failure mechanism is wire bond lift-off at the device chip for all of the SiC-based devices. Further analysis is required to determine the exact failure mechanisms of the analyzed Si-based devices. In addition, the SiC-based devices failed before the Si-based devices, which could be a result of the different properties of the SiC material.
关键词： power cycling,SiC,power electronics,failure mechanisms,reliability
更新于2025-09-04 15:30:14