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An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
摘要： Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga2O3 semiconductor have been analyzed. And the recent investigations on the Ga2O3-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga2O3-based SBD for power electronics application has been analyzed.
关键词： Breakdown electric field,Baliga’s figure of merit,On-resistance,Ultrawide bandgap semiconductor,Gallium oxide (Ga2O3),Power device,Schottky barrier diode (SBD)
更新于2025-09-23 15:22:29
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Gas sensing performance of GaOOH and β-Ga<sub>2</sub>O<sub>3</sub> synthesized by Hydrothermal method: A comparison
摘要： Gallium Oxy Hydrate (GaOOH) and β-Ga2O3 nanostructures in submicron scale have been synthesized at low temperature by surfactant-free hydro-thermal method. First, GaOOH has been synthesized using Gallium nitrate anhydrate, Ammonium hydroxide as precursors and double distilled water as solvent. As obtained GaOOH powders have been characterized by XRD, FE–SEM, UV–VIS, Thermo Gravimetric Analysis, I-V characteristics and BET surface analysis in order to reveal their structural, morphological, optical, thermal, electrical and surface properties. FE-SEM micrographs confirm the rod like and needle like morphologies of GaOOH and β- Ga2O3 samples, respectively. Porous nature of the samples observed through BET and BJH analyses. Synthesized GaOOH and β-Ga2O3 powders have been subjected to room temperature CO2 gas sensing in the range, 2000 ppm – 10000 ppm. GaOOH showed quick response of 80 s and fast recovery of 129 s at 8000 ppm while β-Ga2O3 showed quick response of 52 s at 8000 ppm and faster recovery of 98 s at 4000 ppm. Also, the repeatability studies were done for GaOOH and β-Ga2O3 films by exposing to different CO2 concentrations for a period of 6 consecutive days. β-Ga2O3 showed enhanced CO2 sensing response than that of GaOOH due to its better structural, electrical, morphological and surface properties.
关键词： Gallium Oxide (Ga2O3),Gallium Oxide Hydroxide (GaOOH),Hydrothermal method,Characterization,Room temperature CO2 sensing
更新于2025-09-23 15:21:21
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Progress of power field effect transistor based on ultra-wide bandgap Ga <sub/>2</sub> O <sub/>3</sub> semiconductor material
摘要： As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (~ 4.8 eV) and large Baliga’s figure of merit (BFOM) of Ga2O3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga2O3 single crystal, and review the recent research process of Ga2O3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga2O3 is preliminary revealed. Finally, the prospect of the Ga2O3 based FET for power electronics application is analyzed.
关键词： ultra-wide bandgap semiconductor,field effect transistor (FET),power device,gallium oxide (Ga2O3)
更新于2025-09-19 17:15:36
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Perspective: Ga <sub/>2</sub> O <sub/>3</sub> for ultra-high power rectifiers and MOSFETS
摘要： Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics with capabilities beyond existing technologies due to its large bandgap, controllable doping, and the availability of large diameter, relatively inexpensive substrates. These applications include power conditioning systems, including pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors, and advanced power management and control electronics. Wide bandgap (WBG) power devices offer potential savings in both energy and cost. However, converters powered by WBG devices require innovation at all levels, entailing changes to system design, circuit architecture, qualification metrics, and even market models. The performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors benefits from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. Reverse breakdown voltages of over 2 kV for β-Ga2O3 have been reported, either with or without edge termination and over 3 kV for a lateral field-plated Ga2O3 Schottky diode on sapphire. The metal-oxide-semiconductor field-effect transistors fabricated on Ga2O3 to date have predominantly been depletion (d-mode) devices, with a few demonstrations of enhancement (e-mode) operation. While these results are promising, what are the limitations of this technology and what needs to occur for it to play a role alongside the more mature SiC and GaN power device technologies? The low thermal conductivity might be mitigated by transferring devices to another substrate or thinning down the substrate and using a heatsink as well as top-side heat extraction. We give a perspective on the materials’ properties and physics of transport, thermal conduction, doping capabilities, and device design that summarizes the current limitations and future areas of development. A key requirement is continued interest from military electronics development agencies. The history of the power electronics device field has shown that new technologies appear roughly every 10-12 years, with a cycle of performance evolution and optimization. The older technologies, however, survive long into the marketplace, for various reasons. Ga2O3 may supplement SiC and GaN, but is not expected to replace them.
关键词： MOSFETs,β-Ga2O3,rectifiers,power electronics,thermal conductivity,Gallium oxide,Ga2O3,doping,wide bandgap semiconductors,military electronics
更新于2025-09-16 10:30:52