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Highly sensitive ultraviolet photodetectors based on single wall carbon nanotube-graphene hybrid films
摘要： An ultraviolet (UV) photodetector was fabricated by depositing single wall carbon nanotubes (SWCNTs) on the surface of a graphene field-effect transistor (GFET) with buried gate electrode structure. A photoresponsivity with a value as high as 204.5 A/W was obtained under a 365-nm LED light illumination with an incident power of 3.9 μW. The photoresponsivity of our photodetector is about four orders higher in magnitude than that of a recently reported UV photodetector, which is based on CNTs/graphene hybrid films with a photoresponsivity of 2.3 × 10?2 A/W. With increasing the source-drain voltage of the SWCNTs modified GFET, the photoresponsivity can be further enhanced. In addition, the photoresponsivity can also be tuned by applying a small gate voltage. This work provides a simple and feasible method to create highly sensitive UV photodetectors based on all-carbon hybrid films, which are important in many applications such as military surveillance, biomedical instrumentation and environmental monitoring.
关键词： Ultraviolet,Graphene field effect transistor,Photodetector,Single wall carbon nanotubes
更新于2025-09-19 17:13:59
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Remarkable improved photoelectric performance of SnS2 field-effect transistor with Au plasmonic nanostructures
摘要： The photoelectric devices developing towards the high integration and miniaturization in semiconductor industry can be pushed forward by the thriving research of two-dimensional layered metal dichalcogenides (2D-LMDs). SnS2 nanosheets have evident photoresponse to both ultraviolet and partial visible light, but only with a fair photoelectric performance limited by its atomic-layer thickness. Here we report a convenient and simple method to make a dramatic enhancement of the electrical and photoelectric performance of the SnS2 flake. By integrating SnS2 with Au plasmonic nanostructures, the photocurrent (Iph) increased by over 20 times. And the corresponding responsivity (R), light gain (G), and detectivity (D*) have been improved by ~2200%, 2200%, and 600%, respectively. The responsivity and detectivity of the Au NPs-SnS2 FET at 532 nm are 1125.9 A/W and 2.12×1011 Jones. Though being atomically thin, the hybrid SnS2 photodetector benefiting from local surface plasmonic resonance achieves an excellent photoelectric performance not normally possible with the pristine SnS2-only device.
关键词： 2D material,SnS2,field effect transistor,photodetector,plasmonic resonance
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Electron-Conductive, Hole-Blocking Contact for Silicon Solar Cells
摘要： This paper presents a simple mathematical expression to model the effect of statistical dopant fluctuations on threshold voltage (Vth) of junction field-effect transistors (JFETs). The random discrete doping (RDD) in the active device area is used to derive an analytical model to compute the standard deviation, σ Vth,RDD of the Vth-distribution for any arbitrary channel doping profiles. The model shows that the Vth-variability in JFETs depends on the active device area, channel doping concentration, and the depth of the channel depletion region of the gate/channel pn-junction. The model is applied to compute σ Vth,RDD for symmetric and asymmetric source/drain double-gate n-channel JFETs. The simulation results show that the model can be used for predicting Vth-variability in JFETs.
关键词： modeling threshold voltage variability,random discrete doping,process variability in JFETs,statistical dopant fluctuations,JFET threshold voltage variability,Junction field-effect transistor (JFET)
更新于2025-09-19 17:13:59
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Silicon Meets Graphene for a New Family of Near-Infrared Schottky Photodetectors
摘要： In recent years, graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions, opening the path to the realization of near-infrared photodetectors based on the internal photoemission effect where graphene plays the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.
关键词： photodetector,waveguide,silicon,graphene,field-effect transistor,internal photoemission effect
更新于2025-09-16 10:30:52
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Solution-processed P3HT:PbS based NIR Photodetector with FET Configuration
摘要： A near-infrared (NIR) solution-processed photodetector based on a mixture of PbS colloidal quantum dots (CQDs) and Poly(3-hexylthiophene) (P3HT) was presented. In a reverse field-effect transistor (FET) device configuration Au(S,D)/P3HT:PbS/PMMA/Al(G), uniform-sized and well-dispersed PbS CQDs were employed as NIR absorbing materials in the active layer. Meanwhile, the poly(methyl methacrylate) (PMMA) dielectric layer could be seen as an encapsulation to enhance the device stability. Herein, High “on/off” current ratio (Ion/Ioff) of 104 was obtained in dark, and the maximum photosensitivity (P) of 947 was gotten under 200 mW/cm2 980 nm illumination. When the irradiance reduced to 0.1 mW/cm2, the responsivity (R) and detectivity (D?) of the NIR photodetector reached 9.4 mA/W and 2.5×1011 Jones, respectively. Therefore, the P3HT:PbS hybrid FET-based NIR photodetector had shown both relatively high electrical and detecting performance, which provided an experimental foundation and method for the next fabrication of medical infrared detectors and sensors.
关键词： PbS colloidal quantum dots (CQDs),Near-infrared (NIR) photodetector,Poly(3-hexylthiophene) (P3HT),Field-effect transistor (FET)
更新于2025-09-16 10:30:52
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Model for electroluminescence in single-walled carbon nanotube field effect transistor under transverse magnetic field
摘要： Electroluminescence spectrum and radiative recombination rate of short channel single-walled carbon nanotube field effect transistor in presence of transverse magnetic field is calculated by using non-equilibrium Green’s function method. Significant enhancement in radiative recombination rate and red shift in electroluminescence spectrum are observed with increase in the strength of magnetic field. The band gap suppression estimated from energy position resolved local density of states calculation plays a dominant role in transport mechanism under the influence of external magnetic field. The tuning of electroluminescence spectrum of single-walled carbon nanotube by transverse magnetic field can be employed as nanoscale optical source in next generation optoelectronic and photonic devices.
关键词： electroluminescence,single-walled carbon nanotube,optoelectronics,radiative recombination rate,plasmonics,field effect transistor
更新于2025-09-16 10:30:52
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Nonvolatile photoelectric memory with CsPbBr3 quantum dots embedded in poly(methyl methacrylate) as charge trapping layer
摘要： Nonvolatile organic field-effect transistor (OFET) photoelectric memories have attracted tremendous attention due to special photoelectric memory mechanism and application area, such as image capture and light information storage. Unfortunately, conventional two-step preparation method of floating gate and tunneling layer is complex and not conducive to large-area. Here, a nonvolatile OFET photoelectric memory with perovskite quantum dots (QDs) embedded in poly(methyl methacrylate) (PMMA) as charge trapping layer is reported. The photoelectric memory can effectively accumulate and release photo-generated carriers during photo- or photoelectric programming operations and electrical erasing operation. The memory characteristics of the photoelectric memory are comparable to that of traditional memories with two-step preparation technique of floating gate and tunneling layer. In addition, the memory device presents well retention time and endurance property even after being exposed to air for two weeks. Hence, the memory using QDs/PMMA composites as charge trapping layer shows great potential for the application in photoelectric devices.
关键词： photoelectric memory,inorganic perovskite quantum dots,organic field-effect transistor
更新于2025-09-16 10:30:52
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The effect of phenylboronic acid-based self-assembled monolayers on theperformance of organic field-effect transistors (OFETs)
摘要： The dielectric/semiconductor interface is one of the most important components strongly affecting the performance of organic field-effect transistors (OFETs). To improve OFET parameters, we applied a series of phenylboronic acid derivatives as self-assembly molecules between dielectric and organic semiconductor layers. Device performance parameters, especially threshold voltage, current on/off ratio, and subthreshold slope, were improved. To elucidate the mechanism, dielectric/semiconductor interfaces were analyzed using atomic force microscope and contact angle techniques.
关键词： self-assembled monolayer,Interface modification,organic field-effect transistor
更新于2025-09-12 10:27:22
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A new ultra-scaled graphene nanoribbon junctionless tunneling field-effect transistor: proposal, quantum simulation, and analysis
摘要： In this paper, a new ultrascaled junctionless graphene nanoribbon tunnel field-effect transistor (JL GNRTFET) is proposed through a computational study. The quantum simulation approach is based on the resolution of the Schr?dinger equation using the mode space non-equilibrium Green’s function formalism coupled self-consistently with a Poisson equation in the ballistic limit. The proposed nanodevice is endowed with ungated region between the auxiliary and control gates as well as with a laterally graded channel doping in order to improve the switching performance of the ultrascaled junctionless GNRTFET. The performance assessment has included the IDS–VGS transfer characteristics, subthreshold swing, current ratio, intrinsic delay, and power-delay product. It has been found that the proposed ultrascaled junctionless GNR tunneling FET can provide improved switching performance than its conventional counterpart. The proposed strategy can be applied to improve similar ultrascaled junctionless tunneling field-effect transistors for the future digital electronics, where the high-performance and the aggressive downscaling should be in agreement.
关键词： Junctionless,Graphene nanoribbon (GNR),Tunneling field-effect transistor (TFET),Switching,Quantum simulation,Tunneling
更新于2025-09-11 14:15:04
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[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - Investigations on HI Reduced Graphene Based FET for Photon Detection
摘要： Reduced graphene oxide-based field effect transistor is fabricated and tested for detection of UV photons in 100-280 nm range. A novel technique is used for reduction of Graphene oxide. The fabricated device showed promising response to UV photons in terms of resistance change in rGO.
关键词： Reduced graphene oxide,UV photon detector,XRD,Field Effect Transistor,Raman spectroscopy
更新于2025-09-11 14:15:04