[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

摘要： The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while ?ll factors (FF) are above 80%. At one-sun illumination, reducing one junction’s bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% ef?ciency loss). These results demonstrate the potential of the HBTSC concept to produce high-ef?ciency independently connected double-junction solar cells.