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Fabrication of Large Area Sub-200 nm Conducting Electrode Arrays by Self-Confinement of Spincoated Metal Nanoparticle Inks
摘要： Here, the fabrication of sub-200 nm metal wires from commercial silver inks with 50 nm particle size, 100 times narrower than with typical low-resolution ink-jet and screen printing in flexible electronics, is demonstrated. Using a combination of spincoating on prepatterned polymer substrates and flash lamp annealing, nanoparticles merge to wires featuring good electrical conductivity. With this method less than 150 nm thin wires can be generated from 2 μm wide or smaller V-grooves due to adapted dilution of particle content, self-confinement in V-grooves, shrinkage of line width during solvent evaporation, and sintering. After nanoimprinting, grooves made from PMMA are smoothened out by thermal reflow without affecting the wires. The resistivity of 300 μm long, 400 nm wires is similar to more conventional ink-jet printed wires with 10–50 μm widths.
关键词： self-confinement,V-groove,flash lamp annealing,nanoimprint lithography,silver nanoparticles
更新于2025-09-23 15:23:52
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Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and ms-Range Flash Lamp Annealing
摘要： With the demand of aggressive scaling in nanoelectronics, further progress can be realized by integration of high mobility semiconductors, such as III–V compound semiconductors, with complementary metal-oxide-semiconductor (CMOS) technology. In this study, the formation of shallow n–p and p–n junctions in GaAs utilizing ion implantation of S and Zn, respectively, followed by millisecond-range flash lamp annealing (FLA) is presented. The distribution of implanted elements obtained by secondary ion mass spectrometry (SIMS) shows that the FLA process can effectively suppress the diffusion of dopants. Simultaneously, the ms-range annealing is sufficient to recrystallize the implanted layer and to activate the dopants. Formation of p–n and n–p junctions is confirmed by current–voltage characteristics. The ratio of reverse to forward current can reach up to 1.7 × 10^7 in the n-GaAs:Zn case.
关键词： GaAs,ion implantation,shallow junctions,flash lamp annealing
更新于2025-09-23 15:23:52
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Epitaxial Mn <sub/>5</sub> Ge <sub/>3</sub> (100) layer on Ge (100) substrates obtained by flash lamp annealing
摘要： Mn5Ge3 thin films have been demonstrated as promising spin-injector materials for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter, we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at the ambient pressure. The single crystalline Mn5Ge3 is ferromagnetic with a Curie temperature of 283 K. Both the c-axis of hexagonal Mn5Ge3 and the magnetic easy axis are parallel to the Ge (100) surface. The millisecond-range flash epitaxy provides a new avenue for the fabrication of Ge-based spin-injectors fully compatible with CMOS technology.
关键词： epitaxial growth,spintronic devices,Ge (100) substrates,flash lamp annealing,Mn5Ge3
更新于2025-09-23 15:21:21
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Ultra-fast annealing manipulated spinodal nano-decomposition in Mn-implanted Ge
摘要： In the present work, millisecond-range flash lamp annealing is used to recrystallize Mn-implanted Ge. Through systematic investigations of structural and magnetic properties, we find that the flash lamp annealing produces a phase mixture consisting of spinodally decomposed Mn-rich ferromagnetic clusters within a paramagnetic-like matrix with randomly distributed Mn atoms. Increasing the annealing energy density from 46, via 50, to 56 J cm?2 causes the segregation of Mn atoms into clusters, as proven by transmission electron microscopy analysis and quantitatively confirmed by magnetization measurements. According to x-ray absorption spectroscopy, the dilute Mn ions within Ge are in d5 electronic configuration. This Mn-doped Ge shows paramagnetism, as evidenced by the unsaturated magnetic-field-dependent x-ray magnetic circular dichroism signal. Our study reveals how spinodal decomposition occurs and influences the formation of ferromagnetic Mn-rich Ge–Mn nanoclusters.
关键词： flash lamp annealing,ion implantation,spinodal decomposition,Ge–Mn nanoclusters
更新于2025-09-11 14:15:04
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Stabilization of ferroelectric Hf <sub/>x</sub> Zr <sub/>1?x</sub> O <sub/>2</sub> films using a millisecond flash lamp annealing technique
摘要： We report on the stabilization of ferroelectric HfxZr1?xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 ?C preheat step combined with millisecond flash lamp pulses, ferroelectric characteristics can be obtained which are comparable to that achieved using a 300 s 650 ?C rapid thermal anneal. X-ray diffraction, capacitance voltage, and polarization hysteresis analysis consistently point to the formation of the ferroelectric phase of HZO. A remanent polarization (Pr) of ～21 μC/cm2 and a coercive field (Ec) of ～1.1 MV/cm are achieved in 10 nm thick HZO layers. Such a technique promises a new alternative solution for low thermal budget formation of ferroelectric HZO films.
关键词： low thermal budget,ferroelectric HfxZr1?xO2 films,remanent polarization,ferroelectric phase,millisecond flash lamp annealing,coercive field
更新于2025-09-04 15:30:14